• 제목/요약/키워드: Switching device

검색결과 1,023건 처리시간 0.03초

단상풀브릿지 인버터효율향상을 위한 소프트 스위칭 기법 비교에 관한 연구 (The study on comparison of soft-switching techniques for the improvement of efficiency in single phase-full bridge inverter)

  • 임성훈;이성룡;한병성
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2000년도 하계학술대회 논문집 B
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    • pp.1215-1217
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    • 2000
  • For the application of soft-switching technique to single Phase-full bridge inverter. in this paper ZCT(Zero Current Transition) and ZVT(Zero Voltage Transition) techniques proposed previously are compared and discussed the merit and demerit of both. Both have a excellency that can reduce the number of auxiliary switch and resonant circuit compared to other techniques and achive soft-switching in auxiliary switch itself. Therefore, it has enabled us to have benifits of realizing high efficiency and reliability, low EMI for high switching frequency and reducing the cost as well as size of device.

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3상 소프트 스위칭 인버터의 전력손실에 관한 해석 (Analysis on power loss of three-phase soft switching inverter)

  • 김주용;문상필;김은수;서기영;김영문
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2002년도 학술대회 논문집 전문대학교육위원
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    • pp.3-5
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    • 2002
  • This paper proposes a new prototype auxiliary resonant DC link(ARDCL)snubber circuit and deals with its power loss on the basis of actually measured conduction loss characteristic of switching device module. Voltage-type soft switching three phase inverter using proposed ARDCL snubber circuit is presented along with its performance evaluations. And, the power loss analysis of three phase hard and soft switching inverter are carried out from the point of simulation and experimental results.

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상온에서 RF 스퍼터링 방법으로 증착한 Hafnium Oxide 박막의 저항 변화 특성 (Resistive Switching Characteristics of Hafnium Oxide Thin Films Sputtered at Room Temperature)

  • 한용;조경아;윤정권;김상식
    • 한국전기전자재료학회논문지
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    • 제24권9호
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    • pp.710-712
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    • 2011
  • In this study, we fabricate resistive switching random access memory (ReRAM) devices constructed with a Al/$HfO_2$/ITO structure on glass substrates and investigate their memory characteristics. The hafnium oxide thin film used as a resistive switching layer is sputtered at room temperature in a sputtering system with a cooling unit. The Al/$HfO_2$/ITO device exhibits bipolar resistive switching characteristics, and the ratio of the high resistance (HRS) to low resistance states (LRS) is more than 60. In addition, the resistance ratio maintains even after $10^4$ seconds.

스트레이 인덕턴스 저감(低減)을 위한 인버터 평판 부스의 형상 최적 설계 (The Optimal Design of Inverter Planar Bus Structure for Reducing the Stray inductance)

  • 노지준;설승기
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1994년도 추계학술대회 논문집 학회본부
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    • pp.178-180
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    • 1994
  • In recent days, the inverter is widely used at the industrial applications. In the range lower than 100[kW], IGBT(Insulated Gate Bipolar Transistor) is most widely used as the switching device. In that case of IGBT, the rising time and the filling time are very short(about $200[ns]{\sim}300[ns]$). Especially for motor control applications, the switching frequency is required to be increased for better dynamic performance of the drive. However, the higher switching frequency leads to the unexpected problem occurs such as voltage spike due to stray inductance in the bus at switching instant. In this paper, a new methodology for reducing the stray inductance existing in the bus that induces the voltage spike will be presented.

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교류전력 불평형 보상장치용 모델예측기반 전류제어 연구 (A Study on a Current Control Based on Model Prediction for AC Electric Railway Inbalance Compensation Device)

  • 이정현;조종민;신창훈;이태훈;차한주
    • 전력전자학회논문지
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    • 제25권6호
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    • pp.490-495
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    • 2020
  • The power loss of large-capacity systems using single-phase inverters has attracted considerable attention. In this study, optimal switching sequence model prediction control at a low switching frequency is proposed to reduce the power loss in a high-power inverter system, and a compensation method that can be utilized for model prediction control is developed to reduce errors in accordance with sampling values. When a three-level, single-phase inverter using a switching frequency of 600 Hz and a sampling frequency of 12 kHz is adopted, the power factor is improved from 0.95 to 0.99 through 3 kW active power control. The performance of the controller is also verified.

Advanced atomic force microscopy-based techniques for nanoscale characterization of switching devices for emerging neuromorphic applications

  • Young-Min Kim;Jihye Lee;Deok-Jin Jeon;Si-Eun Oh;Jong-Souk Yeo
    • Applied Microscopy
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    • 제51권
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    • pp.7.1-7.9
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    • 2021
  • Neuromorphic systems require integrated structures with high-density memory and selector devices to avoid interference and recognition errors between neighboring memory cells. To improve the performance of a selector device, it is important to understand the characteristics of the switching process. As changes by switching cycle occur at local nanoscale areas, a high-resolution analysis method is needed to investigate this phenomenon. Atomic force microscopy (AFM) is used to analyze the local changes because it offers nanoscale detection with high-resolution capabilities. This review introduces various types of AFM such as conductive AFM (C-AFM), electrostatic force microscopy (EFM), and Kelvin probe force microscopy (KPFM) to study switching behaviors.

고성능 Smart Power 소자 설계 및 전기적 특성에 관한 연구 (A Study on the Design and Electrical Characteristics of High Performance Smart Power Device)

  • 구용서
    • 전기전자학회논문지
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    • 제7권1호
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    • pp.1-8
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    • 2003
  • 본 논문에서는 고내압 및 고속 스위칭 특성을 갖는 고성능 BCD(Bipolar- CMOS-DMOS) 소자 구조를 고안하였다. 공정 및 소자 시뮬레이션을 통하여, 최적화된 공정 규격과 소자 규격을 설계하였으며, 고안된 소자의 전기적 특성을 만족시키기 위하여 이중 매몰층 구조, 트랜치 격리 공정, n-/p- 드리프트 영역 형성기술 및 얕은 접합 깊이 형성기술 등을 채택하였다. 이 스마트 파워 IC는 20V급 Bipolar npn/pnp 소자, 60V급 LDMOS소자, 수 암페어급의 VDMOS, 20V급 CMOS소자 그리고 5V급 논리 CMOS를 내장하고 있다.

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Viewing Angle Switching using Hybrid Aligned Nematic Liquid Crystal Display Driven by a Fringe-Field

  • Chin, Mi-Hyung;Jeong, Eun;Lim, Young-Jin;Kim, Jin-Ho;Srivastava, Anoop Kumar;Lee, Seung-Hee
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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    • pp.1386-1389
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    • 2008
  • Conventional viewing angle switching electrode requires pixel division and additional liquid crystal panel. Hence the conventional viewing angle switching has low aperture ratio and high thickness. In this paper we proposed new viewing angle switching using hybrid aligned nematic mode by fringe-field electrode field (named HAN-FFS) with single liquid crystal panel. The fringe-field switching electrode is located at the bottom, and the additional common electrode is located at the top of the cell to control viewing angle. The proposed device is free from additional liquid crystal panel and pixel division. Consequently, the suggested structure has not only high aperture ratio but also show an excellent potential for viewing angle switching.

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PPS 제어기법을 적용한 48V-400V 비절연 양방향 DC-DC컨버터 (A 48V-400V Non-isolated Bidirectional Soft-switching DC-DC Converter for Residential ESS)

  • 정현주;권민호;최세완
    • 전력전자학회논문지
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    • 제23권3호
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    • pp.190-198
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    • 2018
  • This paper proposes a nonisolated, bidirectional, soft-switching DC - DC converter with PWM plus phase shift (PPS) control. The proposed converter has an input-parallel/output-series configuration and can achieve the interleaving effect and high voltage gains, resulting in decreased voltage ratings in all related devices. The proposed converter can operate under zero-voltage switching (ZVS) conditions for all switches in continuous conduction mode. The power flow of the proposed converter can be controlled by changing the phase shift angle, and the duty is controlled to balance the voltage of four high voltage side capacitors. The PPS control device of the proposed converter is simple in structure and presents symmetrical switching patterns under a bidirectional power flow. The PPS control also ensures ZVS during charging and discharging at all loads and equalizes the voltage ratings of the output capacitors and switches. To verify the validity of the proposed converter, an experimental investigation of a 2 kW prototype is performed in both charging and discharging modes under different load conditions and a bidirectional power flow.