• Journal of Surface Science and Engineering
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• v.22 no.4
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• pp.215-220
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• 1989

Silicon Nitride whose thickness is about $100\AA$by the ellipsometer was successfully formed by the Plasma reaction. Nitrogen Plasma was formed by applying the 200KHz, 500Watt power between the two electroes and nitridation of silicon was carried out directly on the top of the silicon wafer. Thus Silicon Nitride formed was oxidized to from oxynitrides and their electrical characterlstice were analyzed by measuring I-V curves and capacitances. Through ESCA depth profiles, the chemical composition changes before and after the oxidation wers analyzed.

• Korean Journal of Materials Research
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• v.22 no.10
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• pp.539-544
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• 2012

We have grown AlN nanorods and AlN films using plasma-assisted molecular beam epitaxy by changing the Al source flux. Plasma-assisted molecular beam epitaxy of AlN was performed on c-plane $Al_2O_3$ substrates with different levels of aluminum (Al) flux but with the same nitrogen flux. Growth behavior of AlN was strongly affected by Al flux, as determined by in-situ reflection high energy electron diffraction. Prior to the growth, nitridation of the $Al_2O_3$ substrate was performed and a two-dimensionally grown AlN layer was formed by the nitridation process, in which the epitaxial relationship was determined to be [11-20]AlN//[10-10]$Al_2O_3$, and [10-10]AlN//[11-20]$Al_2O_3$. In the growth of AlN films after nitridation, vertically aligned nanorod-structured AlN was grown with a growth rate of $1.6{\mu}m/h$, in which the growth direction was <0001>, for low Al flux. However, with high Al flux, Al droplets with diameters of about $8{\mu}m$ were found, which implies an Al-rich growth environment. With moderate Al flux conditions, epitaxial AlN films were grown. Growth was maintained in two-dimensional or three-dimensional growth mode depending on the Al flux during the growth; however, final growth occurred in three-dimensional growth mode. A lowest root mean square roughness of 0.6 nm (for $2{\mu}m{\times}2{\mu}m$ area) was obtained, which indicates a very flat surface.

• Journal of the Korean Electrochemical Society
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• v.18 no.2
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• pp.45-50
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• 2015

In the present work, to increase the chemical stability of the lithium-ion-conducting ceramic electrolyte ($Li_{1+x+y}Al_xTi_{2-x}Si_yP_{3-y}O_{12}$, LATP) in the strong alkaline solution, the surface of LATP was modified by the nitridation process. The surface and structural properties of nitride LATP solid electrolyte were characterized by X-ray diffraction, X-ray photoelectron spectrometer and scanning electron microscopy and ac-impedance spectroscopy, which were correlated to the chemical stability and electrochemical performance of LATP. The nitrided LATP immersed in the alkaline solution for 30 days exhibits the enhanced chemical stability than the pristine LATP. Moreover, a rechargeable hybrid Li-air battery constructed with the nitrided LATP solid electrolyte shows considerably reduced discharge-charge voltage gaps (enhanced the round-trip efficiency) in comparison to the cell constructed with pristine LATP, which indicate that the surface nitridation process can be the efficient way to improve the chemical stability of solid electrolyte in alkaline media.

• Journal of the Korean Vacuum Society
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• v.6 no.4
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• pp.354-358
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• 1997

Crystal properties of wurtzite GaN films grown on $Al_2O_3$(0001) substrates under various nitrogen pressure and plasma power by electron cyclotron resonance molecular beam epitaxy were investigated by full width at half maximum of X-ray diffraction peak and scanning electron microscope. It was found that the nitrogen pressure has a large effect on the FWHM value of XRD, and the GaN film grown under the optimum nitrogen pressure contains high density of dislocations. These results suggest that the crystal quality is sensitive to the plasma source conditions and that the relaxation of stress depends of V/III ratio. However, substrate-surface nitridation has little effect on the relaxation of misfit stress.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.2
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• pp.150-155
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• 2004

This study attempts to form a TiN barrier layer against Cu diffusion by the easier and more convenient method. In this new approach, Ti was sputter-deposited, and nitrided by heat-treating in the NH$_3$ambient. Sheet resistance of as-deposited Ti was 20 Ω/$\square$, but increased to 195 Ω/$\square$ after the heat-treatment at 30$0^{\circ}C$, and lowered to 120 Ω/$\square$ after the heat-treatment at 50$0^{\circ}C$, and $600^{\circ}C$. AES results for these thin films confirmed that the atomic ratio of Ti and N was close to 1:1 at or above 40$0^{\circ}C$ heat-treatment. However, it was also found that excessive oxygen was contained in the TiN layer. To examine the barrier property against Cu diffusion, 100nm Cu was deposited on the TiN layer and then annealed at 40$0^{\circ}C$ for 40 min.. Cu remained at the surface without diffusing into the Si layer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.2
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• pp.147-152
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• 2002

Carbon nitride thin films were deposited by reactive sputtering for the hard coating materials on Si wafer and tool steels. When the nitrogen content of carbon nitride film on tool steel is 33.4%, the mean hardness and elastic modulus are 49.34 GPa and 307.2 GPa respectively. The nitrided or carburised surface acts as the diffusion barrier which shows better adhesion of carbon nitride thin film on the steel surface. To prevent nitrogen diffusion from the film, steel substrate can be saturated by nitrogen forming a Fe$_3$N layer. The desirable structure at the surface after carburising is martensite, but sometimes, due to high carbon content an proeutectoid Fe$_3$C structure may form at the grain boundaries, leaving the overall surface brittle and may cause defects.

• Journal of the Korean Ceramic Society
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• v.29 no.5
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• pp.347-356
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• 1992

Various kaolin samples with different alumina content were prepared from calcined admixture of kaolin and ammonium sulfate by varying the treatment time in sulfuric acid. Samples were nitridated under N2 or N2-H2 atmosphere with changing the amount of added carbon, the reaction time and temperature. As the alumina content lowered, the size of kaolin particles decreased and the specific surface area increased. XRD analysis indicated that ${\alpha}$-quartz remained by decomposition of halloysite and meta-halloysite. Experimental results of nitridation behavior are summerized as follows; 1) Nitridation under N2 atmosphere. With the increase of C/SiO2 ratio and with the decrease of Al2O3 content, disappearance of XRD pattern peaks of mullite, ${\alpha}$-quartz and ${\alpha}$-Al2O3 were accelerated at 1300$^{\circ}C$. SiC was the main phase in the reaction product of acid-treated kaolin samples nitridated at 1300$^{\circ}C$ for 10 hours regardless of C/SiO2 ratio. But the XRD peak intensities of ${\beta}$-Si3N4, ${\beta}$-sialon and SiC did not show much difference when untreated raw kaolin was fired at the same condition. When the ratio of C/SiO2 was 3.5, ${\beta}$-sialon and ${\beta}$-Si3N4 existed in the reaction product of about 22% alumina containing kaolin sample fired at 1350$^{\circ}C$ for 7 hours. Only ${\beta}$-sialon existed in the same sample fired at 1400$^{\circ}C$ for 10 hours. ${\beta}$-sialon was obtained from all of the acid-treated kaolin samples fired at 1400$^{\circ}C$ for 40 hours, but AlN and SiC remained in the untreated kaolin sample. Z value of the ${\beta}$-sialon obtained from the 22% alumina containing kaolin sample fired at 1400$^{\circ}C$ for 40 hours was about 1.3(XRD) and 1.5(EDS). 2) Nitridation under 80N2+2OH2 mixed gas atmosphere with the C/SiO2 ratio of 1 Mullite was not found, but ${\alpha}$-Si3N4, and ${\beta}$-sialon were present in the reaction product of about 22% alumina containing kaolin sample fired at 1300$^{\circ}C$ for 10 hours. When untreated kaolin sample was nitridated at the same condition, mullite remained. AlN and SiC were not found in the reaction product of about 22% alumina containing kaolin sample fired at 1350$^{\circ}C$ for 5 hours. On the other hand, AlN and SiC remained in the product of untreated kaolin fired at the same condition.

• Journal of the Korean Ceramic Society
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• v.28 no.12
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• pp.961-968
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• 1991

The nature and composition of the surfaces of silicon nitride and β-Sialon powders were investigated using high voltage and high resolution transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). β-Sialon powder was produced from Hadong kaolin by the carbothermic reduction and simultaneous nitridation. XPS showed that Al was contained in the surface of β-Sialon powder besides Si, N and O components, which is different from that of silicon nitride. It was supposed that Al in the surface of β-Sialon was bonded with oxygen from the oxygen-nitrogen ratio and the measurement of Al 2p binding energies. After both silicon nitride and β-Sialon powders were oxidized at 800℃ for 24h in air, nitrogen didn't exist in the surfaces and the depth of the oxide layer increased. The measurement of Si 2p binding energies showed that the chemical shifts occurred from Si3N2O and/or Si2N2O to SiO2 phase.

• Journal of the Korean Vacuum Society
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• v.7 no.s1
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• pp.85-99
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• 1998

A ultrahigh vacuum chemical vapor deposition(UHVCVD)/metalorganic chemical vapor deposition(MOMBE) system equipped with a radio frequency(RF)-plasma cell was employed to grow GaN layer on the sapphire at a low temperature. The x-ray photoelectron spectroscopy analysis of nitrogen composition on the nitridated sapphite surface indicated that a nitridation process is mostly affected by the RF power at low temperature. Atomic force microscope images of nitridated surface the protrusion density on the nitridated sapphire is dependent on the nitridation temperature. The crystallinity of GaN grown at $450^{\circ}C$ was found to be much improved when the sapphire was nitridated at low temperature prior to the GaN layer growth. Moreover, a strong photoluminescence spectrum of GaN grown by UHVCVD/MOMBE with a rf-nitrogen plasma was observed for the first time at room temperature.

• Electrical & Electronic Materials
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• v.10 no.7
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• pp.706-712
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• 1997

AlN(Aluminium Nitride) thin films were prepared using by RF sputtering method on the Si(100) and Si(111) substrates as the parameters of the substrate temperature, RF power, sputtering duration and the $N_2$/Ar ratio and investigated by X-ray diffraction, IR spectrometry, n&k analyzer. For the Si(100) substrate, the AlN thin films of (101) orientation were obtained under the conditions of room temperature and the nitrogen of 60 vol.%. For the Si(111) substrate, the (002) AlN thin films were obtained under the nitrogen of 100 vol.%. In case of the thin film prepared in the condition of above 60 vol.% of the nitrogen, the average value of the surface roughness of the film was 151$\AA$. From the changes of the half widths of E$_1$[TO] phonon bands at the wavenumber of 680$cm^{-1}$ /, it were compared of the crystallinities of the films which were grown under the different conditions. The thicknesses of AlN films were decreased dramatically in the region of the nitrogen of 40~60 vol.%. Its due to the nitridation of the Al target surface and getting low of the sputtering yield by the $N_2$/Ar ratio being increased.