• 제어로봇시스템학회:학술대회논문집
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• 2001.10a
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• pp.152.2-152
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• 2001

This paper investigates the effect of the conducted EMI Electromagnetic Interference and the switching loss which occurs from the switching devices in the switching period of the unipolar and limited unipolar switching circuits. The three main sources of conducted EMI and switching loss in the unipolar and limited unipolar switching circuit come from the switching devices, the number of switching times in the switching period and their switching waveform. In this paper, these three parameters are used to determine the conducted EMI which generated from the unipolar and limited unipolar switching circuits and to improve the limited unipolar switching circuit which uses the power MOSFET´s as the switching devices. The significant reduction of Ire conducted EMI ...

• Journal of Power Electronics
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• v.17 no.3
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• pp.601-609
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• 2017

Gallium nitride (GaN) power switching devices are promising candidates for high switching frequency and high efficiency power conversion due to their fast switching, low on-state resistance, and high-temperature operation capability. In order to facilitate the use of these new devices better, it is required to investigate the device characteristics and performance in detail preferably by comparing with various conventional silicon (Si) devices. This paper presents a comprehensive study of GaN high electron mobility transistor (HEMT) based non-isolated point-of-load (POL) synchronous buck converter operating at 2.7 MHz with a high step-down ratio (24 V to 3.3 V). The characteristics and performance of GaN HEMT and three different Si devices are analytically investigated and the optimal operating point for GaN HEMT is discussed. Zero-voltage switching (ZVS) is implemented to minimize switching loss in high switching frequency operation. The prototype circuit and experimental data support the validity of analytical and simulation results.

• The Transactions of the Korean Institute of Electrical Engineers B
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• v.54 no.9
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• pp.431-436
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• 2005

This paper studies a novel boost DC-DC converter operated high efficiency for discontinuous current mode (DCM) control. The converter worked in DCM eliminates the complicated circuit control requirement, reduces a number of components, and reduces the used reactive components size. In the general DCM converter, the switching devices are turned-on the zero current switching (ZCS), and the switching devices must be switched-off at a maximum reactor current. To achieve the zero voltage switching (ZVS) at the switching turn-off, the proposed converter is constructed by using a new loss-less snubber circuit. Soft-switched operation of the proposed boost converter is verified by digital simulation and experimental results. A new boost converter achieves the soft-switching for all switching devices without increasing their voltage and current stresses. The result is that the switching loss is very low and the efficiency of boost DC-DC converter is high.

• Applied Microscopy
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• v.46 no.4
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• pp.206-216
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• 2016

This communication is to elucidate the state-of-the-art of techniques necessary to gather information on a new class of nanoelectronic devices known as memristors and related resistive switching devices, respectively. Unlike classical microelectronic devices such as transistors, the chemical and structural variations occurring upon switching of memristive devices require cutting-edge electron microscopy techniques. Depending on the switching mechanism, some memristors call for the acquisition of atomically resolved structural data, while others rely on atomistic chemical phenomena requiring the application of advanced X-ray and electron spectroscopy to correlate the real structure with properties. Additionally, understanding resistive switching phenomena also necessitates the application not only of pre- and post-operation analysis, but also during the process of switching. This highly challenging in situ characterization also requires the aforementioned techniques while simultaneously applying an electrical bias. Through this review we aim to give an overview of the possibilities and challenges as well as an outlook onto future developments in the field of nanoscopic characterization of memristive devices.

• Journal of Power Electronics
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• v.10 no.4
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• pp.335-341
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• 2010

In this paper, an interleaved soft switching boost converter for a Photovoltaic Power Conditioning System (PV-PCS) with high efficiency is proposed. In order to raise the efficiency of the proposed converter, a 2-phase interleaved boost converter integrated with soft switching cells is used. All of the switching devices in the proposed converter achieve zero current switching (ZCS) or zero voltage switching (ZVS). Thus, the proposed circuit has a high efficiency characteristic due to low switching losses. To analyze the power losses of the proposed converter, two experimental sets have been built. One consists of normal devices (MOSFETs, Fast Recovery (FR) diodes) and the other consists of advanced power devices (CoolMOSs, SiC-Schottky Barrier Diodes (SBDs)). To verify the validity of the proposed topology, theoretical analysis and experimental results are presented.

• The Transactions of the Korean Institute of Electrical Engineers A
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• v.55 no.1
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• pp.13-17
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• 2006

In this paper, the RCF(Resistive Companion Form) analysis method which is used to analyze small signal stability problems of non-continuous systems including switching devices. The RCF analysis method is mathematically rigorous and computes eigenvalue of the system periodic transition matrix based on discrete system analysis method. As an effect of switching operations, the eigenvalues of the systems are changed and newly unstable oscillation modes may be occurred. As an illustrating example, the oscillation modes of the system with different switching time intervals are computed exactly by the RCF analysis method and the results show that ON/OFF time intervals of switching equipments are important factors to make the system stable or unstable. This result shows that the RCF analysis method is very powerful to analyze small signal stability problems of power systems including switching devices such as FACTS equipments.

• Journal of Power Electronics
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• v.18 no.4
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• pp.985-996
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• 2018

The implementation and performance evaluation of an interleaved boundary conduction mode (BCM) boost power factor correction (PFC) converter is presented in this paper by employing three wide band-gap switching devices: a super junction silicon (Si) MOSFET, a silicon carbide (SiC) MOSFET and a gallium nitride (GaN) high electron mobility transistor (HEMT). The practical considerations for adopting wide band-gap switching devices to BCM boost PFC converters are also addressed. These considerations include the gate drive circuit design and the PCB layout technique for the reliable and efficient operation of a GaN HEMT. In this paper it will be shown that the GaN HEMT exhibits the superior switching characteristics and pronounces its merits at high-frequency operations. The efficiency improvement with the GaN HEMT and its application potentials for high power density/low profile BCM boost PFC converters are demonstrated.

• Journal of Surface Science and Engineering
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• v.53 no.6
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• pp.330-342
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• 2020

Since the original report on ferroelectricity in Si-doped HfO2 in 2011, fluorite-structured ferroelectrics have attracted increasing interest due to their scalability, established deposition techniques including atomic layer deposition, and compatibility with the complementary-metal-oxide-semiconductor technology. Especially, the emerging fluorite-structured ferroelectrics are considered promising for the next-generation semiconductor devices such as storage class memories, memory-logic hybrid devices, and neuromorphic computing devices. For achieving the practical semiconductor devices, understanding polarization switching kinetics in fluorite-structured ferroelectrics is an urgent task. To understand the polarization switching kinetics and domain dynamics in this emerging ferroelectric materials, various classical models such as Kolmogorov-Avrami-Ishibashi model, nucleation limited switching model, inhomogeneous field mechanism model, and Du-Chen model have been applied to the fluorite-structured ferroelectrics. However, the polarization switching kinetics of fluorite-structured ferroelectrics are reported to be strongly affected by various nonideal factors such as nanoscale polymorphism, strong effect of defects such as oxygen vacancies and residual impurities, and polycrystallinity with a weak texture. Moreover, some important parameters for polarization switching kinetics and domain dynamics including activation field, domain wall velocity, and switching time distribution have been reported quantitatively different from conventional ferroelectrics such as perovskite-structured ferroelectrics. In this focused review, therefore, the polarization switching kinetics of fluorite-structured ferroelectrics are comprehensively reviewed based on the available literature.

• Journal of Power Electronics
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• v.19 no.1
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• pp.68-78
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• 2019

The emergence of high voltage conversion applications has resulted in a trend of using semiconductor device series associations. Series associations allow for operation at blocking voltages, which are higher than the nominal voltage for each of the semiconductor devices. The main challenge with these topologies is finding a way to guarantee the voltage balance between devices in both blocking and switching transients. Most of the methods that have been proposed to mitigate static and dynamic voltage unbalances result in increased losses within the device. This paper introduces a new series stack topology, where the voltage unbalances are reduced. This in turn, mitigates the switching losses. The proposed topology consists of a circuit that ensures the soft switching of each device, and one auxiliary circuit that allows for switching energy recovery. The principle for the topology operation is presented and experimental tests are performed for two modules. The topology performs excellently for switching transients on each of the devices. The voltage static unbalances were limited to 10%, while the activation/deactivation delay introduced by the lower module IGBT driver takes place in the dynamic unbalances. Thus, the switching losses are reduced by 40%, when compared to hard switching configurations.

• Proceedings of the KIEE Conference
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• 1999.07a
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• pp.415-417
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• 1999

Recently, Reliability of switching devices for transmission & substation system is very important. Therefore, We have investigated fault trend of switching devices from 1982 to 1998 This paper presents fault analysis on Circuit Breakers, Disconnecting Switch, Gas Insulated Switchgear, etc. Thus, this paper will help improve design, manufacture, construction technology and maintenance method.