• Journal of Electrical Engineering and Technology
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• v.10 no.3
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• pp.1015-1024
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• 2015

This paper introduces a low cost, high efficiency, high performance three-phase unified power quality conditioner (UPQC) by using four-switch three-phase inverters (FSTPIs) and an extra capacitor in the shunt active power filter (APF) side of the UPQC. In the proposed UPQC, both shunt and series APFs are developed by using FSTPIs so that the number of switching devices is reduced from twelve to eight devices. In addition, by inserting an additional capacitor in series with the shunt APF, the DC-link voltage in the proposed UPQC can also be greatly reduced. As a result, the system cost and power loss of the proposed UPQC is significantly minimized thanks to the use of a smaller number of power switches with a lower rating voltage without degrading the compensation performance of the UPQC. Design of passive components for the proposed UPQC to achieve a good performance is presented in detail. In addition, comparisons on power loss, overall system efficiency, compensation performance between the proposed UPQC and the traditional one are also determined in this paper. Simulation and experimental studies are performed to verify the validity of the proposed topology.

• Journal of Power Electronics
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• v.19 no.6
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• pp.1413-1428
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• 2019

In this paper, a novel zero-voltage and zero-current switching (ZVZCS) interleaved two switch forward converter is proposed. By using a coupled-inductor-type smoothing filter, a snubber capacitor, the parallel capacitance of the leading switches and the transformer parasitic inductance, the proposed converter can realize soft-switching for the main power switches. This converter can effectively reduce the primary circulating current loss by using the coupled inductor and the snubber capacitor. Furthermore, this converter can reduce the reverse recovery loss, parasitic ringing and transient voltage stress in the secondary rectifier diodes caused by the leakage inductors of the transformer and the coupled inductance. The operation principle and steady state characteristics of the converter are analyzed according to the equivalent circuits in different operation modes. The practical effectiveness of the proposed converter was is illustrated by simulation and experimental results via a 500W, 100 kHz prototype using the power MOSFET.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.4 s.119
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• pp.364-371
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• 2007

In this paper, the design and implementation of high-power PIN diode switch modules and high-speed switch driver circuits are presented for Wibro base stations. To prevent isolation degradation due to parasitic inductances of conventional packaged PIN diodes and to improve power handling capabilities of the switch modules, bare diode chips are used and carefully placed in a PCB layout, which makes bonding wire inductances to be absorbed in the impedance of a transmission line. The switch module is designed and implemented to have a maximum performance while using a minimum number of the diodes. It shows an insertion loss of ${\sim}0.84\;dB$ and isolation of 80 dB or more at 2.35 GHz. The switch driver circuit is also fabricated and measured to have a switching speed of ${\sim}200\;nsec$. The power handling capability test demonstrates that the module operates normally even under a digitally modulated 70 W RF signal stress.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.31 no.2A
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• pp.201-206
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• 2006

A SPST Switch MMIC which used for Microwave Switch Matrix(MSM) of communications satellite payload with multi-beam function has been designed and fabricated. New RE FET switch configuration has been devised to improve power characteristics and isolation. Input and output return losses are better than another switches reported previously for both On and Off states. The MMIC chips were fabricated in 0.15um GaAs pHEMT process and measured insertion loss less than 2.0dB and isolation more than 63dB in the frequency range of 3GHz$\∼$4GHz. Output 3rd order interceptpoint above 32dBm has been recorded and the value is very high even though the unit pHEMT has gate width of 0.2mm and only four pHEMT are used in the MMTC.

• Transactions on Electrical and Electronic Materials
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• v.17 no.2
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• pp.92-97
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• 2016

This paper presents design and simulation of wide band RF microswitch that uses electrostatic actuation for its operation. RF MEMS devices exhibit superior high frequency performance in comparison to conventional devices. Similar techniques that are used in Very Large Scale Integration (VLSI) can be employed to design and fabricate MEMS devices and traditional batch-processing methods can be used for its manufacturing. The proposed switch presents a novel design approach to handle reliability concerns in MEMS switches like dielectric charging effect, micro welding and stiction. The shape has been optimized at actuation voltage of 14-16 V. The switch has an improved restoring force of 20.8 μN. The design of the proposed switch is very elemental and primarily composed of electrostatic actuator, a bridge membrane and coplanar waveguide which are suspended over the substrate. The simple design of the switch makes it easy for fabrication. Typical insertion and isolation of the switch at 1 GHz is -0.03 dB and -71 dB and at 85 GHz it is -0.24 dB and -29.8 dB respectively. The isolation remains more than - 20 db even after 120 GHz. To our knowledge this is the first demonstration of a metal contact switch that shows such a high and sustained isolation and performance at W-band frequencies with an excellent figure-of merit (fc=1/2.pi.Ron.Cu =1,900 GHz). This figure of merit is significantly greater than electronic switching devices. The switch would find extensive application in wideband operations and areas where reliability is a major concern.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.5
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• pp.1038-1043
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• 2003

A capacitive-coupled configuration MEMS switch is designed and fabricated, and its characteristics are measured. Low actuation voltage has been achieved by means of small distance between signal line and membrane. Minimum actuation voltage is about 11V. Isolation is around 40dB and insertion loss is about 0.2dB at 2GHz.

• Proceedings of the KIPE Conference
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• 2005.07a
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• pp.266-268
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• 2005

A new synchronous switch controlled transient current build-up zero voltage switching (TCB-ZVS) forward converter is proposed. The proposed converter is suitable for the low-voltage and high-current applications. The features of the proposed converter are low conduction loss of magnetizing current, no additional circuit for the ZVS operation, high efficiency, high power density and low EMI noise throughout all load conditions.

• Journal of Electrical Engineering and Technology
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• v.11 no.2
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• pp.367-376
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• 2016

This paper presents a cell balancing method for a single switch flyback converter with a multi-winding transformer. The conventional method using a flyback converter with a multi-winding transformer is simple and easy to control, but the voltage of each secondary winding coil might be non-uniform because of the unequal effective turn-ratio. In particular, it is difficult to control the non-uniform effect using turn-ratios because secondary coil has a limited number of turns. The non-uniform secondary voltages disturb the cell balancing procedure and induce an unbalance in cell voltages. Individual cell control by adding a switch for each cell can reduce the undesirable effect. However, the circuit becomes bulky, resulting in additional loss. The proposed method here uses the conventional flyback converter with an adjustment made to the output filters of the cells, instead of the additional switch. The magnitude of voltage applied to a particular cell can be reduced or increased according to the adjusted filter and the selected switching frequency. An analysis of the conventional converter configuration and the filter design method reveals the possibility of adequate cell balancing control without any additional switch on the secondary side.

• Journal of IKEEE
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• v.13 no.3
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• pp.1-6
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• 2009

In this paper, the external matching circuits were designed in order to compensate the efficiency which decreases by human body effect in the internal antenna phone. Comparing the two types of matching circuit, we selected the structure to minimize the switch stress. RF MEMS switch using low voltage was compared with FET switch and measured the performance in the handset. Here, the detection circuit which can couple th reflection power from antenna was added in the handset and we set up the demonstration system that can compensate the loss of hand effect automatically. In this system, when hand effect occurred, the radiation power increased 2.5dB by operation the matching circuit.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.25 no.1A
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• pp.56-63
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• 2000

In this paper, we design new high performance ATM switch architectures based on a Generalized Shuffle network(GSN). The GSN is a distributed network topology with the number of nodes in O(N). To improve the throughput of the switch, a layering strategy called Weaved GSN(WGSN). WGSN has an additional connection links between switching elements which locate in the same position of adjacent GSNs. The analysis and simulation are performed under uniform and full load conditions, and the results show that the proposed switch has better throughput and cell loss performance when compared with other banyan-based switch architectures known so far.