• Transactions on Electrical and Electronic Materials
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• v.18 no.1
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• pp.16-20
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• 2017

A RF-MEMS (radio-frequency microelectromechanical-system) based DPDT (double pole double throw) switch for the Ku band has been designed and analyzed for this article. The switch topology is based on the FG-CPW (finite ground-coplanar waveguide) configuration of a microstrip-transmission line. An FEM-based multiphysics solver is used for the evaluation of the spring constant, stress distribution, and pull-in voltage regarding the requirements of the switch-beam unit. The electromagnetic performance of the switch is investigated for a $675{\mu}m$ thick silicon substrate. For the operational frequency of 14.5 GHz, an insertion loss better than -0.3 dB, a return loss better than -40 dB, and input/output- and output-port isolations better than -35 dB are achieved for the switching unit.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.3
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• pp.132-138
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• 2005

In this paper a DPDT(Double-Pole Double Through) switch with defected ground structure(DGS) is proposed. The equivalent circuit for the proposed switch structure is derived according to based on equivalent circuit of proposed DGS unit structure. The equivalent circuit parameters of DGS unit are extracted by using the circuit analysis method. The on/off operation of the proposed switch is obtained by varying the capacitance of the varactor diode at the defected ground plane. In the case of ON state, the insertion loss of the fabricated DPDT was shown under 1dB. And in OFF state, we found the rejection characteristic over 20dB at the designed frequency 2.45GHz. The experimental results show excellent insertion loss at on state and isolation at off state.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.29 no.5
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• pp.57-64
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• 2015

This paper proposes a new switching algorithm for an controllable clamp snubber to improve the efficiency of a fly-back converter system. This system uses an controllable clamp method for the snubber circuit for the efficiency and reliability of the system. However, the active clamp snubber circuit has the disadvantage that system efficiency is decreased by switch operating time because of heat loss in resonance between the snubber capacitor and leakage inductance. To address this, this paper proposes a new switching algorithm. The proposed algorithm is a technique to reduce power consumption by reducing the resonance of the snubber switch operation time. Also, the snubber switch is operated at zero voltage switching by turning on the snubber switch before main switch turn-off. Experimental results are presented to show the validity of the proposed controllable clamp control algorithm.

• Journal of the Semiconductor & Display Technology
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• v.19 no.4
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• pp.99-104
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• 2020

In this paper, efficiency and loss characteristics of GaN FET were reported by applying it into the QR flyback converter. In particular, for the comparison of efficiency characteristics, QR flyback converter experimental circuits with Si FET and with GaN FET were separately produced in 12W class. As a result of the experiment, the experimental circuit of the QR flyback converter using GaN FET reached a high efficiency of 90% or more when the load power was 2W or more, and the maximum efficiency was observed to be about 92%, and the maximum loss power was about 1.1W. Meanwhile, the efficiency of the experimental circuit with Si FET increased as the input voltage increased, and the maximum efficiency was observed to be about 82% when the load power was 9W or higher, and the maximum loss power was about 2.8W. From the results, it is estimated that that in the case of the experimental circuit applying the GaN FET switch, the power conversion efficiency was improved as the switching loss and conduction loss due to on-resistance were reduced, and the internal loss due to the synchronous rectifier was minimized. Consequently, it is concluded that the GaN FET is suitable for under 20W class power supply unit as a high efficiency power switch.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.5
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• pp.451-458
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• 2002

Absorptive type SP3T(Single Pole Three Throw) and SP8T switch modules over the 6-18 GHz are designed and fabricated. The epitaxial structure of GaAs PIN diode for switch modules are designed for low loss and high power capability. The maximum input power of SP3T and SP8T switch modules are 2 W and 1 W, respectively. The switching time with driver circuit is less than 130 nsec. The maximum insertion loss of SP3T switch module and SP8T module shows 2.8 dB and 4.2 dB, respectively. The isolation between input port and output port is more than 55 dB. Two switch modules for electronic warfare system have passed the environment tests of the related test items.

• Proceedings of the KIEE Conference
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• 2001.07b
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• pp.946-949
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• 2001

This paper proposes a new zero-current switching (ZCS) pulse-width modulation (PWM) switch cell that has no additional conduction loss of the main switch. In this cell, the main switch and the auxiliary switch turn on and turn off under zero current condition. The diodes commutate softly and the reverse recovery problems are alleviated. The conduction loss and the current stress of the main switch are minimized, since the resonating current for the soft switching does not flow through the main switch. Based on the proposed ZCS PWM switch cell, a new family of dc to dc PWM converters is derived. The new family of ZCS PWM converters is suitable for the high power applications employing IGBTs. Among the new family of dc to dc PWM converters, a boost converter was taken as an example and has been analyzed. Design guidelines with a design example are described and verified by experimental results from the 2.5 kW prototype boost converter operating at 40kHz.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.710-713
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• 2004

The design, simulation, modeling and measurement of a low temperature co-fired ceramic (LTCC) RF switch module for GSM applications is presented in this paper. RF switch module is constructed using a Rx/Tx switching circuit and integrated low pass filter. The low pass filter function was designed to operate in th GSM band. Insertion and return loss of the low pass filter were designed less than 0.3 dB and better than 12.7 dB at 900 MHz. The RF switch module contained 10 embedded passives and 3 surface mount components integrated on $4.6{\times}4.8{\times}1.2$ nm, 6-layer multi-layer integrated circuit. The insertion loss of switch module was measured at 900 MHz was 11 dB.

• Proceedings of the IEEK Conference
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• 2000.06a
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• pp.123-126
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• 2000

In this paper, we are proposed to pushing window input buffer A.T.M Switch that is not use memory read and write of general window police. Pushing window switch is superior to general window switch in performance but is large to general window switch in cross point number. Max throughput and Cell occupying probability results are verified by analysis an simulation. The evaluation of performance is max throughput and cell loss probability and mean queue length.

• Proceedings of the IEEK Conference
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• 2000.11a
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• pp.441-444
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• 2000

This paper covers the performance testing for layer 3 Ethernet switch based on various methodologies by which we can measure essential metrics such as throughput, latency, frame loss rate, and back to back frames. In the first place, layer 2 and layer 3 switch evolution is introduced followed by description of IP packet switching in layer 3 switch. And then, the above test metrics and test methodologies are illustrated as well. At last, we conduct the performance testing for layer 3 switch in case of transmitting packets of 64, 128, 256, 512, 1024, 1280, and 1518 byte size and analyze then results.

• The Transactions of the Korean Institute of Power Electronics
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• v.27 no.6
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• pp.489-497
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• 2022

This work investigates the commutation characteristics of the current flowing through an electrical-contact-type switch to the semiconductor switch branch during the breaking operation of hybrid DC switchgear. A simple, reliable, low-cost natural commutation method is proposed, and the current commutation characteristics are analyzed in accordance with the conduction voltage drop of the semiconductor switch branch through experiments. A prototype 400 V/10 A class natural commutation type hybrid DC switchgear is set up. Its performance is verified, and its characteristics are analyzed.