• Title/Summary/Keyword: Surface leakage

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Effect of electron-beam irradiation on leakage current of AlGaN/GaN HEMTs on sapphire

  • Oh, Seung Kyu;Song, Chi Gyun;Jang, Taehoon;Kwak, Joon Seop
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.13 no.6
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    • pp.617-621
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    • 2013
  • This study examined the effect of electron-beam (E-beam) irradiation on the electrical properties of n-GaN, AlGaN and AlGN/GaN structures on sapphire substrates. E-beam irradiation resulted in a significant decrease in the gate leakage current of the n-GaN, AlGaN and HEMT structure from $4.0{\times}10^{-4}A$, $6.5{\times}10^{-5}A$, $2.7{\times}10^{-8}A$ to $7.7{\times}10^{-5}A$, $7.7{\times}10^{-6}A$, $4.7{\times}10^{-9}A$, respectively, at a drain voltage of -10V. Furthermore, we also investigated the effect of E-beam irradiation on the AlGaN surface in AlGaN/GaN heterostructure high electron mobility transistors(HEMTs). The results showed that the maximum drain current density of the AlGaN/GaN HEMTs with E-beam irradiation was greatly improved, when compared to that of the AlGaN/GaN HEMTs without E-beam irradiation. These results strongly suggest that E-beam irradiation is a promising method to reduce leakage current of AlGaN/GaN HEMTs on sapphire through the neutralization the trap.

Flow Characteristics of Wake Flow with Relation to a Tip Leakage Vortex at Different Flow Rates in an Axial Flow Fan (유량에 따른 축류홴의 익단누설와류 및 후류 특성)

  • Kim Kwang-Yong;Jang Choon-Man
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.29 no.3 s.234
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    • pp.322-329
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    • 2005
  • The flow characteristics in the blade passage and in the wake region of a low speed axial flow fan have been investigated by experimental analysis using a rotating hot-wire sensor for design and off-design operating conditions. The results show that the tip leakage vortex is moved upstream when flow rate is decreased, thus disturbing the formation of wake flow near the rotor tip. The tip leakage vortex interfaces with blade pressure surface, and results in high velocity fluctuation near the pressure surface. From axial velocity distributions downstream of the fan rotor, large axial velocity decay near the rotor tip is observed at near stall condition, which results in large blockage compared to that at the design condition. Although the wake flow downstream of the rotor blade is clearly measured at all operating conditions, the trough of the high velocity fluctuation due to Karmann vortex street in the wake flow is mainly observed at a higher flow condition than the design flow rate.

PACVD of Plasma Polymerized Organic Thin Films and Comparison of their Electrochemical Properties

  • I.S. Bae;S.H. Cho;Kim, M.C.;Y.H. Roh;J.H. Boo
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2003.05a
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    • pp.53-53
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    • 2003
  • Plasma polymerized organic thin films were deposited on Si(100) glass and metal substrates using thiophene and ethylcyclohexane precursors by PECVD method. In order to compare electrochemical properties of the as-grown thin films, the effects of the RF plasma power in the range of 30~100 W. AFM showed that the polymer films with smooth surface and sharp interface could be grown under various deposition conditions. Impedance analyzer was utilized for the determination of I-V curve for leakage current density and C-V for dielectric constants, respectively. To obtain C-V curve, we used a MIM structure of metal(Al)-insulator(plasma polymerized thin film)-metal(Pt) structure. Al as the electrode was evaporated on the thiophene films that grew on Pt coated silicon substrates, and the dielectric constants of the as-grown films were then calculated from C- V data measured at 1MHz. From the electrical property measurements such as I-V and C-V characteristics, the minimum dielectric constant and the best leakage current of thiophene thin films were obtained to be about 3.22 and $1{\;}{\times}10^{-11}{\;}A/cm^2$. However, in case of ethylcyclohexane thin films, the minimum dielectric constant and the best leakage current were obtained to be about 3.11 and $5{\;}{\times}10^{-12}{\;}A/cm^2$.

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Effects of Deposition Pressure on the Phase Formation and Electrical Properties of BiFeO3 Films Deposited by Sputtering

  • Park, Sang-Shik
    • Korean Journal of Materials Research
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    • v.19 no.11
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    • pp.601-606
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    • 2009
  • $BiFeO_3$ (BFO) thin films were prepared on $Pt/TiO_2/Si$ substrate by r.f. magnetron sputtering. The effects of deposition pressure on electrical properties were investigated using measurement of dielectric properties, leakage current and polarization. When BFO targets were prepared, Fe atoms were substituted with Mn 0.05% to increase electrical resistivity of films. (Fe+Mn)/Bi ratio of BFO thin films increases with increasing partial pressure of $O_2$ gas. The deposited films showed the only BFO phase at 10 mTorr, the coexistence of BFO and $Bi_2O_3$ phase at 30-50 mTorr, and the only $Bi_2O_3$ phase at 70 mTorr. The crystallinity of BFO films was reduced due to the higher Bi contents and the decrease of surface mobility of atoms at high temperature. The porosity and surface roughness of films increased with the increase of the deposition pressure. The films deposited at high pressure showed low dielectric constant and high leakage current. The dielectric constant of films deposited at various deposition pressures was 84${\sim}$153 at 1 kHz. The leakage current density of the films deposited at 10${\sim}$70 mTorr was about $7{\times}10.6{\sim}1.5{\times}10.2A/cm^2$ at 100 kV/cm. The leakage current was found to be closely related to the morphology and composition of the BFO films. BFO films showed poor P-E hysteresis loops due to high leakage current.

Leakage Current of Capacitive BST Thin Films (BST 축전박막의 누설전류 평가)

  • 인태경;안건호;백성기
    • Journal of the Korean Ceramic Society
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    • v.34 no.8
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    • pp.803-810
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    • 1997
  • Ba0.5Sr0.5TiO3 thin films were deposited by RF magnetron sputliring method in order to clarify the anneal condition and doping effect on loakage current Nb and Al were selected as electron donor and acceptor dopants respectively, in the BST films because they have been known to have nearly same ionic radii as Ti and thought to substitute Ti sites to influence the charge carrier and the acceptor state adjacent to the gram boundary. BST thin films prepared in-situ at elevated temperature showed selatively high leakage current density and low breakdown voltage. In order to achieve smooth surface and to improve electrical properties, BST thin films were deposited at room temperature and annealed at elevated temperature. Post-annealed BST thin films showed smoother surface morphology and lower leakage current density than in-situ prepared thin films. The leakage current density of Al doped thin films was measured to be around 10-8A/cm2, which is much lower than those of undoped and Nb doped BST films. The result clearly demonstrates that higher Schottky barrier and lower mobile charge carrier concentration achieved by annealing in the oxygen atmosphere and by Al doping are desirable for reducing leakage current density in BST thin films.

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Experimental Study on the Safety of a Valve for a Special Gas Cylinder (특수가스용기용 밸브의 안전성에 관한 실험적 연구)

  • Kim, Chung Kyun
    • Journal of the Korean Institute of Gas
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    • v.17 no.3
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    • pp.14-19
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    • 2013
  • This paper presents an experimental study on the safety of a valve for a special gas cylinder. The test valves that were randomly dismantled from the special gas cylinder were experimented on the gas leakage and operation safeties. The crack, wear and deformation of the valve body, screw thread, safety disk, vent hole, stem and handle components that may affect to the gas leakage safety of a used valve were not found in this experimental study. A painted handle of a valve was partly stripped from the coated surface, and the surface of PT screw of a used valve body was rusted. But, these paint and rust problems do not affected to the gas leakage safety of used valves. And there was no gas leakage in the dismantled valve, and the permanent deformation and partial scars of a valve stem and O-rings were observed on the rubbing surfaces. Thus, the valve seat and O-rings are recommended to be replaced for a gas leakage safety of a dismantled valve. And it is necessary to repair and inspect handle fastening forces for a safe opening and closing operations of a valve.

A COMPARATIVE STUDY ON THE APICAL LEAKAGE OF RETROFILLING AFTER APICAL CAVITY PREPARATION WITH ULTRASONIC INSTRUMENT (초음파 기구에 의한 치근단 와동형성후 역충전의 밀폐성에 대한 연구)

  • Lee, Hyeong-Il;Son, Ho-Hyun
    • Restorative Dentistry and Endodontics
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    • v.18 no.1
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    • pp.197-204
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    • 1993
  • This study was conducted to evaluate and compare the apical leakage in the following retrofilling techniques after apical resection; No apical cavity preparation and no retrofilling(control group), Amalgam(group I) or silver glass ionomer cement(group II) retrofilling after apical cavity preparation with mini contra-angle and bur, Amalgam(group III) or silver glass ionomer cement(group N) retrofilling after apical cavity preparation with ultrasonic micro endo tip. Extracted ninety upper anterior and lower canine teeth were fixed in skull simulators and root canals were prepared with step-back method and obturated with gutta-percha and zinc oxide eugenol sealer. Obturated roots were resected 2mm from apical ends and apical cavities of 1mm width and 2mm depth were prepared and retrofilled by above mentioned methods. After application of nail varnish on all surface except resected surface, apical 1/3 of the roots were placed in 1% methylene blue solution for 3 days. After longutudinal sectioning to expose central parts of filled materials, depths of penetrated dye were measured by measuring microscope and were analyzed statistically. The results were as follows. 1. Having no relation with instruments used in apical cavity preparation, amalgam retrofilling groups(group I and II) showed less apical leakage which was not significant statistically than no retrofilling group(control group) (P<0.05), but silver glass ionomer cement retrofilling gruoups(group II and IV) showed significantly less apical leakage than no retrofilling group(control group) (P<0.01). 2. In the groups retrofilled with the same material, the apical leakage in cavities prepared with ultrasonic micro endo tip (group III and IV) was less than that in cavities prepared with mini contra-angle and bur(group I and II), but not significant statistically(P>0.05). 3. When apical cavities were prepared with same instrument. the egroups retrofilled with silver glass ionomer cement(group II and IV) showed significantly less apical leakage than the groups retrofilled with amalgam(group I and III)(<0.01).

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Tip Leakage Flow on the Transonic Compressor Rotor (천음속 회전익에서의 누설유동)

  • Park, Jun-Young;Chung, Hee-Taeg;Baek, Je-Hyun
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.27 no.1
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    • pp.84-94
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    • 2003
  • It is known that tip clearance flows reduce the pressure rise, flow range and efficiency of the turbomachinery. So, the clear understanding about flow fields in the tip region is needed to efficiently design the turbomachinery. The Navier-Stokes code with the proper treatment of the boundary conditions has been developed to analyze the three-dimensional steady viscous flow fields in the transonic rotating blades and a numerical study has been conducted to investigate the detail flow physics in the tip region of transonic rotor, NASA Rotor 67. The computational results in the tip region of transonic rotors show the leakage vortices, leakage flow from pressure side to suction side and their interaction with a shock. Depen ding on the operating conditions, toad distributions and the position of shock-wave on the blade surface are very different close to the blade tip of the transonic compressor rotor. The load distribution and the shock-wave position close to the blade tip had the close relationship with the starting position of leakage vortex and the direction of leakage flow.

Effects of Low Temperature Annealing at Various Atmospheres and Substrate Surface Morphology on the Characteristics of the Amorphous $Ta_2O_5$ Thin Film Capacitors (여러 분위기에서의 저온 열처리와 폴리머 기판의 표면 morphology가 비정질 $Ta_2O_5$ 박막 커패시터의 특성에 미치는 영향)

  • Jo, Seong-Dong;Baek, Gyeong-Uk
    • Korean Journal of Materials Research
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    • v.9 no.5
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    • pp.509-514
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    • 1999
  • Interest in the integrated capacitors, which make it possible to reduce the size of and to obtain improved electrical performance of an electronic system, is expanding. In this study, $Ta_2$O\ulcorner thin film capacitors for MCM integrated capacitors were fabricated on a Upilex-S polymer film by DC magnetron reactive sputtering and the effects of low temperature annealing at various atmospheres and substrate surface morphology on the capacitor characteristics were discussed. The low temperature($150^{\circ}C$) annealing produced improved capacitor yield irrespective of the annealing at mosphere. But the leakage current of the $O_2$-annealed film was larger than that of any other films. This is presumably mosphere. But the leakage current of the $O_2$-annealed film was larger than that of any other films. This is presumably due to the change of the $Ta_2$O\ulcorner film surface by oxygen, which was explained by conduction mechanism study. Leakage current and breakdown field strength of the capacitors fabricated on the Upilex-S film were 7.27$\times$10\ulcornerA/$\textrm{cm}^2$ and 1.0 MV/cm respectively. These capacitor characteristics were inferior to those of the capacitors fabricated on the Si substrate but enough to be used for decoupling capacitors in multilayer package. Roughness Analysis of each layer by AFM demonstrated that the properties of the capacitors fabricated on the polymer film were affected by the surface morphology of the substrate. This substrate effect could be classified into two factors. One is the surface morphology of the polymer film and the other is the surface morphology of the metal bottom electrode determined by the deposition process. Therefore, the control of the two factors is important to obtain improved electrical of capacitors deposited on a polymer film.

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Effect of Relative Position of Vane and Blade on Heat/Mass Transfer Characteristics on Stationary Turbine Blade Surface (베인과 블레이드 사이의 상대위치 변화에 따른 터빈 블레이드 표면에서의 열/물질전달 특성)

  • Rhee, Dong-Ho;Cho, Hyung Hee
    • 유체기계공업학회:학술대회논문집
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    • 2004.12a
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    • pp.140-150
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    • 2004
  • In this study, the effect of relative position of the blade for the fixed vane has been investigated on blade surface heat transfer. The experiments were conducted in a low speed stationary annular cascade, and heat transfer of blade was examined for six positions within a pitch. Turbine test section has one stage composed of sixteen guide vanes and blades. The chord length of the tested blade is 150 mm and the mean tip clearance of the blade having flat tip is about $2.5\%$ of the blade chord. For the detailed mass transfer measurements on the blade surfaces, a naphthalene sublimation technique was used. The inlet flow Reynolds number is fixed to $1.5{\times}10^5$. Complex heat transfer characteristics are observed on the blade surface due to various flow characteristics, such as separation bubble, relaminarization, transition to turbulence and leakage vortices. The distributions of velocity and turbulence intensity change significantly with the relative position due to the blockage effect of the blade. This causes the variation of heat transfer patterns on the blade surface. The results show that the flow near the leading edge get highly disturbed and deflected toward the either side of the blade when the blade leading edge is positioned close to the trailing edge of the vane. Therefore, separation bubble disappears on the pressure side and overall heat transfer on the relaminarization region is increased. But, due to reduced tip gap flow at the upstream region, the effect of leakage flow on the upstream region of the blade surface is weakened. Thus, the heat transfer characteristics significantly change with the blade positions.

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