• Journal of Periodontal and Implant Science
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• v.32 no.3
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• pp.489-500
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• 2002

The purpose of this study was to evaluate newly fabricated tricalcium phosphate(TCP)/chitosan microgranuls as bone substitutes. TCP/chitosan microgranules were fabricated by dropping TCP-chitosan suspension into the NaOH/ethanol solution. The size of microgranules could be controllable via airflow rate. PDGF-BB was loaded into the fabricated granules via freeze-drying methods(300 ng/20 mg). To evaluate cell proliferation, cultured osteoblasts cell lines(MC3T3-El) was dropped on the BioOss(R), chitosan microgranules, TCP/chitosan microgranules and cultured for 1, 7 , 14, and 28 days. Scanning electron microscopic observation was done after 7 days of culture and light microscopic examination was done after 28 days of culture. PDGF-BB release from the microgranules was tested. Rabbit calvarial defects(8 mm in diameter) were formed and chitosan, TCP/chitosan, PDGF-TCP/chitosan microgranules, and BioGran(R) were grafted to test the ability of new bone formation. At SEM view, the size of prepared microgranules was 250-1000 um and TCP powders were observed at the surface of TCP/chitosan microgranules. TCP powders gave roughness to the granules and this might help the attachment of osteoblasts. The pores formed between microgranules might be able to allow new bone ingrowth and vascularization. There were no significant differences in cell number among BioOss(R) and two microgranules at 28 day. Light and scanning electron microscopic examination showed that seeded osteoblastic cells were well attached to TCP/chitosan microgranules and proliferated in a multi-layer. PDGF-BB released from TCP/chitosan microgranules was at therapeutic concentration for at least 1 week. In rabbit calvarial defect models, PDGF-TCP/chitosan microgranules grafted sites showed thicker bone trabeculae pattern and faster bone maturation than others. These results suggested that the TCP/chitosan microgranules showed the potential as bone substitutes.

• Journal of Korea Technical Association of The Pulp and Paper Industry
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• v.40 no.5
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• pp.60-69
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• 2008

The principal reasons for applying a pigment coating to paper are to improve appearance and printability. The pigment coating provides a surface that is more uniform and more receptive to printing ink than are the uncoated fibers and, in turn, both facilitates the printing process and enhances the graphic reproduction. The improvement in print quality is readily apparent, especially in image areas or when multiple colors are involved. Although pigment coating of paper is to improve the printability, coated paper is not completely free from printing defects. Actually there are a number printing defects that are observed only with the coated papers. Among the printing defects that are commonly observed for coated papers, print mottle during multi-color offset printing is one of the most concerned defects, and it appears not only on solid tone area but also half dot print area. There are four main causes of print mottle ranging from printing inks, dampening solution, paper, and printing press or its operation. These indicates that almost every factors associated with lithographic printing can cause print mottle. Among these variation of paper quality influences most significantly on print mottle problems in multicolor offset printing, and this indicates that paper is most often to be blamed for its product deficiency as far as print mottle problems are concerned. Furthermore, most of the print mottle problems associated with paper is observed when coated papers are printed. Uncoated papers rarely show mottling problems. This indicates that print mottle is the most serious quality problems of coated paper products. Overcoming the print mottle is becoming more difficult because the operating speeds of coating and printing machines are increasing, coating weights are decreasing, and the demands on high-quality printing are increasing. Print mottle in offset printing is caused by (a) nonuniform back trap of ink caused by a nonuniform rate of ink drying, referred as "back trap mottle, and (b) nonuniform absorption of the dampening solution. Furthermore, both forms of print mottle have some relationship to the structure of the coated layer. The surest way of eliminating ink mottling is to eliminate unevenness in the base paper. Coating solutions, often easier to put into practice, should, however, be considered. In this paper the principal factors influencing print mottle of coated papers will be discussed. Especially the importance of base paper roughness, binder migration, even consolidation of coating layers, control of the drying rate, types of binders, etc. will be described.

• Journal of Korea Water Resources Association
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• v.33 no.4
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• pp.461-469
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• 2000

An numerical analysis of sediment-laden flow is carried out, and results are compared with the experiments of Coleman(1981, 1986) that included the several cases varying sediment size and quantity in open channel flow. K-$\omega$ turbulence model is selected for the fully turbulent flow field, and the concentration equation considering the fall velocity is adopted for the concentration field. The model of Einstein and Chien(1955) is applied to couple the velocity field and the concentration field. Most of researches have been carried out without considering the bed-load thickness, but it is found that the bed-load thickness cannot be ignored in case of a large amount of sediment or a large size of it. The bed-load thickness and surface roughness are considered in this study. Here, $\beta$ value, which is defined by the reciprocal of turbulent Schmidt number and is related with the concentration profile, is found to be varied according to the sediment size and quantity. Even though most of researchers have insisted that $\beta$ had always larger than 1.0, it may be concluded that $\beta$ can have smaller value than 1.0, that is coincident with the report of recent research.

• Journal of the Korean Magnetics Society
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• v.20 no.6
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• pp.222-227
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• 2010

$BiFeO_3$ (BFO) thin films were deposited on Pt/Ti/$SiO_2$/Si(100) substrates by RF magnetron sputtering method at room temperature. The influence of the flow rate of $O_2$ gas on the preparation of $BiFeO_3$ thin films was studied. XRD results indicate that the $BiFeO_3$ thin films were crystallized to the perovskite structure with the presence of small amount of impurity phases. The flow rate of $O_2$ gas has great affect on the microstructures and magnetic properties of $BiFeO_3$ thin films. As flow rate of $O_2$ gas increased, roughness and grain size of the thin films increased. $BiFeO_3$ thin films exhibited weak ferromagnetic behavior at room temperature. The PFM images revealed correlation between the surface morphology and the piezoresponse, indicating that the piezoelectric coefficient is related to microstructure.

• Journal of the Society of Cosmetic Scientists of Korea
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• v.36 no.4
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• pp.253-258
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• 2010

Until now, evaluating the efficacy of brightening mainly depends on total reflective light measurement. For example, SHV (Saturation, Hue, Value), $L^*$ $a^*$ $b^*$ (CIELAB color space system) color space system was used and lightness and saturation changes were chosen as major parameters for evaluating brightening effect. However, those parameters were calculated from total reflective light on the skin and it is hard to evaluate perceptive efficacy such as luminescence, and glossy. In this research, we applied new method for estimating change of luminescence of skin by using 'Lumiscan' which uses polarized light for detecting surface and inside reflective light independently. We also tested 15 different parameters for finding correlations between luminescence and those parameters. As a results, our 2 different brightening products showed 5 ~ 9 % increase of luminescence at 4 and 8 weeks. And we also found that skin roughness (-28 %), melanin index (-17 %), redness (-7 %), hydration (15 %), and lightness (6 %) were related to luminescence of skin.

• Korean Journal of Materials Research
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• v.10 no.12
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• pp.807-811
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• 2000

CeO$_2$ and SrBi$_2$Ta$_2$O$_{9}$ (SBT) thin films for MFISFET (Metal-ferroelectric-insulator-semiconductor-field effect transistor) were deposited by r.f. sputtering and pulsed laser ablation method, respectively. The effects of sputtering gas ratio(Ar:O$_2$) during deposition for CeO$_2$ films were investigated. The CeO$_2$ thin films deposited on Si(100) substrate at $600^{\circ}C$ exhibited (200) preferred orientation. The preferred orientation, Brain size and surface roughness of films decreased with increasing oxygen to argon gas ratio. The films deposited under the condition of Ar:O$_2$= 1 : 1 showed the best C- V characteristics. The leakage current of films showed the order of 10$^{-7}$ ~10$^{-8}$ A at 100kV/cm. The SBT thin films on CeO$_2$/Si substrate showed dense microstructure of polycrystalline phase. From the C-V characteristics of MFIS structure with SBT film annealed at 80$0^{\circ}C$, the memory window width was 0.9V at 5V The leakage current density of Pt/SBT/CeO$_2$/Si structure annealed at 80$0^{\circ}C$ was 4$\times$10$^{-7}$ /$\textrm{cm}^2$ at 5V.

• The Journal of the Korea institute of electronic communication sciences
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• v.12 no.6
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• pp.1019-1026
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• 2017

The structural properties of $HfO_2$ films could be improved by calibrating the working pressure owing to the enhanced quality of a thin film. We deposited $HfO_2$ films on glass substrates by radio frequency (RF) magnetron sputtering under a base vacuum pressure lower than $4.5{\times}10^{-6}Pa$, RF power of 100 W, substrate temperature of $300^{\circ}C$. The working pressures were varied from 1 mTorr to 15 mTorr. Subsequently, their structural and optical properties were investigated. In particular, the $HfO_2$ film deposited at 1 mTorr had superior properties than the others, with a crystallite size of 10.27 nm, surface roughness of 1.173 nm, refractive index of 2.0937 at 550 nm, and 84.85 % transmittance at 550 nm. These results indicate that the $HfO_2$ film deposited at 1 mTorr is suitable for application in transparent electric devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.236-236
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• 2008

(Bi,La)$Ti_3O_{12}$(BLT) thin film is one of the most attractive materials for ferroelectric random access memory (FRAM) applications due to its some excellent properties such as high fatigue endurance, low processing temperature, and large remanent polarization [1-2]. The authors firstly investigated and reported the damascene process of chemical mechanical polishing (CMP) for BLT thin film capacitor on behalf of plasma etching process for fabrication of FRAM [3]. CMP process could prepare the BLT capacitors with the superior process efficiency to the plasma etching process without the well-known problems such as plasma damages and sloped sidewall, which was enough to apply to the fabrication of FRAM [2]. BLT-CMP characteristics showed the typical oxide-CMP characteristics which were related in both pressure and velocity according to Preston's equation and Hernandez's power law [2-4]. Good surface roughness was also obtained for the densification of multilevel memory structure by CMP process [3]. The well prepared BLT capacitors fabricated by CMP process should have the sufficient ferroelectric properties for FRAM; therefore, in this study the electrical properties of the BLT capacitor fabricated by CMP process were analyzed with the process parameters. Especially, the effects of CMP pressure, which had mainly affected the removal rate of BLT thin films [2], on the electrical properties were investigated. In order to check the influences of the pressure in eMP process on the ferroelectric properties of BLT thin films, the electrical test of the BLT capacitors was performed. The polarization-voltage (P-V) characteristics show a decreased the remanent polarization (Pr) value when CMP process was performed with the high pressure. The shape of the hysteresis loop is close to typical loop of BLT thin films in case of the specimen after CMP process with the pressures of 4.9 kPa; however, the shape of the hysteresis loop is not saturated due to high leakage current caused by structural and/or chemical damages in case of the specimen after CMP process with the pressures of 29.4 kPa. The leakage current density obtained with positive bias is one order lower than that with negative bias in case of 29.4 kPa, which was one or two order higher than in case of 4.9 kPa. The high pressure condition was not suitable for the damascene process of BLT thin films due to the defects in electrical properties although the better efficiency of process. by higher removal rate of BLT thin films was obtained with the high pressure of 29.4 kPa in the previous study [2].

• Journal of Advanced Marine Engineering and Technology
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• v.37 no.5
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• pp.453-460
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• 2013

The surface roughness and heat transfer enhancement devices are known to increase the performance of a flat plate soar collector. This study includes the experiments on the effect of the several heat transfer enhancement devices inserted in duct to simulate the flat-plate solar collector. Experiment was basically at a constant heat flux on the upper duct wall. Inserted heat transfer enhancement devices are Chamfered rib $10^{\circ}$, Chamfered rib $20^{\circ}$, Rib & Groove and Rib & Dimple. Reynolds number is in the range of 2,300 to 22,000 which corresponds to turbulent regime. With the heat transfer enhancement devices, heat transfer would increase by the secondary flow and the increase of the heat transfer area. Pressure drop also increases with the insertion of the enhancement devices. Rib & Dimple model is the best in heat transfer enhancement, however, Chamfered rib $10^{\circ}$ model is the lowest in the pressure drop. Considering the heat transfer enhancement simultaneously with low pressure drop increase, performance factor was the best for the Chamfered rib $10^{\circ}$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.2
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• pp.15-20
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• 2010

In this study, AZO (Al: 3 wt%) thin films have been prepared on PES Plastic substrates at various working pressure (5~20 mTorr), $O_2$ gas flow rate(0~3%) and the fixed substrate temperature of 200 f by using the RF magnetron sputtering and their optical and electrical properties have been studied. The XRD measurement shows that AZO thin films exhibit c-axis preferred orientation. From the results of AFM measurements, it is known that the lowest surface roughness (3.49 nm) is obtained for the AZO thin film fabricated at 5 mTorr of working pressure and 3% of $O_2$ gas flow rate. The optical transmittance of AZO thin films is measured as 80% in the visible region. We observe that the energy band gap of AZO thin films increases with decreasing the working pressure and the $O_2$ gas flow rate. This phenomenon is due to the Burstein-Moss effect. Hall measurement shows that the maximum carrier concentration ($2.63\;{\times}\;10^{20}\;cm^{-3}$) and the minimum resistivity ($4.35\;{\times}\;10^{-3}\;{\Omega}cm$) are obtained for the AZO thin film fabricated at 5mTorr of working pressure and 0% of $O_2$ gas flow rate.