• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 2001년도 하계종합학술대회 논문집(2)
• /
• pp.121-124
• /
• 2001

This paper proposed resource allocation algorithm for the minimum switching activity of functional unit in high level synthesis process as like DSP which is circuit to give many functional unit. The resource allocation method after scheduling use the power function calculating average hamming distance and switching activity of the between two input. First of all, the switching activity is calculated by the input value after calculating the average hamming distance between operation. In this paper, the proposed method though high If level simulation find switching activity in circuit each functional unit exchange for binary sequence length and value bit are logic one value. To use the switching activity find the allocation with minimal power consumption, the proposed method visits all control steps one by one and determines the allocation with minimal power consumption at each control step. As the existing method, the execution time can be fast according to use the number of operator and max control step. And it is the reduction effect from 6% to 8%.

• Journal of Power Electronics
• /
• 제18권6호
• /
• pp.1901-1911
• /
• 2018

This study presents a circuit model for simulating the switching transients of insulated-gate bipolar transistors (IGBTs) with inductive load switching. The modeling approach used in this study considers the behavior of IGBTs and freewheeling diodes during the transient process and ignores the complex semiconductor physics-based relationships and parameters. The proposed circuit model can accurately simulate the switching behavior due to the detailed consideration of device-circuit interactions and the nonlinear nature of model parameters, such as internal capacitances. The developed model is incorporated in an IGBT loss calculation module of an electromagnetic transient simulation program to enable the estimation of switching losses in voltage source converters embedded in large power systems.

• 대한산업공학회지
• /
• 제28권2호
• /
• pp.139-146
• /
• 2002

The third generation mobile communication needs to provide multimedia service with increased data rates. Thus an efficient allocation of radio and network resources is very important. This paper models the 'burst switching' as an efficient radio resource allocation scheme and the performance is compared to the circuit and packet switching. In burst switching, radio resource is allocated to a call for the duration of data bursts rather than an entire session or a single packet as in the case of circuit and packet switching. After a stream of data burst, if a packet does not arrive during timer2 value ($\tau_{2}$), the channel of physical layer is released and the call stays in suspended state. Again if a packet does not arrive for timerl value ($\tau_{1}$) in the suspended state, the upper layer is also released. Thus the two timer values to minimize the sum of access delay and queuing delay need to be determined. In this paper, we focus on the decision of $\tau_{2}$ which minimizes the access and queueing delay with the assumption that traffic arrivals follow Poison process. The simulation, however, is performed with Pareto distribution which well describes the bursty traffic. The computational results show that the delay and the packet loss probability by the burst switching is dramatically reduced compared to the packet switching.

• KSII Transactions on Internet and Information Systems (TIIS)
• /
• 제10권2호
• /
• pp.608-627
• /
• 2016

Wireless mesh networks (WMNs) based on IEEE 802.11s have emerged as one of the prominent technologies in multi-hop communications. However, the deployment of WMNs suffers from serious interference problem which severely limits the system capacity. Using multiple radios for each mesh router over multiple channels, the interference can be reduced and improve system capacity. Nevertheless, interference cannot be completely eliminated due to the limited number of available channels. An effective approach to mitigate interference is to apply dynamic channel switching (DCS) in WMNs. Conventional DCS schemes trigger channel switching if interference is detected or exceeds a predefined threshold which might cause unnecessary channel switching and long protocol overheads. In this paper, a P-learning based dynamic switching algorithm known as learning automaton (LA)-based DCS algorithm is proposed. Initially, an optimal channel for communicating node pairs is determined through the learning process. Then, a novel switching metric is introduced in our LA-based DCS algorithm to avoid unnecessary initialization of channel switching. Hence, the proposed LA-based DCS algorithm enables each pair of communicating mesh nodes to communicate over the least loaded channels and consequently improve network performance.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
• /
• pp.99-99
• /
• 2013

In this talk, I will present two research works in progress, which are: i) mapping of piezoelectric polarization and associated charge density distribution in the heteroepitaxial InGaN/GaN multi-quantum well (MQW) structure of a light emitting diode (LED) by using inline electron holography and ii) in-situ observation of the polarization switching process of an ferroelectric Pb(Zr1-x,Tix)O3 (PZT) thin film capacitor under an applied electric field in transmission electron microscope (TEM). In the first part, I will show that strain as well as total charge density distributions can be mapped quantitatively across all the functional layers constituting a LED, including n-type GaN, InGaN/GaN MQWs, and p-type GaN with sub-nm spatial resolution (~0.8 nm) by using inline electron holography. The experimentally obtained strain maps were verified by comparison with finite element method simulations and confirmed that not only InGaN QWs (2.5 nm in thickness) but also GaN QBs (10 nm in thickness) in the MQW structure are strained complementary to accommodate the lattice misfit strain. Because of this complementary strain of GaN QBs, the strain gradient and also (piezoelectric) polarization gradient across the MQW changes more steeply than expected, resulting in more polarization charge density at the MQW interfaces than the typically expected value from the spontaneous polarization mismatch alone. By quantitative and comparative analysis of the total charge density map with the polarization charge map, we can clarify what extent of the polarization charges are compensated by the electrons supplied from the n-doped GaN QBs. Comparison with the simulated energy band diagrams with various screening parameters show that only 60% of the net polarization charges are compensated by the electrons from the GaN QBs, which results in the internal field of ~2.0 MV cm-1 across each pair of GaN/InGaN of the MQW structure. In the second part of my talk, I will present in-situ observations of the polarization switching process of a planar Ni/PZT/SrRuO3 capacitor using TEM. We observed the preferential, but asymmetric, nucleation and forward growth of switched c-domains at the PZT/electrode interfaces arising from the built-in electric field beneath each interface. The subsequent sideways growth was inhibited by the depolarization field due to the imperfect charge compensation at the counter electrode and preexisting a-domain walls, leading to asymmetric switching. It was found that the preexisting a-domains split into fine a- and c-domains constituting a $90^{\circ}$ stripe domain pattern during the $180^{\circ}$ polarization switching process, revealing that these domains also actively participated in the out-of-plane polarization switching. The real-time observations uncovered the origin of the switching asymmetry and further clarified the importance of charged domain walls and the interfaces with electrodes in the ferroelectric switching processes.

• 한국산학기술학회논문지
• /
• 제16권3호
• /
• pp.1707-1714
• /
• 2015

본 연구는 사건관련 fMRI를 이용하여 언어 내 및 언어 간 그림명명 과제를 수행하는 동안 모국어와 외래어 명사관련 피질 활성화 영역을 비교해 보고, 특히 외래어의 활성화 패턴이 모국어에 동조되는지를 알아보았다. 아울러 과제수행 언어가 정해지지 않은 임의적 언어전환 조건에 관여하는 활성화 영역도 연구대상이었다. 실험결과, 한 가지 수행언어만으로 제한되는 과제에서는 모국어 및 외래어 모두 좌측 하전두회(LIFG) 활성화가 일어났으나 모국어의 활성화 정도가 더 컸으며, 특히 외래어 명명 시 모국어와의 활성화 강도는 약화된 반면 영역분포는 유사한 결과를 얻었다. 이는 외래어가, 외국어가 아닌 모국어에 동조되었음을 시사한다 하겠다. 마지막으로 언어전환 조건에서의 실험에서는 좌측 하전두피질 외에 우측 중전두피 질이 관여함을 발견함으로써 실험수준이 아닌 일상수준의 다언어 사용에 있어, 의식이전의 언어 간 부호전환에 관여하는 우반구의 상대적인 기여와 역할을 시사하는 결과를 얻었다.

• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 1998년도 추계종합학술대회 논문집
• /
• pp.265-268
• /
• 1998

This paper evaluates the VSN(Virtual switch Network) characteristics in the internal call processing of IMT-2000 switching system, which is composed of VSN instead of ATM switch network. In results, internal call establishment delay is increased approximately 5.4msec than the conventional ATM switching system. The evaluated condition is the load 0.8, and the 100km distance between VSNs. It is confirmed that the VSN has the potentiality in the practical implementation.

• 한국전기전자재료학회논문지
• /
• 제29권5호
• /
• pp.268-273
• /
• 2016

In this study, we observed current-voltage characteristics of the MIM (metal-insulator-metal) structure. The $WO_x$ material was used between metal electrodes as the oxide insulator. The structure of the $Al/WO_x/TiN$ shows bipolar resistive switching and the operating direction of the resistive switching is clockwise, which means set at negative voltage and reset at positive voltage. The set process from HRS (high resistance state) to LRS (low resistance state) occurred at -2.6V. The reset process from LRS to HRS occurred at 2.78V. The on/off current ratio was about 10 and resistive switching was performed for 5 cycles in the endurance characteristics. With consecutive switching cycles, the stable $V_{set}$ and $V_{reset}$ were observed. The electrical transport mechanism of the device was based on the migration of oxygen ions and the current-voltage curve is following (Ohm's Law ${\rightarrow}$ Trap-Controlled Space Charge Limited Current ${\rightarrow}$ Ohm's Law) process in the positive voltage region.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
• /
• pp.286-287
• /
• 2012

Reset-first resistive switching mechanism based on reduction reaction in HfO2-x with oxygen drift-diffusion was studied. we first report that the indirect evidence of local filamentary conductive path formation in bulk HfO2 film with local TiOx region at Ti top electrode formed during forming process and presence of anion-migration at interface between electrode and HfO2 during resistive switching through high resolution transmission electron microscopy (HRTEM), electron disperse x-ray (EDX), and electron energy loss spectroscopy (EELS) mapping. Based on forming process mechanism, we expected that redox reaction from Ti/HfO2 to TiOx/HfO2-x was responsible for an increase of initial current with increasing the post-annealing process. First-reset resistive switching in above $350^{\circ}C$ annealed Ti/HfO2 film was exhibited and the redox phenomenon from Ti/HfO2 to TiOx/HfO2-x was observed with high angle annular dark field (HAADF) - scanning transmission electron microscopy (STEM), EDX and x-ray photoelectron spectroscopy. Therefore, we demonstrated that the migration of oxygen ions at interface region under external electrical bias contributed to bipolar resistive switching behavior.

• 전력전자학회:학술대회논문집
• /
• 전력전자학회 1998년도 연구회 합동 학술발표회 논문집
• /
• pp.60-63
• /
• 1998

The widely used power supply (Switched Mode Power Supply : SMPS) as a source in order to stabilize direct current for electronics or communication systems has merits, when it is compared to the existing source for stability, such as high efficiency, small size, light weight by means of switching process of the semiconductor device which controls the flow of power. However, due to existence of inductors and capacitors used for charging energy, the source part in electronic or communication systems hasn't reached the speed, that is supposed to get, for achieving smaller size and lighter weight. In order to get smallness in size, it is necessary to increase switching frequency. And that makes devices for measuring energy smaller. Nevertheless, the rise switching frequency brings increases in switching loss, inductor loss, and power loss. Also, the occurrence of surge and noise caused by high frequency switching is getting higher. The resonant converter has been considered as one of methods that give solutions for the problems of SMPS and that method have been paid attention as a source technology in electronics and communication.