• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.343-344
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• 2012

It has been known since the mid 1960s that Ag can be photodissolved in chalcogenide glasses to form materials with interesting technological properties. In the 40 years since, this effect has been used in diverse applications such as the fabrication of relief images in optical elements, micro photolithographic schemes, and for direct imaging by photoinduced Ag surface deposition. ReRAM, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of a conductive filament in a solid electrolyte. Especially, Ag-doped chalcogenide glasses and thin films have become attractive materials for fundamental research of their structure, properties, and preparation. Ag-doped chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in ReRAM devices. In this paper, we investigated the nature of thin films formed by the photo-dissolution of Ag into Ge-Se glasses for use in ReRAM devices. These devices rely on ion transport in the film so produced to create electrically programmable resistance states. [1-3] We have demonstrated functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of Ag+ ions photo-induced diffusion in thin chalcogenide films is considered. The influence of Ag+ ions is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Saturated Ag+ ions have been used in the formation of conductive filaments at the solid electrolyte which is the active medium in ReRAM devices. Following fabrication, the cell displays a metal-insulator-metal structure. We measured the I-V characteristics of a cell, similar results were obtained with different via sizes, due to the filamentary nature of resistance switching in ReRAM cell. As the voltage is swept from 0 V to a positive top electrode voltage, the device switches from a high resistive to a low resistive, or set. The low conducting, or reset, state can be restored by means of a negative voltage sweep where the switch-off of the device usually occurs.

• 대한기계학회논문집A
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• 제20권1호
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• pp.115-126
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• 1996

In the time optimal control problem, bang-bang control has been used becaese it is the theoretical time minimum solution. However, to improve tracking speed performance in the time optimal control, it is important to select a switching point accurately which makes the velocity zero near the target track. But it is not easy to select the swiching point accurately because of the damping coefficient variation and uncertainties of modeling an actual system. The Adaptive model following control(AMFC) is implemented to relieve the difficulty and inconvenience of this task. The AMFC and make the controlled plant follow as closely as possible to a desired reference model whose switching point can be calculated easily and accurately, assuring the error between the states of the reference model and those of the controlled plant appoaches zero. The hybrid control method composed of AMFC and PID is applied to a tracking actuator of the magneto optical disk drive(MODD) in random access devices to improve its slow tracking performance. According to the simulaion and experimental results, the average tracking time as small as 20ms is obtained for a 3.5 magneto-optical disk drive. The AMFC also can be applied for other random access devices to improve the average tracking performance.

• 전자공학회논문지D
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• 제34D권12호
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• pp.89-100
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• 1997

This paper investigated a new type of low voltage threshold switch (LVTS). As distinguished from the many other types of electronic threshold switches, the LvTS is ; voltage controlled, occurs at low voltages ($V_{2}$ $O_{5}$lV devices. The average low threshold voltage < $V_{LVT}$>=218 mV (standard deviation =24mV~kT/q, where T=300K), and was independent of the device area (x100) and amorphous oxide occurred in an ~22.angs. thick interphase of the V/amorphous- $V_{2}$ $O_{5}$ contacts. At $V_{LVT}$ there was a transition from an initially low conductance (OFF) state into a succession of quantized states of higher conductance (ON). The OFF state was spatically homogeneous and dominated by tunneling into the interphase. The ON state conductances were consistent with the quantized conductances of ballistic transport through a one dimensional, quantum point contact. The temeprature dependence of $V_{LVT}$, and fit of the material parameters (dielectric function, barrier energy, conductivity) to the data, showed that transport in the OFF and ON states occurred in an interphase with the characteristics of, respectively, semiconducting and metallic V $O_{2}$. The experimental results suggest that the LVTS is likely to be observed in interphases produced by a critical event associated with an inelastic transfer of energy.rgy.y.rgy.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.189-189
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• 2009

This work was focused on the dielectrophoretic force of fullerenes dispersed in liquid crystal host medium, which are investigated in the homogeneously aligned liquid crystal (NLC) cells driven by external electric field. A fullerene of 10 wt% was doped into the LC medium and its electric field induced motion was controlled by both in-plane and vertical electric field. When the electric field was applied, the fullerene start to move in direction of applied electric field. The dark, grey and white states in the proposed device can be obtained by suitable combination of the polarity of applied electric field. The w and l are the width and distance between the electrodes. The reflectance at different l was measured and was found to be increased with increasing l. The dynamical motions of fullerene particles in LC medium suggest that fullerene can be designed for electronic-paper like displays.

• Transactions on Electrical and Electronic Materials
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• 제14권3호
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• pp.116-120
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• 2013

This paper proposes a novel RF MEMS dc-contact switch with stiff membrane on a quartz substrate. The uniqueness of this work lies in the utilization of a seesaw mechanism to restore the movable part to its rest position. The switching action is done by using separate pull-down and pull-up electrodes, and hence operation of the switch does not rely on the elastic recovery force of the membrane. One of the main problems faced by electrostatically actuated MEMS switches is the high operational voltages, which results from bending of the membrane, due to internal stress gradient. This is resolved by using a stiff and thick membrane. This membrane consists of flexible meanders, for easy movement between the two states. The device operates with an actuation voltage of 6.43 V, an insertion loss of -0.047 dB and isolation of -51.82 dB at 2 GHz.

• 한국콘텐츠학회:학술대회논문집
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• 한국콘텐츠학회 2007년도 추계 종합학술대회 논문집
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• pp.197-200
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• 2007

동적 전력 관리는 서로 다른 전력소모를 갖는 전력상태들을 시스템 구성 요소에 할당하고 상황별로 전력상태를 관리함으로써 시스템의 전력 소모를 현저하게 줄여줄 수 있다. 전력관리의 주 기능은 구성요소의 상태천이를 언제 수행하느냐 이며 이를 위하여 추계적 프로세스에 기반한 동적 전력관리 모델을 개발한다. 동적 모델은 시스템 큐와 다양한 모델링 기능을 표현할 수 있는 페트리 네트의 확장형인 SRN(Stochastic Reward Nets)을 이용하여 개발되며 성능분석을 함께 수행한다.

• Journal of Power Electronics
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• 제9권3호
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• pp.481-490
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• 2009

This paper describes a SVPWM overmodulation scheme of NPC type three-level inverter for traction drives which extends the modulation index from MI=0.907 to unity. SVPWM strategy is organized by two operation modes of under-modulation and over-modulation. The switching states under the under-modulation modes are determined by dividing them with two linear regions and one hybrid region the same as the conventional three-level inverter. On the other hand, under the over-modulation mode, they are generated by doing it with two over-modulation regions the same as the conventional over-modulation strategy of a two level inverter. Following the description of over-modulation scheme of a three-level inverter, the system description of a vector controlled induction motor for traction drives has been discussed. Finally, the validity of the proposed modulation algorithm has been verified through simulation and experimental results.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 추계학술대회 논문집 학회본부 B
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• pp.643-645
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• 1999

In experiment, a real inverted pendulum system has state constraints and limited amplitude of input. These problems make it difficult to design a swing-up controller. To overcome these problems, we design a sliding mode controller considering physical behaviour of the inverted pendulum system. This sliding mode controller uses a switching control action to converge along a specified path derived from energy equation from a state around the path to desired states(standing position). And optimal control method is used to guarantee stability at unstable equilibrium position. The designed controller can be applied to all inverted pendulum systems regardless of the values of their parameters. Compared with previous existing controllers, it is simple and easy to tune. Experimental results are given to show the effectiveness of this controller.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.911-913
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• 2008

In this work, nonvolatile memory (NVM) devices for system on panel of flat panel display (FPD) were fabricated using low temperature polycrystalline silicon (LTPS) thin film transistor (TFT) technology with an oxide-nitride-oxynitride (ONOn) stack structure on glass. The results demonstrate that the NVM devices fabricated using the ONOn stack structure on glass have suitable switching characteristics for data storage with a low operating voltage, a threshold voltage window of more than 1.8 V between the programming and erasing (P/E) states after 10 years and its initial threshold voltage window (${\Delta}V_{TH}$) after $10^5$ P/E cycles.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.555-558
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• 2003

The bistability in a chiral-splay nematic liquid crystal cell, which is obtained by adding a chiral additive to a splay cell, is proposed. In this paper, we describe a new horizontal way of switching between the two states of the bistable chiral-splay cell, one state being characterized by a non-twisted director field with splay, the second state showing a director-field with $180^{\circ}C$ twist.