• Proceedings of the Korean Society of Crop Science Conference
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• 1995.10a
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• pp.62-63
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• 1995

• Proceedings of the Korean Society of Crop Science Conference
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• 1995.10a
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• pp.60-61
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• 1995

• Journal of the Korean institute of surface engineering
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• v.37 no.2
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• pp.80-85
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• 2004

Chromium-carbon (Cr-C) and chromium-carbon-phosphorus (Cr-C-P) alloy deposits using trivalent chromium sulfate baths containing potassium formate were prepared to study their current efficiency, hardness change and phase transformations behavior with heat treatment, respectively. The current efficiencies of Cr-C and Cr-C-P alloy deposits increase with increasing current density in the range of 15-35 A/dm$^2$. Carbon content of Cr-C and phosphorous of Cr-C-P layers decreases with increasing current density, whereas, the carbon content of Cr-C-P layer is almost constant with the current density. Cr-C deposit shows crystallization at $400^{\circ}C$ and has (Cr+Cr$_{ 23}$$C_{6}$) phases at $800^{\circ}C$. Cr-C-P deposit shows crystallization at $600^{\circ}C$ and has (Cr+Cr$_{23}$ $C_{6}$$+Cr_3$P) phases at $800^{\circ}C$. The hardness of Cr-C and Cr-C-P deposits after heating treatment for one hour increase up to Hv 1640 and Hv 1540 and decrease about Hv 820 and Hv 1270 with increasing annealing temperature in the range of $400～^{\circ}C$, respectively. The hardness change with annealing is due to the order of occurring of chromium crystallization, precipitation hardening effect, softening and grain growth with temperature. Less decrease of hardness of Cr-C-P deposit after annealing above $700^{\circ}C$ is related to continuous precipitation of $Cr_{23}$ $C_{6}$ and $Cr_3$P phases which retard grain growth at the temperature.

• Journal of the Korean institute of surface engineering
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• v.38 no.1
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• pp.7-13
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• 2005

Bismuth thin films were prepared on glass substrate with RF magnetron sputtering and effects of substrate temperature on surface morphology and their electrical transport properties were investigated. Grain growth of bismuth after nucleation and the onset of coalescense of grains at 393 K were observed with field emission secondary electron microscopy. Continuous thin films could not be obtained above 473 K because of grain segregation and island formation. Hall effect measurements showed that substrate heating yields the decrease of carrier density and the increase of mobility. Resistivity of bismuth film has its minimum (about 0.7 x 10/sup -3/ Ωcm) in range of 403～433 K. Annealing of bismuth films deposited at room temperature was carried out in a radiation furnace with flowing hydrogen gas. The change of resistivity was not significant due to cancellation of the decrease of carrier density and the increase of mobility. The abrupt change of electrical properties of film annealed above 523 K was found to be caused by partial oxidation of bismuth layer in x-ray diffraction analysis.

• Applied Science and Convergence Technology
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• v.24 no.5
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• pp.142-150
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• 2015

A failure analysis of tungsten filaments used in quadrupole mass spectrometer for plasma process monitoring was carried by using SEM and EDS. Failed at high temperature, filaments showed two kinds of failure modes. The one is that diameter of filament became thinner gradually and finally snapped. The other is that filament abruptly snapped almost at a right angle. The EDS analysis showed Fe and C, including W and Fe, on the surface of failed filament. when failed filaments were treated with plasma in mixture of Ar and $CF_4$, the amount of Fe and C decreased. The failure analysis of filament showed that the cause of filament failure is thermal evaporation and grain growth of tungsten at high temperature.

• Journal of Powder Materials
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• v.5 no.1
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• pp.35-41
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• 1998

The effect of Mn on the densification and the microstructural change in W heavy alley was investigated with adopting the improved Mn-adding method. In order to avoid the pore formation problems associated with Mn powder mixing to the other constituent powders, Mn was added afterwards to the sintered heavy alloy; Mn powder was spread homogeneously on the surface of the sintered heavy alloy compact, and this Mn powder contained specimen was resintered at the same sintering temperature. As expected, the resintered specimen showed the pore free microstructure because Mn was reduced separately from the other constituent elements. It was also founded that W grains grew rapidly at the initial stage of resintering treatment due to the activated reprecipitation of the excess W atoms substituted by Mn atoms, but the growth rate of W grains was slowly lowered with the prolonged sintering time, especially, compared to the Mn free heavy alloy. Such a retardation of grain growth should be attributed to the decreased W solubility in the Mn contented matrix phase. Furthermore, Mn addition resulted in the decrease of contiguity by improving the wetting between matrix phase and W grain.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.466-467
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• 2006

The anatase particle was facetted at the free surface and a neck formation between the anatase particles prior to the phase transformation occured. This resulted in the severe lattice distortion at the region of the interface near the neck and this can act as the nucleation sites for the phase transformation. The grain growth of rutile particles after the phase transformation grew very fast by the sweeping phenomena of grain boundary. Therfore, It leaded to the microstructure without the rutile phase located in anatase particle.

• Korean Journal of Materials Research
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• v.17 no.11
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• pp.618-621
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• 2007

Chromium nitride (CrN) films were deposited on silicon substrate by RF magnetron sputtering assisted by inductive coupled nitrogen plasma without intentional substrate heating. Films were deposited with different levels of bombarding energy by nitrogen ions $(N^+)$ to investigate the influence of substrate bias voltage $(V_b)$ on the growth of CrN thin films. XRD spectra showed that the crystallographic structure of CrN films was strongly affected by substrate bias voltage. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) results showed that surface roughness and grain size of the CrN films varied significantly with bias voltage. For - 80 $V_b$ depositions, the CrN films showed bigger grain sizes than those of other bias voltage conditions. The lowest surface roughness of 0.15 nm was obtained from the CrN films deposited at .130 $V_b$.

• Journal of the Korean institute of surface engineering
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• v.40 no.6
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• pp.258-261
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• 2007

Relationships between the electrical resistivity and the growth characteristic of $SnO_2$ thin films were investigated. $SnO_2$ thin films with thickness from 64 nm to 91 nm were made by controlling the RF deposition energy from 80 to 150 W. These $SnO_2$ thin films were annealed at $200^{\circ}C{\sim}700^{\circ}C$ temperature range of $100^{\circ}C$ interval in the $O_2$ gas condition. After annealing treatments, the microstructures of the $SnO_2$ thin films were changed mixed structure(amorphous & crystalline) to lamina columnar crystalline structure. Both the film thickness and the grain size were increased with increasing the local crystallization of $SnO_2$ microstructure of thin films by annealing treatment. Their electrical resistivity increased up to the annealing temperature of $400^{\circ}C$, and then slowly decreased.

• Journal of Powder Materials
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• v.10 no.6
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• pp.374-382
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• 2003

During the sintering of powder materials, many these are microstructural phenomena are caused by atomic diffusion. (1) neck formation and compact densification, (2) grain growth, i.e., growth of matrix grains and dispersed grains, (3) alloying or generation of compound, (4) generations of peculiar and hard layers near sintered compact surface, etc. The studies of the present author and co-workers on these phenomena which were carried out during 40 years are briefly introduced.