• 한국자동차공학회논문집
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• 제16권1호
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• pp.71-77
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• 2008

This paper proposes an Electronic Throttle Body (ETB) model considering a non-linearity of DC motor driver which is integrated with a H-bridge and a gate driver. A propagation delay and reverse recovery time of switching components cause non-linear characteristic of DC motor driver. This non-linearity affects not only the amateur voltage of DC motor, but also entire behaviour and parameters of ETB. In order to analyze the behavior of ETB more accurately, this non-linear effect of DC motor driver is modeled. The developed ETB model is validated by use of the step response and ramp response experiments, and it shows relatively accurate results compared with linear DC motor driver model.

• 한국세라믹학회지
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• 제44권8호
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• pp.403-406
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• 2007

Ferroelectric Ce-doped $Bi_4Ti_3O_{12}$ (BCT) thin films were deposited by liquid delivery metal organic chemical vapor deposition (MOCVD) onto a $Pt(111)/Ti/SiO_2/Si(100)$ substrate. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to identify the crystal structure, the surface, and the cross-section morphology of the deposited ferroelectric flims. After annealing above $640^{\circ}C$, the BCT films exhibited a polycrystalline structure with preferred (001) and (117) orientations. The BCT lam capacitor with a top Pt electrode showed a large remnant polarization ($2P_r$) of $44.56{\mu}C/cm^2$ at an applied voltage of 5 V and exhibited fatigue-free behavior up to $1.0{\times}10^{11}$ switching cycles at a frequency of 1 MHz. This study clearly reveals that BCT thin film has potential for application in non-volatile ferroelectric random access memories and dynamic random access memories.

• Journal of Communications and Networks
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• 제7권3호
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• pp.243-247
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• 2005

We propose an efficient block least-mean-square (BLMS) adaptive algorithm, in conjunction with error control coding, for direct-sequence code division multiple access (DS-CDMA) systems. The proposed adaptive receiver incorporates decision feedback detection and channel encoding in order to improve the performance of the standard LMS algorithm in convolutionally coded systems. The BLMS algorithm involves two modes of operation: (i) The training mode where an uncoded training sequence is used for initial filter tap-weights adaptation, and (ii) the decision-directed where the filter weights are adapted, using the BLMS algorithm, after decoding/encoding operation. It is shown that the proposed adaptive receiver structure is able to compensate for the signal-to­noise ratio (SNR) loss incurred due to the switching from uncoded training mode to coded decision-directed mode. Our results show that by using the proposed adaptive receiver (with decision feed­back block adaptation) one can achieve a much better performance than both the coded LMS with no decision feedback employed. The convergence behavior of the proposed BLMS receiver is simulated and compared to the standard LMS with and without channel coding. We also examine the steady-state bit-error rate (BER) performance of the proposed adaptive BLMS and standard LMS, both with convolutional coding, where we show that the former is more superior than the latter especially at large SNRs ($SNR\;\geq\;9\;dB$).

• 대한전자공학회논문지TC
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• 제37권9호
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• pp.24-29
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• 2000

데이터, 음성, 영상등에 대한 다양한 종류의 서비스들이 요구되어지면서 ATM기술은 중요한 역할을 하게 될 것이다. 그러나 기존의 AAL Type들로는 저속의 짧은 가변길이를 Packet을 사용하는 서비스를 지원하기는 문제점이 있었다. 이러한 문제의 해결을 위해 AAL Type 2는 저속이면서 짧고 가변의 길이를 가지는 패킷들을 사용하며 지연에는 민감한 특성을 가지는 응용들을 지원하기 위해 만들어 졌다. 본 논문에서는 AAL Type 2의 서비스를 지원하는데 있어 ATM 망에서 AAL Type 2 ATM Cell들을 Switching하기 위한 AAL 2 Switch의 구조를 제안하고 CAD 설계하였다. 제안한 AAL2 Switch는 Module화를 통하여 확장성을 가지도록 설계하였다. 또한 Computer Simulation을 통하여 성능 분석하였다.

• 한국초전도ㆍ저온공학회논문지
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• 제15권4호
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• pp.30-33
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• 2013

The studies of superconducting fault current limiter (SFCL) for reduction of the fault current are actively underway in the worldwide. In this paper, we analyzed the characteristics of a new type SFCL using the conventional transformer and superconducting elements combined mutually. The secondary and third windings of this SFCL were connected the load and the superconducting element, respectively. The electric power was provided to load connected to secondary windings of the transformer in normal state of power system. On the other hand, when the fault occurred in power system, the fault current was limited by closing the line of third winding of the transformer. At this time, the ripple phenomenon of the fault was minimized by opening the fault line in secondary winding of a transformer in power system. The sensing of the fault state was performed by the CT(current transformer) and then turn-on and turn-off switching behavior of the SFCL was performed by the SCR(silicon-controlled rectifier). As a result, the proposed SFCL limited the fault current within a half-cycle efficiently. We confirmed that the fault current limitation rate was changed according to the winding ratio of a transformer.

• 전기학회논문지
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• 제61권11호
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• pp.1743-1747
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• 2012

The research of superconducting fault current limiter (SFCL) for reduction of the fault current is actively underway in the worldwide. In this paper, we analyzed the characteristics of a SFCL using the transformer and superconducting elements combined mutually in accordance with the fault types. The structure of this SFCL was composed of the secondary and third windings of a transformer connected to the load and the superconducting element, respectively. The provided electric power flew into the load connected to the secondary winding of the transformer in normal state. On the other hand, when the fault occurred in power system, the fault current was limited by closing the line of third winding of the transformer. At this time, the effect of the fault was minimized by opening the fault line in secondary winding of a transformer in power system. The sensing of the fault state was performed by the current transformer(CT) and then turn-on and turn-off switching behavior of the secondary line in the transformer was performed by the silicon-controlled rectifier(SCR). As a result, the proposed SFCL limited the fault current within one-cycle efficiently. Also, the degradation of the superconducting element in the normal state was avoided.

• Journal of Electrical Engineering and Technology
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• 제11권3호
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• pp.662-669
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• 2016

In this work, nonlinear control of a three-phase shunt active power filter (SAPF) has been studied and compared to classical control based on proportional integral regulator. The control strategy is based on the direct current method using sliding mode control (SMC), where the aim is to regulate the average voltage across the dc bus of the inverter. Details are given for the control algorithm; the controller is comprised of a current loop which utilizes a hysteresis controller to generate the gating signals for the switching devices, and a nonlinear controller based on SMC law which is different from classical laws based on error between reference and measured output voltage of the inverter. Sliding surface applied in this work contains the whole of state variables, in order to ensure full control of the system behavior in the presence of disturbances that affect the supply source, the load parameters or the reference value. The designed controller offers advantage that it can gives the improvement of dynamic and static performances in cases of large disturbances. A comparison of the effects of PI control and SMC on the APF response in steady stat, under line variations, load variations, and different component variations is performed.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.229.2-229.2
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• 2014

Graphene, an allotrope of carbon, is a two-dimensional material having a unique electro-mechanical property that shows significant change of the electrical conductance under the applied strain. In addition of the extraordinary mechanical strength [1], graphene becomes a prospective candidate for pressure sensor technology [2]. However, very few investigations have been carried out to demonstrate characteristics of graphene sensor as a device form. In this study, we demonstrate a pressure sensor using graphene double layer as an active channel to generate electrical signal as the response of the applied vertical pressure. For formation of the active channel in the pressure sensor, two single graphene layers which are grown on Cu foil (25 um thickness) by the plasma enhanced chemical vapor deposition (PECVD) are sequentially transformed to the poly-di-methyl-siloxane (PDMS) substrate. Dry and wet transfer methods are individually employed for formation of the double layer graphene. This sensor geometry results a switching characteristic which shows ~900% conductivity change in response to the application of pulsed pressure of 5 kPa whose on and off duration is 3 sec. Additionally, the functional reliability of the sensor confirms consistent behavior with a 200-cycle test.

• 한국염색가공학회지
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• 제22권3호
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• pp.181-186
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• 2010

A thermoresponsive poly(NIPAM-co-dye) labeled with benzopyran-based D-$\pi$-A type dye was prepared by typical radical copolymerization. It can be also constructed a acid/base-induced molecular switch by modulation of intramolecular charge transfer with protonation/deprotonation. The lower critical solution temperature behavior was investigated by means of UV-vis spectroscopy which allows the measurement of the phase transition from $25^{\circ}C$ to $45^{\circ}C$ in aqueous DMSO solution. The morphology of the internal microstructure of the poly(NIPAM-co-dye) hydrogel was observed by scanning electron microscopy. The reversible switch could be obtained by thermal and acid/base stimuli.

• Applied Microscopy
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• 제42권4호
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• pp.207-211
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• 2012

We examined the electrical properties and microstructure of NiO produced using a sol-gel method and Ni nitrate hexahydrate ($Ni[NO_3]_2{\cdot}6H_2O$) to investigate if this NiO thin film can be used as an insulator layer for resistance random access memory (ReRAM) devices. It was found that as-prepared NiO film was polycrystalline and presented as the nonstoichiometric compound $Ni_{1+x}O$ with Ni interstitials (oxygen vacancies). Resistances-witching behavior was observed in the range of 0~2 V, and the low-resistance state and high-resistance state were clearly distinguishable (${\sim}10^3$ orders). It was also demonstrated that NiO could be patterned directly by KrF eximer laser irradiation using a shadow mask. NiO thin film fabricated by the sol-gel method does not require any photoresist or vacuum processes, and therefore has potential for application as an insulating layer in low-cost ReRAM devices.