JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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Effect of electron-beam irradiation on leakage current of AlGaN/GaN HEMTs on sapphire

  • Oh, Seung Kyu (Department of Printed Electronics Engineering, Sunchon National University) ;
  • Song, Chi Gyun (Department of Printed Electronics Engineering, Sunchon National University) ;
  • Jang, Taehoon (IGBT team, LG Electronics) ;
  • Kwak, Joon Seop (Department of Printed Electronics Engineering, Sunchon National University)
  • Received : 2012.04.30
  • Accepted : 2013.10.07
  • Published : 2013.12.31
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Abstract

This study examined the effect of electron-beam (E-beam) irradiation on the electrical properties of n-GaN, AlGaN and AlGN/GaN structures on sapphire substrates. E-beam irradiation resulted in a significant decrease in the gate leakage current of the n-GaN, AlGaN and HEMT structure from $4.0{\times}10^{-4}A$, $6.5{\times}10^{-5}A$, $2.7{\times}10^{-8}A$ to $7.7{\times}10^{-5}A$, $7.7{\times}10^{-6}A$, $4.7{\times}10^{-9}A$, respectively, at a drain voltage of -10V. Furthermore, we also investigated the effect of E-beam irradiation on the AlGaN surface in AlGaN/GaN heterostructure high electron mobility transistors(HEMTs). The results showed that the maximum drain current density of the AlGaN/GaN HEMTs with E-beam irradiation was greatly improved, when compared to that of the AlGaN/GaN HEMTs without E-beam irradiation. These results strongly suggest that E-beam irradiation is a promising method to reduce leakage current of AlGaN/GaN HEMTs on sapphire through the neutralization the trap.

Keywords

References

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