• Title/Summary/Keyword: Switched-Capacitor Circuit

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Three-phase Three-level Boost-type Front-end PFC Rectifier for Improving Power Quality at Input AC Mains of Telecom Loads

  • Saravana, Prakash P.;Kalpana, R.;Singh, Bhim
    • Journal of Power Electronics
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    • v.18 no.6
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    • pp.1819-1829
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    • 2018
  • A three-phase, three-switch, and three-level boost-type PWM rectifier (Vienna rectifier) is proposed as an active front-end power factor correction (PFC) rectifier for telecom loads. The proposed active front-end PFC rectifier system is modeled by the switching cycle average model. The relation between duty ratios and DC link capacitor voltages is derived in terms of the system input currents. Furthermore, the feasible switching states are identified and applied to the proposed system to reduce the switching stress and DC ripples. A detailed equivalent circuit analysis of the proposed front-end PFC rectifier is conducted, and its performance is verified through simulations in MATLAB. Simulation results are verified using an experimental setup of an active front-end PFC rectifier that was developed in the laboratory. Simulation and experimental results demonstrate the improved power quality parameters that are in accordance with the IEEE and IEC standards.

CMOS ROIC for MEMS Acceleration Sensor (MEMS 가속도센서를 위한 CMOS Readout 회로)

  • Yoon, Eun-Jung;Park, Jong-Tae;Yu, Chong-Gun
    • Journal of IKEEE
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    • v.18 no.1
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    • pp.119-127
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    • 2014
  • This paper presents a CMOS readout circuit for MEMS(Micro Electro Mechanical System) acceleration sensors. It consists of a MEMS accelerometer, a capacitance to voltage converter(CVC) and a second-order switched-capacitor ${\Sigma}{\Delta}$ modulator. Correlated-double-sampling(CDS) and chopper-stabilization(CHS) techniques are used in the CVC and ${\Sigma}{\Delta}$ modulator to reduce the low-frequency noise and DC offset. The sensitivity of the designed CVC is 150mV/g and its non-linearity is 0.15%. The duty cycle of the designed ${\Sigma}{\Delta}$ modulator output increases about 10% when the input voltage amplitude increases by 100mV, and the modulator's non-linearity is 0.45%. The total sensitivity is 150mV/g and the power consumption is 5.6mW. The proposed circuit is designed in a 0.35um CMOS process with a supply voltage of 3.3V and a operating frequency of 2MHz. The size of the designed chip including PADs is $0.96mm{\times}0.85mm$.

The Incremental Delta-Sigma ADC for A Single-Electrode Capacitive Touch Sensor (단일-극 커패시터 방식의 터치센서를 위한 Incremental 델타-시그마 아날로그-디지털 변환기 설계)

  • Jung, Young-Jae;Roh, Jeong-Jin
    • Journal of IKEEE
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    • v.17 no.3
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    • pp.234-240
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    • 2013
  • This paper presents an incremental delta-sigma analog-to-digital converter (ADC) for a single-electrode capacitive touch sensor. The second-order cascade of integrators with distributed feedback (CIFB) delta-sigma modulator with 1-bit quantization was fabricated by a $0.18-{\mu}m$ CMOS process. In order to achieve a wide input range in this incremental delta-sigma analog-to-digital converter, the shielding signal and the digitally controlled offset capacitors are used in front of a converter. This circuit operated at a supply voltage of 2.6 V to 3.7 V, and is suitable for single-electrode capacitive touch sensor for ${\pm}10-pF$ input range with sub-fF resolution.

A Low Area and High Efficiency SMPS with a PWM Generator Based on a Pseudo Relaxation-Oscillating Technique (Pseudo Relaxation-Oscillating 기법의 PWM 발생기를 이용한 저면적, 고효율 SMPS)

  • Lim, Ji-Hoon;Wee, Jae-Kyung;Song, Inchae
    • Journal of the Institute of Electronics and Information Engineers
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    • v.50 no.11
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    • pp.70-77
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    • 2013
  • We suggest a low area and high efficiency switched-mode power supply (SMPS) with a pulse width modulation (PWM) generator based on a pseudo relaxation-oscillating technique. In the proposed circuit, the PWM duty ratio is determined by the voltage slope control of an internal capacitor according to amount of charging current in a PWM generator. Compared to conventional SMPSs, the proposed control method consists of a simple structure without the filter circuits needed for an analog-controlled SMPS or the digital compensator used by a digitally-controlled SMPS. The proposed circuit is able to operate at switching frequency of 1MHz~10MHz, as this frequency can be controlled from the selection of one of the internal capacitors in a PWM generator. The maximum current of the core circuit is 2.7 mA, and the total current of the entire circuit including output buffer driver is 15 mA at 10 MHz switching frequency. The proposed SMPS has a simulated maximum ripple voltage of 7mV. In this paper, to verify the operation of the proposed circuit, we performed simulation using Dongbu Hitek BCD $0.35{\mu}m$ technology and measured the proposed circuit.

A3V 10b 33 MHz Low Power CMOS A/D Converter for HDTV Applications (HDTV 응용을 위한 3V 10b 33MHz 저전력 CMOS A/D 변환기)

  • Lee, Kang-Jin;Lee, Seung-Hoon
    • Journal of IKEEE
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    • v.2 no.2 s.3
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    • pp.278-284
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    • 1998
  • This paper describes a l0b CMOS A/D converter (ADC) for HDTV applications. The proposed ADC adopts a typical multi-step pipelined architecture. The proposed circuit design techniques are as fo1lows: A selective channel-length adjustment technique for a bias circuit minimizes the mismatch of the bias current due to the short channel effect by supply voltage variations. A power reduction technique for a high-speed two-stage operational amplifier decreases the power consumption of amplifiers with wide bandwidths by turning on and off bias currents in the suggested sequence. A typical capacitor scaling technique optimizes the chip area and power dissipation of the ADC. The proposed ADC is designed and fabricated in s 0.8 um double-poly double-metal n-well CMOS technology. The measured differential and integral nonlinearities of the prototype ADC show less than ${\pm}0.6LSB\;and\;{\pm}2.0LSB$, respectively. The typical ADC power consumption is 119 mW at 3 V with a 40 MHz sampling rate, and 320 mW at 5 V with a 50 MHz sampling rate.

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Single-Phase Self-Excited Induction Generator with Static VAR Compensator Voltage Regulation for Simple and Low Cost Stand-Alone Renewable Energy Utilizations Part II : Simulation and Experimental Results

  • Ahmed, Tarek;Noro, Osamu;Soshin, Koji;Sato, Shinji;Hiraki, Eiji;Nakaoka, Mutsuo
    • KIEE International Transactions on Power Engineering
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    • v.3A no.1
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    • pp.27-34
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    • 2003
  • In this paper, the power conditioner composed of the stand-alone single-phase squirrel cage rotor type self-excited induction generator (SEIG) driven by prime movers such as a wind turbine and a micro gas turbine (MGT) is presented by using the steady-state circuit analysis based on the two nodal admittance approaches using the per-unit frequency in addition to a new state variable defined by the per-unit slip frequency along with its performance evaluations for the stand-alone energy utilizations. The stande-alone single-phase SEIG operating performances in unregulated voltage control loop are then evaluated on line under the conditions of the speed change transients of the prime mover and the stand-alone electrical passive load power variations with the simple theoretical analysis and the efficient computation processing procedures described in the part I of this paper. In addition, a feasuible PI controlled feedback closed-loop voltage regulation scheme of the stande-alone single-phase SEIG is designed on the basis of the static VAR compensate. (SVC) and discussed in experiment for the promising stand-alone power conditioner. The experimental operating performance results are illustrated and give good agreements with the simulation ones. The simulation and experimental results of the stand-alone single-phase SEIG with the simple SVC controller for its stabilized voltage regulation prove the practical effectiveness of the additional SVC control loop scheme including the PI controller with fast response characteristics and steady-sate performance improvements.

Design of a Multi-Band Low Noise Amplifier for 3GPP LTE Applications in 90nm CMOS (3GPP LTE를 위한 다중대역 90nm CMOS 저잡음 증폭기의 설계)

  • Lee, Seong-Ku;Shin, Hyun-Chol
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.47 no.5
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    • pp.100-105
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    • 2010
  • A multi-band low noise amplifier (LNA) is designed in 90 nm RF CMOS process for 3GPP LTE (3rd Generation Partner Project Long Term Evolution) applications. The designed multi-band LNA covers the eight frequency bands between 1.85 and 2.8 GHz. A tunable input matching circuit is realized by adopting a switched capacitor array at the LNA input stage for providing optimum performances across the wide operating band. Current steering technique is adopted for the gain control in three steps. The performances of the LNA are verified through post-layout simulations (PLS). The LNA consumes 17 mA at 1.2 V supply voltage. It shows a power gain of 26 at the normal gain mode, and provides much lower gains of 0 and -6.7 in the bypass-I and -II modes, respectively. It achieves a noise figure of 1.78 dB and a IIP3 of -12.8 dBm over the entire band.

A Reconfigurable Spatial Moving Average Filter in Sampler-Based Discrete-Time Receiver (샘플러 기반의 수신기를 위한 재구성 가능한 이산시간 공간상 이동평균 필터)

  • Cho, Yong-Ho;Shin, Soo-Hwan;Kweon, Soon-Jae;Yoo, Hyung-Joun
    • Journal of the Institute of Electronics and Information Engineers
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    • v.49 no.10
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    • pp.169-177
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    • 2012
  • A non-decimation second-order spatial moving average (SMA) discrete-time (DT) filter is proposed with reconfigurable null frequencies. The filter coefficients are changeable, and it can be controlled by switching sampling capacitors. So, interferers can be rejected effectively by flexible nulls. Since it operates without decimation, it does not change the sample rate and aliasing problem can be avoided. The filter is designed with variable weight of coefficients as $1:{\alpha}:1$ where ${\alpha}$ varies from 1 to 2. This corresponds to the change of null frequencies within the range of fs/3~fs/2 and fs/2~2fs/3. The proposed filter is implemented in the TSMC 0.18-${\mu}m$ CMOS process. Simulation shows that null frequencies are changeable in the range of 0.38~0.49fs and 0.51~0.62fs.

Design of a 5.2GHz/2.4GHz Dual band CMOS Frequency Synthesizer for WLAN (WLAN을 위한 5.2GHz/2.4GHz 이중대역 주차수 합성기의 설계)

  • Kim, Kwang-Il;Lee, Sang-Cheol;Yoon, Kwang-Sub;Kim, Seok-Jin
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.32 no.1A
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    • pp.134-141
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    • 2007
  • This paper presents a frequency synthesizer(FS) for 5.2GHz/2.4GHz dual band wireless applications which is designed in a standard $0.18{\mu}m$ CMOS1P6M process. The 2.4GHz frequency is obtained from the 5.2GHz output frequency of Voltage Controlled Oscillator (VCO) by using the Switched Capacitor (SC) and the divider-by-2. Power dissipations of the proposed FS and VCO are 25mW and 3.6mW, respectively. The tuning range of VCO is 700MHz and the locking time is $4{\mu}s$. The simulated phase noise of PLL is -101.36dBc/Hz at 200kHz offset frequency from 5.0GHz with SCA circuit on.

A Single-Bit 2nd-Order Delta-Sigma Modulator with 10-㎛ Column-Pitch for a Low Noise CMOS Image Sensor (저잡음 CMOS 이미지 센서를 위한 10㎛ 컬럼 폭을 가지는 단일 비트 2차 델타 시그마 모듈레이터)

  • Kwon, Min-Woo;Cheon, Jimin
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.13 no.1
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    • pp.8-16
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    • 2020
  • In this paper, a single-bit 2nd-order delta-sigma modulator with the architecture of cascaded-of-integrator feedforward (CIFF) is proposed for column-parallel analog-to-digital converter (ADC) array used in a low noise CMOS image sensor. The proposed modulator implements two switched capacitor integrators and a single-bit comparator within only 10-㎛ column-pitch for column-parallel ADC array. Also, peripheral circuits for driving all column modulators include a non-overlapping clock generator and a bias circuit. The proposed delta-sigma modulator has been implemented in a 110-nm CMOS process. It achieves 88.1-dB signal-to-noise-and-distortion ratio (SNDR), 88.6-dB spurious-free dynamic range (SFDR), and 14.3-bit effective-number-of-bits (ENOB) with an oversampling ratio (OSR) of 418 for 12-kHz bandwidth. The area and power consumption of the delta-sigma modulator are 970×10 ㎛2 and 248 ㎼, respectively.