• Journal of the Korean Crystal Growth and Crystal Technology
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• v.29 no.6
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• pp.345-351
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• 2019

Recently, ink-jet printing technology has been applied for various industries such as semiconductor, display, ceramic tile decoration. Ink-jet printing has advantages of high resolution patterning, fast printing speed, high ink efficiency and many attempts have been made to apply functional materials with excellent physical and chemical properties for the ink-jet printing process. Due to these advantages, research scope of ink-jet printing is expanding from conventional two-dimensional printing to three-dimensional printing. In order to expand the application of ink-jet printing, it is necessary to optimize the rheological properties of the ink and the interaction with the substrate. In this study, photo curable ceramic complex ink containing nano silica particles were synthesized and its printability was characterized. Contact angle of the photo curable silica ink were modified by control of the ink composition and the surface property of the substrate. Effects of contact angle on printing resolution and three-dimensional printability were investigated in detail.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.344-344
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• 2014

Transparent amorphous oxide semiconductors such as a In-Ga-Zn-O (a-IGZO) have advantages for large area electronic devices; e.g., uniform deposition at a large area, optical transparency, a smooth surface, and large electron mobility >10 cm2/Vs, which is more than an order of magnitude larger than that of hydrogen amorphous silicon (a-Si;H).1) Thin film transistors (TFTs) that employ amorphous oxide semiconductors such as ZnO, In-Ga-Zn-O, or Hf-In-Zn-O (HIZO) are currently subject of intensive study owing to their high potential for application in flat panel displays. The device fabrication process involves a series of thin film deposition and photolithographic patterning steps. In order to minimize contamination, the substrates usually undergo a cleaning procedure using deionized water, before and after the growth of thin films by sputtering methods. The devices structure were fabricated top-contact gate TFTs using the a-IGZO films on the plastic substrates. The channel width and length were 80 and 20 um, respectively. The source and drain electrode regions were defined by photolithography and wet etching process. The electrodes consisting of Ti(15 nm)/Al(120 nm)/Ti(15nm) trilayers were deposited by direct current sputtering. The 30 nm thickness active IGZO layer deposited by rf magnetron sputtering at room temperature. The deposition condition is as follows: a rf power 200 W, a pressure of 5 mtorr, 10% of oxygen [O2/(O2+Ar)=0.1], and room temperature. A 9-nm-thick Al2O3 layer was formed as a first, third gate insulator by ALD deposition. A 290-nm-thick SS6908 organic dielectrics formed as second gate insulator by spin-coating. The schematic structure of the IGZO TFT is top gate contact geometry device structure for typical TFTs fabricated in this study. Drain current (IDS) versus drain-source voltage (VDS) output characteristics curve of a IGZO TFTs fabricated using the 3-layer gate insulator on a plastic substrate and log(IDS)-gate voltage (VG) characteristics for typical IGZO TFTs. The TFTs device has a channel width (W) of $80{\mu}m$ and a channel length (L) of $20{\mu}m$. The IDS-VDS curves showed well-defined transistor characteristics with saturation effects at VG>-10 V and VDS>-20 V for the inkjet printing IGZO device. The carrier charge mobility was determined to be 15.18 cm^2 V-1s-1 with FET threshold voltage of -3 V and on/off current ratio 10^9.

• Journal of the Korean Vacuum Society
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• v.21 no.4
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• pp.199-204
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• 2012

$SF_6$ gas is widely used for dry etching process of semiconductor and display fabrication process. But $SF_6$ gas is considered for typical greenhouse gas for global warming. So it is necessary to research relating to $SF_6$ alternatives reducing greenhouse effect in semiconductor and display. $C_3F_6$ gas is one of the promising candidates for it. We studied about etch characteristics by performing Reactive Ion Etching process of dry etching and reduced gas element exhausted on etching process using absorbent Zeolite 5A. $Si_3N_4$ thin film was deposited to 500 nm with Plasma Enhanced Chemical Vapor Deposition and we performed Reactive Ion Etching process after patterning through photolithography process. It was observed that the etch rate and the etched surface of $Si_3N_4$ thin film with Scanning Electron Microscope pictures. And we measured and compared the exhausted gas before and after the absorbent using Gas Chromatograph-Mass Spectrophotometry.

• Journal of the Korean Society for Nondestructive Testing
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• v.36 no.1
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• pp.18-26
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• 2016

The semiconductor industry is one of the key industries of Korea, which has continued growing at a steady annual growth rate. Important technology for the semiconductor industry is high integration of devices. This is to increase the memory capacity for unit area, of which key is photolithography. The photolithography refers to a technique for printing the shadow of light lit on the mask surface on to wafer, which is the most important process in a semiconductor manufacturing process. In this study, the width and step-height of wafers patterned through this process were measured to ensure uniformity. The widths and inter-plate heights of the specimens patterned using photolithography were measured using transmissive digital holography. A transmissive digital holographic interferometer was configured, and nine arbitrary points were set on the specimens as measured points. The measurement of each point was compared with the measurements performed using a commercial device called scanning electron microscope (SEM) and Alpha Step. Transmission digital holography requires a short measurement time, which is an advantage compared to other techniques. Furthermore, it uses magnification lenses, allowing the flexibility of changing between high and low magnifications. The test results confirmed that transmissive digital holography is a useful technique for measuring patterns printed using photolithography.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.6
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• pp.1099-1103
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• 2007

TFT's have been intensively researched for possible electronic and display applications. Through tremendous engineering and scientific efforts, a-Si:H TFT fabrication process was greatly improved. In this paper, the reason on defects occurring at a-Si:H TFT fabrication process is analyzed and solved, so a-Si:H TFT's yield is increased and reliability is improved. The a-Si:H TFT of this paper is inverted staggered type TFT. The gate electrode is formed by patterning with length of $8{\mu}m{\sim}16{\mu}m$ and width of $80{\sim}200{\mu}m$ after depositing with gate electrode (Cr). We have fabricated a-SiN:H, conductor, etch-stopper and photo-resistor on gate electrode in sequence, respectively. We have deposited n+a-Si:H, NPR(Negative Photo Resister) layer after forming pattern of Cr gate electrode by etch-slower pattern. The NPR layer by inverting pattern of upper Sate electrode is patterned and the n+a-Si:H layer is etched by the NPR pattern. The NPR layer is removed. After Cr layer is deposited and patterned, the source-drain electrode is formed. The a-Si:H TFT made like this has problems at photo-lithography process caused by remains of PR. When sample is cleaned, this remains of PR makes thin chemical film on surface and damages device. Therefor, in order to improve this problem we added ashing process and cleaning process was enforced strictly. We can estimate that this method stabilizes fabrication process and makes to increase a-Si:H TFT's yield.

• Korean Journal of Agricultural and Forest Meteorology
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• v.12 no.4
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• pp.307-316
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• 2010

Complex terrain refers to irregular surface properties of the earth that influence gradients in climate, lateral transfer of materials, landscape distribution in soils properties, habitat selection of organisms, and via human preferences, the patterning in development of land use. Complex terrain of mountainous areas represents ca. 20% of the Earth's terrestrial surface; and such regions provide fresh water to at least half of humankind. Most major river systems originate in such terrain, and their resources are often associated with socio-economic competition and political disputes. The goals of the TERRECO-IRTG focus on building a bridge between ecosystem understanding in complex terrain and spatial assessments of ecosystem performance with respect to derived ecosystem services. More specifically, a coordinated assessment framework will be developed from landscape to regional scale applications to quantify trade-offs and will be applied to determine how shifts in climate and land use in complex terrain influence naturally derived ecosystem services. Within the scope of TERRECO, the abiotic and biotic studies of water yield and quality, production and biodiversity, soil processing of materials and trace gas emissions in complex terrain are merged. There is a need to quantitatively understand 1) the ecosystem services derived in regions of complex terrain, 2) the process regulation occurred to maintain those services, and 3) the sensitivities defining thresholds critical in stability of these systems. The TERRECO-IRTG is dedicated to joint study of ecosystems in complex terrain from landscape to regional scales. Our objectives are to reveal the spatial patterns in driving variables of essential ecosystem processes involved in ecosystem services of complex terrain region and hence, to evaluate the resulting ecosystem services, and further to provide new tools for understanding and managing such areas.

• Journal of the Korean Vacuum Society
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• v.17 no.1
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• pp.16-22
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• 2008

We studied plasma etching of polycarbonate in $O_2/SF_6$, $O_2/N_2$ and $O_2/CH_4$. A capacitively coupled plasma system was employed for the research. For patterning, we used a photolithography method with UV exposure after coating a photoresist on the polycarbonate. Main variables in the experiment were the mixing ratio of $O_2$ and other gases, and RF chuck power. Especially, we used only a mechanical pump for in order to operate the system. The chamber pressure was fixed at 100 mTorr. All of surface profilometry, atomic force microscopy and scanning electron microscopy were used for characterization of the etched polycarbonate samples. According to the results, $O_2/SF_6$ plasmas gave the higher etch rate of the polycarbonate than pure $O_2$ and $SF_6$ plasmas. For example, with maintaining 100W RF chuck power and 100 mTorr chamber pressure, 20 sccm $O_2$ plasma provided about $0.4{\mu}m$/min of polycarbonate etch rate and 20 sccm $SF_6$ produced only $0.2{\mu}m$/min. However, the mixed plasma of 60 % $O_2$ and 40 % $SF_6$ gas flow rate generated about $0.56{\mu}m$ with even low -DC bias induced compared to that of $O_2$. More addition of $SF_6$ to the mixture reduced etch of polycarbonate. The surface roughness of etched polycarbonate was roughed about 3 times worse measured by atomic force microscopy. However examination with scanning electron microscopy indicated that the surface was comparable to that of photoresist. Increase of RF chuck power raised -DC bias on the chuck and etch rate of polycarbonate almost linearly. The etch selectivity of polycarbonate to photoresist was about 1:1. The meaning of these results was that the simple capacitively coupled plasma system can be used to make a microstructure on polymer with $O_2/SF_6$ plasmas. This result can be applied to plasma processing of other polymers.