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http://dx.doi.org/10.5695/JKISE.2007.40.6.258

Growth Characteristics of SnO2 Thin Film for Gas Sensor with Annealing Treatment  

Kang, Kae-Myung (Dept. of Mater. Sci. and Engineering, Seoul National University of Technology)
Choi, Jong-Un (Dept. of Mater. Sci. and Engineering, Seoul National University of Technology)
Publication Information
Journal of the Korean institute of surface engineering / v.40, no.6, 2007 , pp. 258-261 More about this Journal
Abstract
Relationships between the electrical resistivity and the growth characteristic of $SnO_2$ thin films were investigated. $SnO_2$ thin films with thickness from 64 nm to 91 nm were made by controlling the RF deposition energy from 80 to 150 W. These $SnO_2$ thin films were annealed at $200^{\circ}C{\sim}700^{\circ}C$ temperature range of $100^{\circ}C$ interval in the $O_2$ gas condition. After annealing treatments, the microstructures of the $SnO_2$ thin films were changed mixed structure(amorphous & crystalline) to lamina columnar crystalline structure. Both the film thickness and the grain size were increased with increasing the local crystallization of $SnO_2$ microstructure of thin films by annealing treatment. Their electrical resistivity increased up to the annealing temperature of $400^{\circ}C$, and then slowly decreased.
Keywords
Tin dioxide[$SnO_2$]; Annealing; Electrical resistivity; Grain size;
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