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3:1 Bandwidth Switch Module by Using GaAs PH Diode  

정명득 (국방과학연구소)
이경학 (LG전자기술원)
박동철 (충남대학교)
Publication Information
The Journal of Korean Institute of Electromagnetic Engineering and Science / v.13, no.5, 2002 , pp. 451-458 More about this Journal
Abstract
Absorptive type SP3T(Single Pole Three Throw) and SP8T switch modules over the 6-18 GHz are designed and fabricated. The epitaxial structure of GaAs PIN diode for switch modules are designed for low loss and high power capability. The maximum input power of SP3T and SP8T switch modules are 2 W and 1 W, respectively. The switching time with driver circuit is less than 130 nsec. The maximum insertion loss of SP3T switch module and SP8T module shows 2.8 dB and 4.2 dB, respectively. The isolation between input port and output port is more than 55 dB. Two switch modules for electronic warfare system have passed the environment tests of the related test items.
Keywords
switch module; broadband; CaAs PIN diode; MMIC; high power;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
연도 인용수 순위
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