• Journal of the Semiconductor & Display Technology
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• v.19 no.4
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• pp.99-104
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• 2020

In this paper, efficiency and loss characteristics of GaN FET were reported by applying it into the QR flyback converter. In particular, for the comparison of efficiency characteristics, QR flyback converter experimental circuits with Si FET and with GaN FET were separately produced in 12W class. As a result of the experiment, the experimental circuit of the QR flyback converter using GaN FET reached a high efficiency of 90% or more when the load power was 2W or more, and the maximum efficiency was observed to be about 92%, and the maximum loss power was about 1.1W. Meanwhile, the efficiency of the experimental circuit with Si FET increased as the input voltage increased, and the maximum efficiency was observed to be about 82% when the load power was 9W or higher, and the maximum loss power was about 2.8W. From the results, it is estimated that that in the case of the experimental circuit applying the GaN FET switch, the power conversion efficiency was improved as the switching loss and conduction loss due to on-resistance were reduced, and the internal loss due to the synchronous rectifier was minimized. Consequently, it is concluded that the GaN FET is suitable for under 20W class power supply unit as a high efficiency power switch.

• Journal of Korean Institute of Industrial Engineers
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• v.28 no.2
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• pp.139-146
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• 2002

The third generation mobile communication needs to provide multimedia service with increased data rates. Thus an efficient allocation of radio and network resources is very important. This paper models the 'burst switching' as an efficient radio resource allocation scheme and the performance is compared to the circuit and packet switching. In burst switching, radio resource is allocated to a call for the duration of data bursts rather than an entire session or a single packet as in the case of circuit and packet switching. After a stream of data burst, if a packet does not arrive during timer2 value ($\tau_{2}$), the channel of physical layer is released and the call stays in suspended state. Again if a packet does not arrive for timerl value ($\tau_{1}$) in the suspended state, the upper layer is also released. Thus the two timer values to minimize the sum of access delay and queuing delay need to be determined. In this paper, we focus on the decision of $\tau_{2}$ which minimizes the access and queueing delay with the assumption that traffic arrivals follow Poison process. The simulation, however, is performed with Pareto distribution which well describes the bursty traffic. The computational results show that the delay and the packet loss probability by the burst switching is dramatically reduced compared to the packet switching.

• Proceedings of the KIEE Conference
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• 1996.11a
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• pp.339-342
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• 1996

Driving the electrodeless fluorescent lamp, the high ac voltage with high frequency is required. The linear power amplifier has been widely used as a driving circuit of electrodeless fluorescent lamp. However, the low efficiency of the power amplifier causes the driving circuit to be replaced by a PWM switching inverter. In order to use a PWM switching inverter as the driving circuit of an electrodeless fluorescent lamp, the high switching frequency is required. But due to the switching loss at switches of the inverter, the limitation of high switching frequency appears in the inverter. One solution to this limitation is to reduce the switching loss by using the zero voltage switching technique. In this paper, zero voltage switching resonant inverter for driving an electrodeless fluorescent lamp is discussed. The results of analysis about the inverter are presented and the equations for design are established. And the validity of the analyzed results are verified through the experiment.

• The Transactions of the Korean Institute of Power Electronics
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• v.24 no.6
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• pp.396-405
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• 2019

Single-phase full-bridge inverters have shoot-through problems. Dead time is an essential way of solving these issues, but it distorts the output voltage and current. Dual-buck inverters are designed to eliminate the abovementioned problems. However, these inverters result in switching power loss and electromagnetic interference due to the diode reverse-recovery problem. Previous studies have suggested reducing the switching power loss from diode reverse-recovery, but their proposed methods have complex circuit configurations and high system costs. To alleviate the switching power loss from diode reverse-recovery, the current work proposes a dual-buck inverter with a coupled inductor. In the structure of the proposed inverter, the current flowing into the original diode is divided into a new diode. Therefore, the switching power loss is reduced, and the efficiency of the proposed inverter is improved. Simulation waveforms and experimental results for a 1.0 kW prototype inverter are discussed to verify the performance of the proposed inverter.

• The Transactions of the Korean Institute of Power Electronics
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• v.20 no.1
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• pp.65-71
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• 2015

This paper presents the efficiency analysis of a critical current mode interleaved PFC rectifier, in which each of three different semiconductor switches is employed as the active switch. The Si FET, SiC FET, and GaN FET are consecutively used with the prototype PFC rectifier, and the efficiency of the PFC rectifier with each different semiconductor switch is analyzed. An equivalent circuit model of the PFC rectifier, which incorporates all the internal losses of the PFC rectifier, is developed. The rms values of the current waveforms main circuit components are calculated. By adapting the rms current waveforms to the equivalent model, all the losses are broken down and individually analyzed to assess the conduction loss, switching loss, and magnetic loss in the PFC rectifier. This study revealed that the GaN FET offers the highest overall efficiency with the least loss among the three switching devices. The GaN FET yields 96% efficiency at 90 V input and 97.6% efficiency at 240 V, under full load condition. This paper also confirmed that the efficiency of the three switching devices largely depends on the turn-on resistance and parasitic capacitance of the respective switching devices.

• Journal of Power Electronics
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• v.2 no.2
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• pp.77-87
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• 2002

The purpose of this paper is to improve power conversion efficiency of three-phase soft-switching voltage-source inverter with an auxiliary resonant dc link (ARDCL) snubber circuit. Firstly, the operation principle of ARDCL snubber circuit is described. Secondly, this paper proposes an effictive generation method of zero voltage vector for three-phase voltage-source soft-switching inverter in power losses in which power losses in the ARDCL snubber circuit can be reduced. In particular, zero voltage holding interval in the inverter DC busline can be controlled due to the new generation scheme of zero voltage vector. Thirdly, a simulator for power loss analysis for power loss characteristics based on actual system, is developed. the validity of developed. The validity of developed simulator of proved with experimental results. Finally, power efficency of three-phase inverter is estimated according to high carrier frequency by using the simulatior.

• Journal of Electrical Engineering and Technology
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• v.11 no.3
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• pp.592-601
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• 2016

This paper presents the modeling of insulated-gate bipolar transistor (IGBT) in electromagnetic transients program (EMTP) simulation for the reliable calculation of switching and conduction losses. The conventional approach considering the physical property of switching devices requires many attribute parameters and large computation efforts. In contrast, the proposed method uses the curve fitting and interpolation techniques based on typical switching waveforms and a user-defined component with variable resistances to capture the dynamic characteristics of IGBTs. Therefore, the simulation time can be efficiently reduced without losing the accuracy while avoiding the extremely small time step, which is required in simulation by the conventional method. The EMTP based simulation includes turn-on and turn-off transients of IGBT, saturation state, forward voltage of free-wheeling diode, and reverse recovery characteristics, etc. The effectiveness of proposed modeling for the EMTP simulation is verified by the comparison with experimental results obtained from practical implementation in hardware.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 1997.10a
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• pp.88-92
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• 1997

Power conversion system must be increased swiching frequency in order to achieve a small size, a light weight and a low noise, However, the swiches of converter are subjected to high switching power losses and switching stresses. As a result of those, the power system brings on a low efficiency. In this paper, the authors propose a DC-DC boost converter of high power by partial resonant switch method (PRSM). The switching devices in a proposed circuit are operated with soft swiching and the control technique of those is simplified for switch to drive in constant duty cycle. The partial resonant circuit makes use of a inductor suing step up and a condenser of loss-less snubber. Also the circuit has a merit which is taken to increase of efficiency, as if makes to a regeneration at input source of accumulated energy in snubber condenser without loss of snubber in conventional cirvuit. The result is the the switching loss is very low and the efficiency of system is high. The proposed converter is deemed the most suitable for high power applications where the power switching devices are used.

• Proceedings of the KIEE Conference
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• 1998.11a
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• pp.125-127
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• 1998

The widely used power supply (Switched Mode Power Supply : SMPS) as a source in order to stabilize direct current for electronics or communication systems has merits, when it is compared to the existing source for stability, such as high efficiency, small size, light weight by means of switching process of the semiconductor device which controls the flow of power. However, due to existence of inductors and capacitors used for charging energy, the source part in electronic or communication systems hasn't reached the speed, that is supposed to get, for achieving smaller size and lighter weight. In order to got smallness in size, it is necessary to increase switching frequency. And that makes devices for measuring energy smaller. Nevertheless, the rise switching frequency brings increases in switching loss, inductor loss, and power loss. Also, the occurrence of surge and noise caused by high frequency switching is setting higher. The resonant converter has been considered as one of methods that give solutions for the problems of SMPS and that method has been paid attention as a source technology in electronics and communication.

• Journal of IKEEE
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• v.25 no.1
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• pp.15-24
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• 2021

In this paper, 1700 V EPDT (Extended P+ shielding floating gate Double Trench) MOSFET structure, which has a smaller switching time and loss than CDT (Conventional Double Trench) MOSFET, is proposed. The proposed EPDT MOSFET structure extended the P+ shielding area of the source trench in the CDT MOSFET structure and divided the gate into N+ and floating P- polysilicon gate. By comparing the two structures through Sentaurus TCAD simulation, the on-resistance was almost unchanged, but Crss (Gate-Drain Capacitance) decreased by 32.54 % and 65.5 %, when 0 V and 7 V was applied to the gate respectively. Therefore, the switching time and loss were reduced by 45 %, 32.6 % respectively, which shows that switching performance was greatly improved.