• 대한치과보철학회지
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• 제44권4호
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• pp.443-454
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• 2006

Purpose: This study aims to get the fundamental data which is necessary to the development direction of implant surface treatment hereafter, based on the understanding the surface structure and properties of titanium which is suitable for the absorption of initial tissue fluid by researching effects of additional surface treatments fir sandblasted with large git and acid-etched(SLA) titanium on surface micro-roughness, static wettability, fibronectin adsorption Materials and Method: In the Control groups, the commercial pure titanium disks which is 10mm in diameter and 2mm in thickness were treated with HCI after sandblasting with 50$\mu$m $Al_2O_3$. The experiment groups were made an experiment each by being treated with 1) 22.5% nitric acid according to SLA+ASTM F86 protocol, 2) SLA+30% peroxide, 3) SLA+NaOH, 4) SLA+ Oxalic acid, and 5) SLA+600$^{\circ}C$ heating. In each group, the value of Ra and RMS which are the gauges of surface roughness was measured, surface wettability was measured by analyzing with Sessile drop method, and fibronectin adsorption was measured with immunological assay. The significance of each group was verified by (SPSS, ver.10.0 SPSS Inc.) Kruskal-Wallis Test. (α=0.05) And the correlation significance between Surface micro-roughness and surface wettability. surface roughness and fibronectin adsorption, and surface wettability and fibronectin adsorption was tested by Spearman's correlation analysis. Result: All measure groups showed the significant differences in surface micro-roughness, surface wettability, and fibronectin adsorption. (p<0.05) There was no significance in correlation among the surface micro-roughness, surface wettability, and fibronectin adsorption. (p>0.05) Conclusion: Surface micro-roughness and surface wettability rarely affected the absorption of initial tissue fluid on the surface of titanium.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 G
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• pp.2518-2520
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• 1998

Silicon can be reactive ion etched (RIE) either isotropically or anisotropically. In this paper, a new micromachining technology combining these two etching characteristics is proposed. In the proposed method, the fabrication steps are as follows. First. a polysilicon layer, which is used as the bottom electrode, is deposited on the silicon wafer and patterned. Then the silicon substrate is etched anisotropically to a few micrometer depth that forms a cavity. Then an PECVD oxide layer is deposited to passivate the cavity side walls. The oxide layers at the top and bottom faces are removed while the passivation layers of the side walls are left. Then the substrate is etched again but in an isotropic etch condition to form a round trench with a larger radius than the anisotropic cavity. Then a sacrificial PECVD oxide layer is deposited and patterned. Then a polysilicon structural layer is deposited and patterned. This polysilicon layer forms a pivot structure of a rocker-arm. Finally, oxide sacrificial layers are etched away. This new micromachining technology is quite simpler than conventional method to fabricate joint structures, and the devices that are fabricated using this technology do not require a flexing structure for motion.

• E2M - 전기 전자와 첨단 소재
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• 제10권1호
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• pp.39-44
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• 1997

Bulk type radiation detector of Au/Cd$_{1-x}$ Zn$_{x}$Te(x=20%)/Au structure using Cd$_{1-x}$ Zn$_{x}$Te(x=20%) wafer(3x4xl mm$^{3}$) grown by high pressure Bridgman method has been developed. We etched wafer surfaces with 2% Br-methanol solution and coated gold thin film on the surfaces by electroless deposition method for 5 min. in 49/o HAuCI$_{3}$ 4H20 solution. Initial etch rates of Cd, Zn and Te were 46%, 12% and 42% respectively. After etched, the surface of wafer was slightly revealed to Te rich condition. The leakage current was increased with etch time, but it didn't exceed 3nA at 50volt. The thickness of Au film was about 100nm by Rutherford Backscattering Spectroscopy(RBS). The resolution were 6.7% for 22.1 keV photon from 109 $^{109}$ Cd and 8.2% for 59.5 keV photon from $^{241}$ Am. The radiation detector such as Au/Cd$_{1-x}$ Zn$_{x}$Te(x=20%)/Au structure was more effective to monitor the low energy gamma radiation.iation.

• E2M - 전기 전자와 첨단 소재
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• 제9권4호
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• pp.372-378
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• 1996

The phtoreflectance(PR) spectra of B ion implanted semi-insulating(SI) GaAs were studied. Ion implantation was performed by 150keV implantation energy and 1*10/aup 12/-10$^{15}$ ions/c $m^{2}$ doses. Electronic band structure was damaged by ion implantation with above 1*10$^{13}$ ions/c $m^{2}$ dose. When samples were annealed, " peak was observed at 30-40meV below band gap( $E_{g}$). It should be noted that this energy is close to the ionization energies of S $i_{As}$ , and GeAs in G $a_{As}$ which are also found as impurities in LEC GaAs, it is therefore possible that this feature is related to S $i_{As}$ , or G $e_{As}$ and B ions by implanted defect associated with them. From PR spectra of etched samples which is as-implanted by 1*10$^{14}$ and 1*10$^{15}$ ions/c $m^{2}$ dose, the depth of destroyed electronic band structure was from surface to 0.2.mu.m below surface.nic band structure was from surface to 0.2.mu.m below surface.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 하계학술대회 논문집 C
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• pp.1137-1139
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• 1995

$SiN_x$ films deposited on bare Si and wet-etched Si by RPCVD were fabricated to investigated the effect of wet-etched surface of Si on the characteristics of the interface between $SiN_x$ and Si. FT-IR spectra on each film showed similar characteristics. However, it was confirmed that the electric characteristics(I-V, C-V) of the interface between $SiN_x$ and Si have been degraded by the wet etching process of Si, which is applied for the formation of Si field emitter array. Therefore, we suggest that the stacked structure of insulating layer with good interface characteristics is desirable for FED application.

• 한국재료학회지
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• 제22권2호
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• pp.66-70
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• 2012

Ti-Ni alloys are widely used in numerous biomedical applications (e.g., orthodontics, cardiovascular science, orthopaedics) due to their distinctive thermomechanical and mechanical properties, such as the shape memory effect, superelasticity and low elastic modulus. In order to increase the biocompatibility of Ti-Ni alloys, many surface modification techniques, such as the sol-gel technique, plasma immersion ion implantation (PIII), laser surface melting, plasma spraying, and chemical vapor deposition, have been employed. In this study, a Ti-49.5Ni (at%) alloy was electrochemically etched in 1M $H_2SO_4$+ X (1.5, 2.0, 2.5) wt% HF electrolytes to modify the surface morphology. The morphology, element distribution, crystal structure, roughness and energy of the surface were investigated by scanning electron microscopy (SEM), energy-dispersive Xray spectrometry (EDS), X-ray diffractometry (XRD), atomic force microscopy (AFM) and contact angle analysis. Micro-sized pores were formed on the Ti-49.5Ni (at%) alloy surface by electrochemical etching with 1M $H_2SO_4$+ X (1.5, 2.0, 2.5) wt% HF. The volume fractions of the pores were increased by increasing the concentration of the HF electrolytes. Depending on the HF concentration, different pore sizes, heights, surface roughness levels, and surface energy levels were obtained. To investigate the osteoblast adhesion of the electrochemically etched Ti-49.5Ni (at%) alloy, a MTT test was performed. The degree of osteoblast adhesion was increased at a high concentration of HF-treated surface structures.

• 대한치과기공학회지
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• 제39권4호
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• pp.243-251
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• 2017

Purpose: The purpose of this study was to investigate the effects of etching by monitoring the etched surfaces and the shear bonding strength of resin and porcelain with etched zirconia. Methods: The CAD/CAM was used to produce 24 zirconia blocks in groups of six. The zirconia specimen surfaces were sandblasted, and they were then divided into 12 specimens with surface etching and 12 specimens without etching for the control group. 12 specimens of composite resin were bonded using a curing light, and 12 specimens of porcelain underwent vita porcelain build-up sintering and the shear bonding strength was measured using a universal testing system. The SEM photographs were taken in order to observe any differences in the surfaces before and after etching, and they were magnified by a factor of 8 in order to observe fractured surface types. Results: The results of the shear bonding strength measurements are as follows: For the composite resin tests, between zirconia and resin, the shear bonding strength of the control group (NZR) without surface etching was 4.68 Mpa and the experimental group (EZC) with surface etching was 9.65 Mpa, which is significantly higher. The crystal structure of the zirconia was confirmed to be different in observations of the surfaces before and after etching. Conclusion : In comparing the shear bonding strength of zirconia and composite resin, the effects of etching were found to be significant. The effects of surface etching were also observed in fractured surfaces between zirconia and porcelain. This is expected to be applicable to various prosthetics as surface etching on zirconia is used in clinics.

• 반도체디스플레이기술학회지
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• 제13권2호
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• pp.29-35
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• 2014

In this study general solar cell production process was complemented, with research on improvement of solar cell efficiency through surface structure and thermal annealing process. Firstly, to form the pyramid structure, the saw damage removal (SDR) processed surface was undergone texturing process with reactive ion etching (RIE). Then, for the formation of smooth pyramid structure to facilitate uniform doping and electrode formation, the surface was etched with HND(HF : HNO3 : D.I. water=5 : 100 : 100) solution. Notably, due to uniform doping the leakage current decreased greatly. Also, for the enhancement and maintenance of minority carrier lifetime, antireflection coating thermal annealing was done. To maintain this increased lifetime, front electrode was formed through Au plating process without high temperature firing process. Through these changes in two processes, the leakage current effect could be decreased and furthermore, the conversion efficiency could be increased. Therefore, compared to the general solar cell with a conversion efficiency of 15.89%, production of high efficiency solar cell with a conversion efficiency of 17.24% was made possible.

• 마이크로전자및패키징학회지
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• 제10권1호
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• pp.7-11
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• 2003

반도체 칩이나 전자제품에 사용되는 부품들은 작동할 때 발열을 하게 되며 발생한 열이 적절히 제거되지 않을 경우 제품 오작동의 원인이 된다. 이러한 열을 제거하기 위해 히트싱크(heatsink)와 냉각 팬 (cooling fan)을 조합한 냉각 구조가 사용된다. 그러나 히트싱크와 냉각 팬의 조합 구조는 복잡한 형상을 취하기 때문에 전기 전자 제품의 소형화 추세에 부응하기에는 어려움이 따른다. 냉각 효율은 히트싱크의 표면적과 히트싱크 제조시 사용된 재료에 따라 달라진다. 일반적인 냉각 구조의 한계를 극복하기 위한 방안으로써, Trach-etched 멤브레인의 표면과 기공(pore)에 무전해 금도금과 구리 도금을 실행하여 크기는 작으면서 표면적을 증가시킨 마이크로 히트싱크를 제조하였다. 제조한 마이크로 히트싱크의 구조는 주사현미경(SEM)과 광학 현미경으로 관찰하였으며, 일반적인 구리보다 열효율이 우수함을 방열 특성 실험을 통해 관찰하였다.

• 한국전기전자재료학회논문지
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• 제19권4호
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• pp.344-349
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• 2006

A sublimation epitaxial method, referred to as the Closed Space Technique (CST) was adopted to produce thick SiC epitaxial layers for power device applications. We aimed to systematically investigate the dependence of SiC epilayer quality and growth rate during the sublimation growth using the CST method on various process parameters such as the growth temperature and working pressure. The etched surface of a SiC epitaxial layer grown with low growth rate $(30{\mu}m/h)$ exhibited low etch pit density (EPD) of ${\sim}2000/cm^2$ and a low micropipe density (MPD) of $2/cm^2$. The etched surface of a SiC epitaxial layer grown with high growth rate (above $100{\mu}m/h$) contained a high EPD of ${\sim}3500/cm^2$ and a high MPD of ${\sim}500/cm^2$, which indicates that high growth rate aids the formation of dislocations and micropipes in the epitaxial layer. We also investigated the Schottky barrier diode (SBD) characteristics including a carrier density and depletion layer for Ni/SiC structure and finally proposed a MESFET device fabricated by using selective epilayer process.