• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2003.10a
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• pp.78-79
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• 2003

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.2
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• pp.352-356
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• 2011

Transparent conducting oxide films like ITO/Au/ITO and AZO/Au/AZO were fabricated with a sputter at a low-temperature of less then $70^{\circ}C$ and their crystallization and opto-electrical properties were studied. X-ray diffractiometry showed that single-ITO layer was amorphous, whereas, ITO of ITO/Au/ITO multi-layer was crystal. The ITO crystallization and its orientation depended on Au crystallization. Surface roughness of the ITO-multi-layers were in the range of 29-88% of that of ITO-single layer. ITO on amorphous gold layer had more rough surface than ITO on crystal gold. The gold layer between ITO improved electrical conductivity. Carrier density, mobility, resistivity and sheet resistance of ITO-single layer were $2.3{\times}10^{19}/cm^3$, $85{\times}cm^2$/Vs, $31{\times}10^{-4}{\Omega}cm$, and $310{\times}{\Omega}/cm^2$, respectively. Those of ITO/Au/ITO-multi-layers depended on Au-interlayer-thickness, which were in the range of $3.6{\times}10^{19}{\sim}4.2{\times}10^{21}/cm^3$, $43{\sim}85cm^2$/Vs, $0.17{\times}10^{-4}{\sim}25{\times}10^{-4}{\Omega}cm$, and $1.7{\sim}20{\times}{\Omega}/cm^2$, respectively. The sheet resistances of the single-layer ITO and the multi-layer ITO were 310 and $2.7{\sim}21{\Omega}/cm^2$, respectively. That of AZO/Au/AZO was $8.6{\Omega}/cm^2$, which was better than the single-layer ITO.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.05a
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• pp.219-219
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• 2009

In this study, electrochemical impedance characteristics of anodic oxide layer formed on titanium ternary alloy surface have been investigated, Titanium oxide layers were grown on Ti-29Nb-xZr(x=3, 5, 7, 10 and 15 wt%) alloy substrates using phosphoric acid electrolytes.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.10
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• pp.651-655
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• 2017

This work reports the surface morphology and transmittance of copper oxide thin films for semitransparent solar cell applications. We prepared the oxide specimens by subjecting copper thin films to an oxidation reaction at annealing temperatures ranging between $100^{\circ}C$ and $300^{\circ}C$. The color of the as-deposited specimen was red, but changed to purple at the annealing temperature of $300^{\circ}C$. The surface morphology and transmittance of the specimens were significantly dependent on the annealing temperature and thickness of the copper films. Copper oxide nanoparticles prepared from a 20-nm-thick copper film at an annealing temperature of $300^{\circ}C$ provided a maximum transmittance of 93%. The obtained optical characteristics and surface morphology suggest that copper oxide thin films prepared by an oxidation reaction can be potentially employed as color- and transmittance-adjusting layer in semitransparent thin solar cells.

• Korean Journal of Materials Research
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• v.26 no.3
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• pp.109-116
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• 2016

To achieve the fabrication of high-quality Ag-coated Cu particles through a wet chemical process, we reported herein pretreatment conditions using an ammonium-based mixed solvent for the removal of a $Cu_2O$ layer on Cu particles that were oxidized in air for 1 hr at $200^{\circ}C$ or for 3 days at room temperature. Furthermore, we discussed the results of post-Ag plating with respect to removal level of the oxide layer. X-ray diffraction results revealed that the removal rate of the oxide layer is directly proportional to the concentration of the pretreatment solvent. With the results of Auger electron spectroscopy using oxidized Cu plates, the concentrations required to completely remove 50-nm-thick and 2-nm-thick oxides within 5 min were determined to be X2.5 and X0.13. However, the optimal concentrations in an actual Ag plating process using Cu powder increased to X0.4 and X0.5, respectively, because the oxidation in powder may be accelerated and the complete removal of oxide should be tuned to the thickest oxide layer among all the particles. Back-scattered electron images showed the formation of pure fine Ag particles instead of a uniform and smooth Ag coating in the Ag plating performed after incomplete removal of the oxide layer, indicating that the remaining oxide layer obstructs heterogeneous nucleation and plating by reduced Ag atoms.

• Journal of the Korean institute of surface engineering
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• v.47 no.4
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• pp.155-161
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• 2014

The present work is concerned with the formation behavior of anodic oxide films on Al7075 alloy under a galvanostatic condition in 20 vol.% sulfuric acid solution. The formation behaviour of anodic oxide films was studied by the analyses of voltage-time curves and observations of colors, morphologies and thicknesses of anodic films with anodization time. Hardness of the anodic oxide films was also measured with anodization time and at different positions in the anodic films. Six different stages were observed with anodiziation time : barrier layer formation (stage I), pore formation (stage II), growth of porous films (stage III), abnormal rapid oxide growth (stage IV), growth of non-uniform oxide films (stage V) and breakdown of the thick oxide films under high anodic voltages (stage VI). Hardness of the anodic oxide films appeared to decrease with increasing anodization time and with the position towards the outer surface. This work provides useful information about the thickness, uniformity, imperfections and hardness distribution of the anodic oxide films formed on Al7075 alloy in sulfuric acid solution.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.308-309
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• 2016

Reducing surface recombination is a critical factor for high efficiency silicon solar cells. The passivation process is for reducing dangling bonds which are carrier. Tunnel oxide layer is one of main issues to achieve a good passivation between silicon wafer and emitter layer. Many research use wet-chemical oxidation or thermally grown which the highest conversion efficiencies have been reported so far. In this study, we deposit ultra-thin tunnel oxide layer by PECVD (Plasma Enhanced Chemical Vapor Deposition) using $N_2O$ plasma. Both side deposit tunnel oxide layer in different RF-power and phosphorus doped a-Si:H layer. After deposit, samples are annealed at $850^{\circ}C$ for 1 hour in $N_2$ gas atmosphere. After annealing, samples are measured lifetime and implied Voc (iVoc) by QSSPC (Quasi-Steady-State Photo Conductance). After measure, samples are annealed at $400^{\circ}C$ for 30 minute in $Ar/H_2$ gas atmosphere and then measure again lifetime and implied VOC. The lifetime is increase after all process also implied VOC. The highest results are lifetime $762{\mu}s$, implied Voc 733 mV at RF-power 200 W. The results of C-V measurement shows that Dit is increase when RF-power increase. Using this optimized tunnel oxide layer is attributed to increase iVoc. As a consequence, the cell efficiency is increased such as tunnel mechanism based solar cell application.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.252-253
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• 2011

ZnO-based thin film transistors (TFTs) are of great interest for application in next generation flat panel displays. Most research has been based on amorphous indium-gallium-zinc-oxide (IGZO) TFTs, rather than single binary oxides, such as ZnO, due to the reproducibility, uniformity, and surface smoothness of the IGZO active channel layer. However, recently, intrinsic ZnO-TFTs have been investigated, and TFT- arrayss have been demonstrated as prototypes of flat-panel displays and electronic circuits. However, ZnO thin films have some significant problems for application as an active channel layer of TFTs; it was easy to change the electrical properties of the i-ZnO thin films under external conditions. The variable electrical properties lead to unstable TFTs device characteristics under bias stress and/or temperature. In order to obtain higher performance and more stable ZnO-based TFTs, HZO thin film was used as an active channel layer. It was expected that HZO-TFTs would have more stable electrical characteristics under gate bias stress conditions because the binding energy of Hf-O is greater than that of Zn-O. For deposition of HZO thin films, Hf would be substituted with Zn, and then Hf could be suppressed to generate oxygen vacancies. In this study, the fabrication of the oxide-based TFTs with HZO active channel layer was reported with excellent stability. Application of HZO thin films as an active channel layer improved the TFT device performance and bias stability, as compared to i-ZnO TFTs. The excellent negative bias temperature stress (NBTS) stability of the device was analyzed using the HZO and i-ZnO TFTs transfer curves acquired at a high temperature (473 K).

• Korean Journal of Materials Research
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• v.12 no.9
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• pp.718-723
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• 2002

$Ti_{1-x}$ $Al_{ x}$N thin films as barrier layer for memory devices application were deposited by reactive magnetron sputtering. The crystallinity, micro-structure, oxidation resistance and oxidation mechanism of films were investigated as a function of Al content. Lattice parameter and grain size of thin films were decreased with increasing the Al content Oxidation of the film with higher Al content is slow and then, total oxide thickness is thinner than that of lower Al content film. Oxide layer formed on the surface is AlTiNO layer. Oxidation of $Ti_{1-x}$ /$Al_{x}$ N barrier layer is diffusion limited process and thickness of oxide layer with oxidation time increased with a parabolic law. The activation energy of oxygen diffusion, Ea and diffusion coefficient, D of $Ti_{0.74}$ /X$0.74_{0.26}$N film is 2.1eV and $10^{-16}$ ~$10^{-15}$ $\textrm{cm}^2$/s, respectively. $_Ti{1-x}$ /$Al_{x}$ XN barrier layer showed good oxidation resistance.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.317.2-317.2
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• 2013

Ultrathin oxide encapsulated metal-oxide hybrid nanocatalysts have been fabricated by a soft chemical and facile route. First, SiO2 nanoparticles of 25~30 nm size have been synthesized by modified Stobber's method followed by amine functionalization. Metal nanoparticles (Ru, Rh, Pt) capped with polymer/citrate have been deposited on functionalized SiO2 and finally an ultrathin layer of TiO2 coated on surface which prevents sintering and provides high thermal stability while maximizing the metal-oxide interface for higher catalytic activity. TEM studies confirmed that 2.5 nm sized metal nanoparticles are well dispersed and distributed throughout the surface of 25 nm SiO2 nanoparticles with a 3-4 nm TiO2 ultrathin layer. The metal nanoparticles are still well exposed to outer surface, being enabled for surface characterization and catalytic activity. Even after calcination at $600^{\circ}C$, the structure and morphology of hybrid nanocatalysts remain intact confirm the high thermal stability. XPS spectra of hybrid nanocatalyst suggest the metallic states as well as their corresponding oxide states. The catalytic activity has been evaluated for high temperature CO oxidation reaction as well as photocatalytic H2 generation under solar simulation. The design of hybrid structure, high thermal stability, and better exposure of metal active sites are the key parameters for the high catalytic activity. The maximization of metal-TiO2 interface interaction has the great role in photocatalytic H2 production.