• Proceedings of the KIEE Conference
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• 2003.07e
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• pp.158-161
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• 2003

A new soft switching technique that improves performance of the high power factor boost rectifier by reducing switching losses is introduced. The losses are reduced by air active snubber which consists of an inductor, a capacitor a rectifier, and an auxiliary switch. Since the boost switch turns off with zero current, this technique is well suited for implementations with insulated gate bipolar transistors. The reverse recovery related losses of the rectifier are also reduced by the snubber inductor which is connected in series with the boost switch and the boost rectifier. In addition, the auxiliary switch operates with zero voltage switching. A complete design procedure and extensive performance evaluation of the proposed active snubber using a 1.2[kW] high power factor boost rectifier operating from a $90[V_{rms}]$ input are also presented.

• Proceedings of the IEEK Conference
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• 1999.06a
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• pp.122-125
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• 1999

In this paper, we propose a new architecture of the Banyan switch for a high speed networking and the high speed parallel computer. The proposed switching network with a remodeled architecture is a newly modified Banyan network with eight input and output pots, respectively. We have analysed the maximum throughput of the revised switch. Our analyses has shown that under the uniform random traffic load, the FIFO discipline is limited to 70％. Therefore the result of the analyses shows that the results of the networking simulation with the new switch are feasible and if we adopt such as new architecture of the revised model of the Banyan switch, the hardware complexity can be reduced. The FIFO discipline has increased about 11% when we compare the switching system with the input buffer system. We have designed and verified the new switching system in VHDL.

• Proceedings of the KIEE Conference
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• 1997.11a
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• pp.448-452
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• 1997

Theoretical average current and rms current equations are solved using the analytical method in the 3phase voltage-fed inverter. Experimental switch current equations are established by simulation and compared with theoretical equations. As a result of analysis, average and rms currents of switch devices are represented by a function as power factor and modulation index. Especially, equations of this paper are represented as a function of a single factor(K) equal to the product of the power factor and modulation index. Method that can find current levels of switch devices for inverter design and conduction loss of inverter in a simple and accurate manner is presented. Influences of modulation method on switch current are also studied.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1766-1768
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• 2002

The current density in the IPS(Inverse Pinch Switch) is 1/62 times less than that in the spark gap. It was shown that in comparison with the spark gap, the switch inductance of the IPS is largely reduced and the useful lifetime is significantly increased. In the paper, the design technology of a closing switch, especially IPS triggered by electrical signal for pulsed power system with a very high voltage and current is presented.

• 제어로봇시스템학회:학술대회논문집
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• 2000.10a
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• pp.318-318
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• 2000

Current signal square based on switch current is presented in this article. This is the new technique that can design current signal square circuit by using switch-current memory cell, current square and sample and hold technique, which have been presented by the general switch-current. This principle which is present have the good electrical characteristics such as the low input impedance, high output impedance and high frequency response. The system can also operate in the audio frequency range to the high frequency current signal. The system application of this technique can be apply to the current signal multiplier by quarter square technique. The experimental results agree well with the theory as high accuracy and linearity.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.3
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• pp.132-138
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• 2005

In this paper a DPDT(Double-Pole Double Through) switch with defected ground structure(DGS) is proposed. The equivalent circuit for the proposed switch structure is derived according to based on equivalent circuit of proposed DGS unit structure. The equivalent circuit parameters of DGS unit are extracted by using the circuit analysis method. The on/off operation of the proposed switch is obtained by varying the capacitance of the varactor diode at the defected ground plane. In the case of ON state, the insertion loss of the fabricated DPDT was shown under 1dB. And in OFF state, we found the rejection characteristic over 20dB at the designed frequency 2.45GHz. The experimental results show excellent insertion loss at on state and isolation at off state.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.2233-2235
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• 2000

We present the characteristics of microwave and mechanical behavior for the electrostatically actuated z-shaped laterally driven micriomachined CPW SPST(Single Pole Single Throw) Switch, which is for the application of the microwave communication systems. In this paper, we have aimed to maintain advantages. such as low insertion loss and low power consumption that the previously developed RF MEMS Switch has and minimize also stiction problem. enhance the microwave characteristics by etching of substrate beneath the switch, realize the pull-in voltage of below 30V. The optimized design parameters of the MEMS Switch can be selected by the analysis of the mechanical behavior and the use of ANSYS simulation method.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.45 no.2
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• pp.193-198
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• 1996

Low power superconducting persistent current switch(PCS) for the superconducting magnet systems in the persistent mode was developed and its experimental results were analyzed when the system was charged or discharged. The multifilament NbTi wire with Cu matrix was used for the PCS. The constructed NbTi superconducting switch with superconducting magnet system operated successfully. It also operated on-off switching action with good stabilization. The maximum operating current in persistent mode was 60A (at 1T). In persistent current mode, the decay of the persistent current at 60A was observed. Its decay was 3.55% in 60 min. It is possible to make the persistent current switch with the better decaying of persistent current if some problems for joint resistance are solved.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.9
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• pp.546-551
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• 2000

A micromechanical switch that can be used as a logic gate is described in this paper. This switch consists of fixed input electrodes an output electrode Vcc/GND electrodes and movable plates suspended by crab-leg flexures. for mechanical switching of an electrical signal a parallel plate actuator which comes in contact with output electrode was used. Provided that movable plates are connected to Vcc and a low input voltage(ground signal) is applied to the fixed input electrodes the movable plates are pulled by an electrostatic force between the fixed input electrodes and the movable plates. the proposed micromechanical switch was fabricated by surface micromachining technology with$2\mum$ -thick poly-Si and the measured threshold voltage for ON/OFF switching was 23.5V.

• Proceedings of the KIPE Conference
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• 2012.07a
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• pp.230-231
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• 2012

This paper describes a gate driver that operates numerous semiconductor switch in the solide-state pulsed power modulator. the proposed gate driver is designed to receive both the isolated drive-power and the on/off pulse signals through the transformer. Moreover, the IGBT-switch can be quickly turned off by adding protection circuit. Therefore it protects the IGBT-switch from the arc condition that frequently occurs in high-voltage pulse application. To comprehend operating characteristic of each IGBT-switch in pulse output condition, the device consisting of a high efficiency soft-switching capacitor charger and two series stacking IGBT-switch is developed. Finally, the relability of the proposed gate driver and the device for its test are proved through PSpice simulation and experiments.