• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.384-384
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• 2012

PRAM switching device by using current pulse modulation was investigated to verify its possibility for 3D architecture. In this work, two phase change materials connected in series having a different crystallization temperature are used. Its structural for different phase change material was evaluated by electrical resistance. We confirmed that Germanium-Antimony-Tellurium (GST) alloy and Germanium- Copper-Tellurium (GCT) alloy material were selected according to crystallization temperature, ${\sim}180^{\circ}C$ for switching and ${\sim}240^{\circ}C$ for memory devices, respectively. From this research, it is expected that phase change switching device could have advantages of process in terms of material similarity and structural simplification.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.288-288
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• 2012

In this study, we investigated that the resistance switching characteristics of W-doped NbOx films with increasing W doping concentration. The W-doped NbOx based ReRAM devices with a TiN/W-doped NbOx/Pt/Ti/SiO2 were fabricated on Si substrates. The 50 nm thick W-doped NbOx films were deposited by reactive dc magnetron co-sputtering at $400^{\circ}C$ and oxygen partial pressure of 35%. Micro-structure of W-doped NbOx films and atomic concentration were investigated by XRD, TEM and XPS, respectively. The W-doped NbOx films showed set/reset resistance switching behavior at various W doping concentrations. The process voltage of set/reset is decreased and whereas the initial current level is increased with increasing W doping concentration in NbOx films. The change of resistance switching behavior depending on doping concentration was discussed in terms of concentration of metallic tungsten of oxygen of W-doped NbOx.

• Journal of Power Electronics
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• v.16 no.3
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• pp.915-924
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• 2016

A digital self-sustained phase shift modulation (DSSPSM) strategy that allows for good soft switching and dynamic response performance in the presence of step variations is presented in this paper. The working principle, soft switching characteristics, and voltage gain formulae of a LLC converter with DSSPSM have been provided separately. Furthermore, the method for realizing DSSPSM is proposed. Specifically, some key components of the proposed DSSPSM are carefully investigated, including a parameter variation analysis, the start-up process, and the zero-crossing capture of the resonant current. The simulation and experiment results verify the feasibility of the proposed control method. It is observed that the zero voltage switching of the switches and the zero current switching of the rectifier diodes can be easily realized in presence of step load variations.

• Proceedings of the KIPE Conference
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• 2015.07a
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• pp.179-180
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• 2015

The task of measuring losses becomes more challenging with ever increasing efficiencies and operating frequencies in power electronics applications. Generally, the process of traditional switching loss calculation in flyback converter is very complicated. MOSFET drain-source voltage and current waveforms are needed to calculate switching loss. However, as we know in switched capacitor converter, switching loss can be easily calculated by charge and energy conservation law with known initial and final capacitor voltages. In this paper, the same method is applied to fly-back converter switching loss analysis to simplify calculation procedure.

• Proceedings of the KIEE Conference
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• 2003.04a
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• pp.266-269
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• 2003

A sterilizer equipment by using electrical energy has merits that no process of chemical and no second environmental pollution. Also, the power conversion circuit for sterilizer equipment has merits that are reducing switching loss for soft switching topology by using zero current and zero voltage switching, and miniaturizing size of equipment. Thus, it is expected that the cost of sterilization process, when quality of the device is measured by power consumption, will be reduced. Therefore, the purpose of this research is to solve the sterilization problems of existing powder with plasma sterilization device, to find more economical and effective way, and to suggest more improved sterilizer.

• Journal of IKEEE
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• v.17 no.3
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• pp.365-370
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• 2013

Power MOSFET is developed in power savings, high efficiency, small size, high reliability, fast switching, and low noise. Power MOSFET can be used in high-speed switching transistors devices. Recently attention given to the motor and the application of various technologies. Power MOSFET is a voltage-driven approach switching device and designed to handle on large power, power supplies, converters, motor controllers. In this paper, the 400 V Planar type, and the trench type for realization of low on-resistance are designed. Trench Gate Power MOSFET Vth : 3.25 V BV : 484 V Ron : 0.0395 Ohm has been optimized.

• Journal of the Korean Data and Information Science Society
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• v.24 no.4
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• pp.919-929
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• 2013

We compared two basic methods, combine-accumulate method and accumulate-combine method, using the past quality information in multivariate quality control procedure for monitoring mean vector of multivariate normal process. When small or moderate shifts have occurred, accumulate-combine method yields smaller average run length (ARL) and average time to signal (ATS) than combine-accumulate method. On the other hand, we have found from our numerical results that combine-accumulate method has better performances in terms of switching behavior than accumulate-combine method. In industry, a quality engineer could select one of the two method under the comprehensive consideration about the required time to signal, switching behavior, and other physical factors in the production process.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.597-597
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• 2013

The resistive switching behaviors of Pt nanodisk on Nb-doped SrTiO3 single-crystal have been studied with conductive atomic force microscopy in ultra-high vacuum. The nanometer sizes of Pt disks were formed by using self-assembled patterns of silica nanospheres on Nb-doped SrTiO3 single-crystal semiconductor film using the Langmuir-Blodgett, followed by the metal deposition with e-beam evaporation. The conductance images shows the spatial mapping of the current flowing from the TiN coated AFM probe to Pt nanodisk surface on Nb：STO single-crystal substrate, that was simultaneously obtained with topography. The bipolar resistive switching behaviors of Pt nanodisk on Nb：STO single-crystal junctions was observed. By measuring the current-voltage spectroscopy after the forming process, we found that switching behavior depends on the charging and discharging of interface trap state that exhibit the high resistive state (HRS) and low resistive state (LRS), respectively. The results suggest that the bipolar resistive switching of Pt/Nb:STO single-crystal junctions can be performed without the electrochemical redox reaction between tip and sample with the potential application of nanometer scale resistive switching devices.

• Journal of IKEEE
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• v.19 no.2
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• pp.260-264
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• 2015

In this paper, we propose mode selector for operating a switching system and regulator of linear system to detect the load current. The proposed mode selector can be a mode switching of linear system and switching system, and it has been proposed to compensate for the disadvantages of regulator of switching system with low efficiency in light load conditions. At light load conditions, the mode selector is possible to provide a high efficiency in light load condition by switching the mode to the regulator of linear system. The mode selector was designed to using a Dongbu Hitek $0.18{\mu}m$ CMOS process.

• Journal of Power Electronics
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• v.17 no.6
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• pp.1563-1576
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• 2017

This paper presents a novel switching pattern current control (SP-CC) scheme, which is applied in three-phase voltage-source converters (VSCs). This scheme can select the optimal output switching pattern (SP) by referring the basic principle of space vector modulation (SVM). Moreover, SP-CC is a method without a carrier wave. Thus, the implementation process is concise and easy. When compared with the conventional hysteresis current control (C-HCC) and the space vector-based hysteresis current control (SV-HCC), the SP-CC has the performances of faster dynamic response of C-HCC and less switching number (SN) of SV-HCC. In addition, it has less harmonic contents in the three-phase current, along with a lower switching loss and a higher efficiency. Moreover, the hysteresis bandwidth and Clarke conversion are not required in the SP-CC. The effectiveness of the presented SP-CC is verified by simulation and experimental test results. In addition, the advantages of the SP-CC, when compared with the C-HCC and SV-HCC, are verified as well.