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검색결과 536건 처리시간 0.025초

ABR 서비스를 위한 예측 트래픽 제어모델 (Predictive Traffic Control Scheme of ABR Service)

  • 오창윤;임동주;배상현
    • 한국정보통신학회논문지
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    • 제4권2호
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    • pp.307-312
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    • 2000
  • ATM은 비동기 시분할 다중화와 통계적 다중화 특성을 기존의 데이터 통신분야에 도입함으로써 데이터와 음성, 영상과 같은 멀티미디어 등의 다양한 통신들을 유연하게 서비스할 수 있다. ATM 서비스는 트래픽 특성과 요구되는 서비스 품질에 따라 CBR, VBR, UBR, ABR로 구분하는데 그 중 ABR 서비스는 최소의 대역폭을 보장하고 가용 대역폭을 최대 셀 전송률까지 높여 트래픽을 전송할 수 있으며, 셀 손실을 줄이기 위해 피드백 정보를 활용하여 트래픽을 제어한다. 본 논문에서는 피드백 정보를 위한 예측제어 알고리즘을 제시한다. ATM 스위치에서 발생한 피드백 정보가 역 방향 노드에 도착하기 위해 긴 지연시간을 갖는 경우에, ATM 스위치에서 큐 길이의 증가로 인한 혼잡상황이 발생할 수 있으며 또한 큐 길이의 시간 대비 변화량이 크게 된다. 이 논문에서 제시한 예측제어 알고리즘들은 예시적인 피드백 제어방식으로 시간 대비 큐 길이함수의 기울기와 이전의 큐 변화량을 이용하여 미래의 큐 길이를 예측하려 하였으며, 시뮬레이션 결과 본 논문에서 제시한 제어 알고리즘은 효과적임이 증명되었다.

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A New Photovoltaic System Architecture of Module-Integrated Converter with a Single-sourced Asymmetric Multilevel Inverter Using a Cost-effective Single-ended Pre-regulator

  • Manoharan, Mohana Sundar;Ahmed, Ashraf;Park, Joung-Hu
    • Journal of Power Electronics
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    • 제17권1호
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    • pp.222-231
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    • 2017
  • In this paper, a new architecture for a cost-effective power conditioning systems (PCS) using a single-sourced asymmetric cascaded H-bridge multilevel inverter (MLI) for photovoltaic (PV) applications is proposed. The asymmetric MLI topology has a reduced number of parts compared to the symmetrical type for the same number of voltage level. However, the modulation index threshold related to the drop in the number of levels of the inverter output is higher than that of the symmetrical MLI. This problem results in a modulation index limitation which is relatively higher than that of the symmetrical MLI. Hence, an extra voltage pre-regulator becomes a necessary component in the PCS under a wide operating bias variation. In addition to pre-stage voltage regulation for the constant MLI dc-links, another auxiliary pre-regulator should provide isolation and voltage balance among the multiple H-bridge cells in the asymmetrical MLI as well as the symmetrical ones. The proposed PCS uses a single-ended DC-DC converter topology with a coupled inductor and charge-pump circuit to satisfy all of the aforementioned requirements. Since the proposed integrated-type voltage pre-regulator circuit uses only a single MOSFET switch and a single magnetic component, the size and cost of the PCS is an optimal trade-off. In addition, the voltage balance between the separate H-bridge cells is automatically maintained by the number of turns in the coupled inductor transformer regardless of the duty cycle, which eliminates the need for an extra voltage regulator for the auxiliary H-bridge in MLIs. The voltage balance is also maintained under the discontinuous conduction mode (DCM). Thus, the PCS is also operational during light load conditions. The proposed architecture can apply the module-integrated converter (MIC) concept to perform distributed MPPT. The proposed architecture is analyzed and verified for a 7-level asymmetric MLI, using simulation results and a hardware implementation.

원자현미경을 이용한 탄화규소 (SiC)의 국소산화 (Local Oxidation of 4H-SiC using an Atomic Force Microscopy)

  • 조영득;방욱;김상철;김남균;구상모
    • 한국전기전자재료학회논문지
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    • 제22권8호
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    • pp.632-636
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    • 2009
  • The local oxidation using an atomic force microscopy (AFM) is useful for Si-based fabrication of nanoscale structures and devices. SiC is a wide band-gap material that has advantages such as high-power, high-temperature and high-frequency in applications, and among several SiC polytypes, 4H-SiC is the most attractive polytype due to the high electron mobility. However, the AFM local oxidation of 4H-SiC for fabrication is still difficult, mainly due to the physical hardness and chemical inactivity of SiC. In this paper, we investigated the local oxidation of 4H-SiC surface using an AFM. We fabricated oxide patterns using a contact mode AFM with a Pt/Ir-coated Si tip (N-type, 0.01-0.025 ${\Omega}cm$) at room temperature, and the relative humidity ranged from 40 to 50 %. The height of the fabricated oxide pattern (1-3 nm) on SiC is similar to that of typically obtained on Si ($10^{15}^{\sim}10^{17}$ $cm^{-3}$). We perform the 2-D simulation to further analyze the electric field between the tip and the surface. We demonstrated that a specific electric field (4 ${\times}$ $10^7\;V/m$) and a doping concentration ($^{\sim}10^{17}$ $cm^{-3}$) is sufficient to switch on/off the growth of the local oxide on SiC.

Strategy for Insecticide Resistance Management Approach to IPM

  • Motoyama, Naoki;Dauterman, W.C.
    • 한국응용곤충학회지
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    • 제31권3호
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    • pp.314-327
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    • 1992
  • Insecticide resistance is a serious is a serious threat to IPM, resulting in various adverse effects not to mention the loss of yield in agriculture. One approach to counter the problem is the disruption of resistance mechanisms. This can be achieved by (1) compounds which show a negative correlation with resistance at the site of action, (2) specific metabolic inhibitors which serve as synergists, or (3) a certain combination of two insecticides producing a joint action. This approach, however, requires certain precautions for the side effects may cause an increase in toxicity to mammals. Owing to the recent advances in theoretical studies on resistance management employing computer simulation and mathematical models, a few principles to reduce the risk of development of resistance have been clarified. They are helpful in designing operational strategies with regard to, for instance, insecticide doses to be applied, mode of application, and choice and nature of the insecticide(s) to be used. For restoration of insecticide susceptibility of a resistant population, reintroduction of susceptible individuals to the resistant population is feasible when certain conditions are met. Natural enemies which developed resistance to insecticides can be an important component of IPM as has been shown in the pest management in apple orchards. After all, the implementation of a successful resistance management program depends upon cooperation between different sigments of the agricutural community. Although resistance is a preadaptive phenomenon, in some cases spontaneous loss of resistance does occur without contamination by susceptible individuals. The instability of resistance in these insects implies the possible existence of a switch machanism controlling the expression of resistance gene(s). Elucidation of such a mechanism may eventually provide us with a new technical approach with which we can combat the problem of insecticide resistance.

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Glyceraldehyde-3-Phosphate, a Glycolytic Intermediate, Plays a Key Role in Controlling Cell Fate Via Inhibition of Caspase Activity

  • Jang, Mi;Kang, Hyo Jin;Lee, Sun Young;Chung, Sang J.;Kang, Sunghyun;Chi, Seung Wook;Cho, Sayeon;Lee, Sang Chul;Lee, Chong-Kil;Park, Byoung Chul;Bae, Kwang-Hee;Park, Sung Goo
    • Molecules and Cells
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    • 제28권6호
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    • pp.559-563
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    • 2009
  • Glyceraldehyde-3-phosphate is a key intermediate in several central metabolic pathways of all organisms. Aldolase and glyceraldehyde-3-phosphate dehydrogenase are involved in the production or elimination of glyceraldehyde-3-phosphate during glycolysis or gluconeogenesis, and are differentially expressed under various physiological conditions, including cancer, hypoxia, and apoptosis. In this study, we examine the effects of glyceraldehyde-3-phosphate on cell survival and apoptosis. Overexpression of aldolase protected cells against apoptosis, and addition of glyceraldehyde-3-phosphate to cells delayed apoptosis. Additionally, delayed apoptotic phenomena were observed when glyceraldehyde-3-phosphate was added to a cell-free system, in which artificial apoptotic process was induced by adding dATP and cytochrome c. Surprisingly, glyceraldehyde-3-phosphate directly suppressed caspase-3 activity in a reversible noncompetitive mode, preventing caspase-dependent proteolysis. Based on these results, we suggest that glyceraldehyde-3-phosphate, a key molecule in several central metabolic pathways, functions as a molecule switch between cell survival and apoptosis.

Influence of corrosive phenomena on bearing capacity of RC and PC beams

  • Malerba, Pier Giorgio;Sgambi, Luca;Ielmini, Diego;Gotti, Giordano
    • Advances in concrete construction
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    • 제5권2호
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    • pp.117-143
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    • 2017
  • The attack of environmental aggressive agents progressively reduces the structural reliability of buildings and infrastructures and, in the worst exposition conditions, may even lead to their collapse in the long period. A change in the material and sectional characteristics of a structural element, due to the environmental damaging effects, changes its mechanical behaviour and varies both the internal stress redistribution and the kinematics through which it reaches its ultimate state. To identify such a behaviour, the evolution of both the damaging process and its mechanical consequences have to be taken into account. This paper presents a computational approach for the analysis of reinforced and prestressed concrete elements under sustained loading conditions and subjected to given damaging scenarios. The effects of the diffusion of aggressive agents, of the onset and development of the corrosion state in the reinforcement and the corresponding mechanical response are studied. As known, the corrosion on the reinforcing bars influences the damaging rate in the cracking pattern evolution; hence, the damage development and the mechanical behaviours are considered as coupled phenomena. The reliability of such an approach is validated in modelling the diffusion of the aggressive agents and the changes in the mechanical response of simple structural elements whose experimental behaviour is reported in Literature. A second set of analyses studies the effects of the corrosion of the tendons of a P.C. beam and explores potentially unexpected structural responses caused by corrosion under different aggressive exposition. The role of the different types and of the different positions of the damaging agents is discussed. In particular, it is shown how the collapse mode of the beam may switch from flexural to shear type, in case corrosion is caused by a localized chloride attack in the shear span.

보조회로를 이용한 영전압 스위칭 플라이백 컨버터 (ZVS Flyback Converter Using a Auxiliary Circuit)

  • 김태웅;강창수
    • 대한전자공학회논문지TE
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    • 제37권5호
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    • pp.11-116
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    • 2000
  • 본 논문에서는 영전압 스위칭에 의해 스위칭 손실과 전압 스트레스로 줄이는 토폴로지를 제안하였다. 일반적으로 스위칭 모드 변환시에는 과도한 전압과 전류가 기생 성분에 의해서 발생하는데 이것은 전압 스트레스와 전력 손실을 발생시켜 전원 장치의 성능에 영향을 미치어 전체 효율이 감소한다. 실제로 플라이백 컨버터에서 스위치의 천이 첨두 전압과 전류는 기생성분에 의해서 발생한다. 이러한 문제를 보완하기 위하여 보조회로를 이용한 영전압 스위칭 플라이백 컨버터를 제안한다. 기존의 플라이백 토폴로지에 보조 회로를 추가하여 전력 손실을 감소시키고 스위칭 전압 스트레스를 최소로 하였다. 보조 회로 내에 스너버 캐패시터는 주 스위치의 온·오프시 제어 전압 변화시간에 의해 영전압 스위칭을 가능하게 하여 전압 스트레스 및 전력 손실을 감소시킨다. 본 논문에서는 회로의 세부적인 분석을 하고 동작과정을 설명하였고 500W, 100㎑ 대의 보조회로를 사용한 영전압 스위칭 플라이백 컨버터를 설계하여 기존의 하드 스위칭 플라이백 컨버터와의 효율을 비교하였다.

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인터리브드 RPWM Buck 컨버터의 전도성 노이즈 감소에 대한 연구 (Reduction of Conducted Emission in Interleaved RPWM Buck Converter)

  • 이승현;이근봉;나완수
    • 한국전자파학회논문지
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    • 제28권4호
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    • pp.298-308
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    • 2017
  • 본 논문에서는 DC-DC Converter에서의 고조파로 인한 전자기적 잡음을 줄이기 위해 Random PWM을 적용한 Interleaved Buck Converter(IBC) 시스템을 제안한다. PWM 직류전원장치에서 스위칭 방식을 사용하는 경우 스위칭 손실 및 EMI 문제가 발생하기 때문에 많은 고조파를 포함하고 있어 선간 전압의 왜곡 등을 유발한다. 따라서 이에 대한 해결방법으로 PRBS를 이용한 IBC를 최초로 제안한다. 이 방식의 회로 구조는 2개의 능동형 스위치를 가지며 180도의 위상차를 갖는 2개의 PWM 신호를 이용하여 회로를 제어한다. IBC는 1세트의 스위치를 추가하기 때문에, 비용 측면 등에서는 불리 할 수 있으나 전력분배, 출력전류 리플 감소, 빠른 회로 반응속도, 수동소자크기 감소의 이점을 가진다. 본연구의 타당성을 확인하기 위하여 PSIM 시뮬레이터를 이용하였고 Random PWM을 적용한 IBC 회로를 설계하여 기존의 PWM과 RPWM 방식만을 사용하는 Buck-converter 회로를 PSIM 시뮬레이터를 이용하여 결과를 확인하고 분석하였다.

Atomic Force Microscopy을 이용한 4H-SiC의 Local Oxidation (Local oxidation of 4H-SiC using an atomic force microscopy)

  • 조영득;방욱;김상철;김남균;구상모
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 춘계학술대회 논문집
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    • pp.79-80
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    • 2009
  • The local oxidation using an atomic force microscopy (AFM) is useful for Si-base fabrication of nanoscale structures and devices. SiC is a wide band-gap material that has advantages such as high-power, high-temperature and high-frequency in applications, and among several SiC poly types, 4H-SiC is the most attractive poly type due to the high electron mobility. However, the AFM local oxidation of 4H-SiC for fabrication is still difficult, mainly due to the physical hardness and chemical inactivity of SiC. In this paper, we investigated the local oxidation of 4H-SiC surface using an AFM. We fabricated oxide patterns using a contact mode AFM with a Pt/Ir-coated Si tip (N-type, $0.01{\sim}0.025\;{\Omega}cm$) at room temperature, and the relative humidity ranged from 40 to 50%. The height of the fabricated oxide pattern ($1{\sim}3\;nm$) on SiC is similar to that of typically obtained on Si ($10^{15}{\sim}10^{17}\;cm^{-3}$). We perform the 2-D simulation to further analyze the electric field between the tip and the surface. Whereas the simulated electric field on Si surface is constant ($5\;{\times}\;10^7\;V/m$), the electric field on SiC surface increases with increasing the doping concentration from ${\sim}10^{15}$ to ${\sim}10^{17}\;cm^{-3}$. We demonstrated that a specific electric field ($4\;{\times}\;10^7\;V/m$) and a doping concentration (${\sim}10^{17}\;cm^{-3}$) is sufficient to switch on/off the growth of the local oxide on SiC.

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피부질환 치료를 위한 Q-Switched Nd:YAG의 SHG 변환기술 (Q-Switched Nd YAG's SHG conversion techniques for a skin diseased treatment)

  • 김휘영
    • 한국정보통신학회논문지
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    • 제13권6호
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    • pp.1141-1149
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    • 2009
  • Pulse 펄스형 Nd:YAG 레이저는 피부재생치료에 적합하고, 램프에 의해서 연속발진은 물론 정상발진, Q-스위치 및 모드동기 발진까지 다양한 발전 형태가 가능하며 미세수술 및 피부재생 촉진에 널리 사용되어지고 있다. 치료목적에 따라 에너지 밀도를 제어하는 것이 매우 중요하다. 에너지 밀도의 제어는 레이저 출력의 펄스반복률을 제어하는 방법이 주로 사용된다. 본 연구에서는 펄스형 Nd:YAG 레이저의 펄스반복률을 제어할 수 있는 제 2고조파 발생(second harmonic generation: SHG)로 각주파수인 광파의 에너지 일부가 비선형 결정안을 전파하면서 각주파수인 광파의 에너지로 변환되는 현상을 적용하여 2차 비선형성에 의한 제2고조파 발생을 통해 피부심부까지 치료 가능하다는 것은 간단히 관찰할 수 있었다.