• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.8
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• pp.752-758
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• 2004

This paper reports on the DC and RF characteristics of AlGaN/InGaN/GaN high electron-mobility transistors (HEMTs) grown by molecular beau epitaxy(MBE) on sapphire substrates. The devices with a 0.5 ${\mu}$m gate-length exhibited relatively flat transconductance(g$\_$m/), which results from the enhanced carrier confinement of the InGaN channel. The maximum drain current was 880 mA/mm with a peak g$\_$m/ of 156 mS/mm, an f$\_$T/ of 17.3 GHz, and an f$\_$MAX/ or 28.7 GHz. In addition to promising DC and RF results, pulsed I-V and current-switching measurements showed little dispersion in the unpassivated AlGaN/InGaN HEMTs. These results suggest that the addition of In to the GaN channel improves the electron transport characteristics as well as suppressing current collapse that is related to the surface trap states.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04a
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• pp.57-58
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• 2009

The dynamics of nano or micro sized-particles in liquid crystal (LC) medium under an external electric field is of theoretical and technological interest. A fullerene of 10 wt% was doped into the LC medium and its electric field induced motion was controlled by both in-plane and vertical electric fields. In the proposed device, pixel electrode I and pixel electrode II were designed consecutively on the bottom substrate and common electrode on the top of the substrate. When the electric field was applied, the fullerenes start to move in direction of applied electric field. The dark, grey and white states in the proposed device can be obtained by suitable combination of the polarity of applied electric field at pixel electrode I, pixel electrode II and common electrode. The dynamical motions of fullerene particles in LC medium suggest that fullerene can be designed for electronic-paper like displays.

• Journal of KIISE
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• v.42 no.6
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• pp.748-754
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• 2015

This paper proposes a sequential state estimation model consisting of continuous and discrete variables, as a way of generalizing all discrete-state factorial HMM, and gives a design of gait motion model based on the idea. The discrete state variable implements a Markov chain that models the gait dynamics, and for each state of the Markov chain, we created a Gaussian process over the space of the continuous variable. The Markov chain controls the switching among Gaussian processes, each of which models the rotation or various views of a gait state. Then a particle filter-based algorithm is presented to give an approximate filtering solution. Given an input vector sequence presented over time, this finds a trajectory that follows a Gaussian process and occasionally switches to another dynamically. Experimental results show that the proposed model can provide a very intuitive interpretation of video-based gait into a sequence of poses and a sequence of posture states.

• Journal of Information Display
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• v.9 no.4
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• pp.21-29
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• 2008

We studied both the wavelength and intensity dependent photo-responses (photofield-effect) in amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs). During the a-IGZO TFT illumination with the wavelength range from $460\sim660$ nm (visible range), the off-state drain current $(I_{DS_off})$ only slightly increased while a large increase was observed for the wavelength below 400 nm. The observed results are consistent with the optical gap of $\sim$3.05eV extracted from the absorption measurement. The a-IGZO TFT properties under monochromatic illumination ($\lambda$=420nm) with different intensity was also investigated and $I_{DS_off}$ was found to increase with the light intensity. Throughout the study, the field-effect mobility $(\mu_{eff})$ is almost unchanged. But due to photo-generated charge trapping, a negative threshold voltage $(V_{th})$ shift is observed. The mathematical analysis of the photofield-effect suggests that a highly efficient UV photocurrent conversion process in TFT off-region takes place. Finally, a-IGZO mid-gap density-of-states (DOS) was extracted and is more than an order of magnitude lower than reported value for hydrogenated amorphous silicon (a-Si:H), which can explain a good switching properties observed for a-IGZO TFTs.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.42 no.3
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• pp.199-212
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• 2014

This paper describes an autonomous air combat guidance law using a Virtual Pursuit Point (VPP) in one-on-one close engagement for Unmanned Combat Aerial Vehicle (UCAV). The VPPs that consist of virtual lag and lead points are introduced to carry out tactical combat maneuvers. The VPPs are generated based on fighter's aerodynamic performance and Basic Fighter Maneuver (BFM)'s turn circle, total energy and weapon characteristics. The UCAV determines a single VPP and executes pursuit maneuvers based on a smoothing function which evaluates probabilities of the pursuit types for switching maneuvers with given combat states. The proposed law is demonstrated by high-fidelity real-time combat simulation using commercial fighter model and X-Plane simulator.

• The Journal of Korean Institute for Practical Engineering Education
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• v.4 no.1
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• pp.93-98
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• 2012

The ratio of youth unemployment is very high compared to that of total unemployment in Korea. The youth unemployment is especially severe problem because of hindering the accumulation of human capital which is an economic growth driving factor, and switching the youth to economically inactive population rapidly. So Korea government has tried to perform various polices to solve the youth unemployment. In this paper, the states and the characteristics of the company oriented education program among the countermeasure of youth unemployment in Korea, including Job Experience Program of the Youth, Youth Job System, Youth Internship System and Contract Based Department Program are investigated. And the problems of the company oriented education program are analyzed and an improved education program(M-to-M Model) is proposed.

• The Journal of the Acoustical Society of Korea
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• v.15 no.5
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• pp.73-81
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• 1996

In multiprocessor systems with multiple processors and memories, efficient communication between processors and memories is critical for high performance. Various types of multistage networks have been proposed. The economic feasibility and the improvements in both computing throughput and fault tolerance/diagnosis have been some of the most important factors in the development of these computer systems. In this paper, we present an efficient algorithm for the diagnosis of generalized cube interconnection networks with a fan-in/fan-out of 2. Also, using the assumed fault model present total fault diagnosis by generating suitable fault-detection and fault-location test sets for link stuck fault, switching element fault in direct/cross states, including broadcast diagnosis methods based on some basic properties or generalized cube interconnection networks. Finally, we illustrate some example.

• Journal of the Korean Graphic Arts Communication Society
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• v.18 no.2
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• pp.41-54
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• 2000

Photochemical modulation of Bragg-reflection wavelengths based on isomerization of an azobenzene (Azo) and subsequent change in reflectance was investigated in cholesteric liquid crystals (ChLCs) which reflect light in visible wavelength region. Irradiation at 366 nm, which causes an efficient transcis isomerization of Azo, led to change in reflected color of ChLCs toward shorter wavelengths with a concomitant lowering of phase transition. Reversible change in color was induced all-optically by alternate irradiation at effective wavelengths for reversible isomerization of Azo. A considerable variation in reflectance was also observed when the photoinduced change in color was measured by a probe light with the same handedness as the ChLCs. The spectral Position of selective light reflection in the initial states played an important role to produce a normal-mode and a reverse-mode switching in photoinduced modulation of reflectance of the ChLCs with respect to the probe light.

• Journal of KIISE:Information Networking
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• v.29 no.4
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• pp.405-411
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• 2002

Open interfaces in the optica] Internet have been progressed by OIF's ISI, ITU-T ASTN's CCI and IETF's GSMP extensions with optical switching. These open interfaces enable the separation between the control plane and the optical transport plane. This separation allows flexibility in the network, but it suffers more setup delay than the traditional switch-by-switch connection setup. We propose the parallel interworking model, which will reduce the connection setup delay in the open interface of optical Internet. Based on the switch controller's caching capability about networks states, the parallel interworking procedures between signaling protocol and GSMP protocol are performed in the switch controller. We simulated and evaluated our proposed parallel interworking model and the existing sequential interworking model in terms of a connection setup delay and a completion ratio. We observed that the completion ratios of the two interworking models were quite close. However the connection setup delay of parallel interworking model is improved by about 30% compared with that of the sequential interworking model.

• Advances in nano research
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• v.10 no.5
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• pp.415-422
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• 2021

Silicene, a 2D allotrope of silicon, is predicted to be a potential material for future transistor that might be compatible with present silicon fabrication technology. Similar to graphene, silicene exhibits the honeycomb lattice structure. Consequently, silicene is a semimetallic material, preventing its application as a field-effect transistor. Therefore, this work proposes the uniform doping bandgap engineering technique to obtain the n-type silicene nanosheet. By applying nearest neighbour tight-binding approach and parabolic band assumption, the analytical modelling equations for band structure, density of states, electrons and holes concentrations, intrinsic electrons velocity, and ideal ballistic current transport characteristics are computed. All simulations are done by using MATLAB. The results show that a bandgap of 0.66 eV has been induced in uniformly doped silicene with phosphorus (PSi₃NW) in the zigzag direction. Moreover, the relationships between intrinsic velocity to different temperatures and carrier concentration are further studied in this paper. The results show that the ballistic carrier velocity of PSi₃NW is independent on temperature within the degenerate regime. In addition, an ideal room temperature subthreshold swing of 60 mV/dec is extracted from ballistic current-voltage transfer characteristics. In conclusion, the PSi₃NW is a potential nanomaterial for future electronics applications, particularly in the digital switching applications.