• Proceedings of the KWS Conference
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• 2002.10a
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• pp.776-780
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• 2002

This paper describes the concept and the characteristics of hyper interfacial bonding developed as a new concept joining process for UFG (ultra-fine grained) steel. Hyper interfacial bonding process is characterized by instantaneous surface melting bonding which involves a series of steps, namely, surface heating by high frequency induction, the rapid removing of heating coil and joining by pressing specimens. UFG steels used in this study have the average grain size of 1.25 ${\mu}{\textrm}{m}$. The surface of specimen can be rapidly heated up and melted within 0.2s. Temperature gradient near heated surface is relatively steep, and peak temperature drastically fell down to about 1100K at the depth of 2~3mm away from the heated surface of specimen. Bainite is observed near bond interface, and also M-A (martensite-austenite) islands are observed in HAZ. Grain size increases with increasing heating power, however, the grain size in bonded zone can be restrained under 11 ${\mu}{\textrm}{m}$. Hardened zone is limited to near bond interface, and the maximum hardness is Hv350~Hv390.

• Korean Journal of Materials Research
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• v.24 no.10
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• pp.515-519
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• 2014

The aim of this paper is to consider the effect of annealing on the coefficient of thermal expansion (CTE) of electroplated Invar Fe-Ni alloy. The CTE of the as-electroplated alloy is lower than those of alloys annealed at $400^{\circ}C$ and $800^{\circ}C$. XRD peaks become sharper as the as-electroplated alloy is annealed, which means the grain growth. The average grain sizes of as-electroplated and as-annealed alloys at $400^{\circ}C$ and $800^{\circ}C$ are 10 nm, 70 nm, and $2{\mu}m$, respectively, as determined by TEM and EBSD analyses. The CTE variation for the various grain sizes after annealing may come from the magnetostriction effect, which generates strain due to changes in the magnetization state of the alloys. The thermal expansion coefficient is considered to be affected by nano grain size in electroplated Fe-Ni Invar alloys. As grain size decreases, ferromagnetic forces might change to paramagnetic forces. The effect of lattice vibration damping of nano grain boundaries could lead to the decrease of CTE.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.905-908
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• 2000

The growth properties of diamond grain were examined by Raman spectroscopy and microscope images. Diamond thin films were prepared on single crystal Si wafers by microwave Plasma chemical vapor deposition. Preparation conditions, substrate temperature, boron concentration and deposition time were controlled differently. Prepared diamond thin films have different surface morphology and grain size respectively Diamond grain size was gradually changed by substrate temperature. The biggest diamond grain size was observed in the substrate, which has highest temperature. The diamond grain size by boron concentration was slightly changed but morphology of diamond grain became amorphous according to increasing of boron concentration. Time was also needed to be a big diamond grain. However, time was not a main factor for being a big diamond grain. Raman spectra of diamond film, which was deposited at high substrate temperature, showed sharp peaks at 1334$cm^{-1}$ / and these were characteristics of crystalline diamond. A broad peak centered at 1550$cm^{-1}$ /, corresponding to non-diamond component (sp$^2$carbon), could be observed in the substrate, which has low temperature.

• Journal of the Korean Society for Heat Treatment
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• v.26 no.3
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• pp.105-112
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• 2013

The microstructural changes of Fe-20Mn-12Cr-1Cu alloy have been studied during high temperature gas nitriding (HTGN) at the range of $1000^{\circ}C{\sim}1150^{\circ}C$ in an atmosphere of nitrogen gas. The mixed microstructure of austenite and ${\varepsilon}$-martensite of as-received alloy was changed to austenite single phase after HTGN treatment at the nitrogen-permeated surface layer, however the interior region that was not affected nitrogen permeation remained the structure of austenite and ${\varepsilon}$-martensite. With raising the HTGN treatment temperature, the concentration and permeation depth of nitrogen, which is known as the austenite stabilizing element, were increased. Accordingly, the depth of austenite single phase region was increased. The outmost surface of HTGN treated alloy at $1000^{\circ}C$ appeared Cr nitride. And this was in good agreement with the thermodynamically calculated phase diagram. The grain growth was delayed after HTGN treatment temperature ranges of $1000^{\circ}C{\sim}1100^{\circ}C$ due to the grain boundary precipitates. For the HTGN treatment temperature of $1150^{\circ}C$, the fine grain region was shown at the near surface due to the grain boundary precipitates, however, owing to the depletion of grain boundary precipitates, coarse grain was appeared at the depth far from the surface. This depletion may come from the strong affinity between nitrogen and substitutional element of Al and Ti leading the diffusion of these elements from interior to surface. Because of the nitrogen dissolution at the nitrogen-permeated surface layer by HTGN treatment, the surface hardness was increased above 150 Hv compared to the interior region that was consisted with the mixed microstructure of austenite and ${\varepsilon}$-martensite.

• Progress in Superconductivity and Cryogenics
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• v.21 no.4
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• pp.19-23
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• 2019

A large grain YBCO bulk superconductor is fabricated by the top-seeded melt growth (TSMG) method. In the TSMG process, the seed crystal is placed on the top surface of a partially melted compact and therefore the seed crystal is frequently tilted during the melt process due to intrinsic unstable nature of Y211 particle +liquid phase mixture. In this work, we report the successful growth of single-domain YBCO bulk superconductors by a bottom-seeded melt growth (BSMG) method. Investigations on the trapped magnetic field and the microstructures of the synthesized specimens show that a bottom-seeded melt growth method has hardly affected on the crystal growth behavior, the microstructure development and the magnetic properties of the large grain YBCO bulk superconductors. The bottom-seeded melt growth method is clearly beneficial for the stable control of seed orientation through the melt process for the fabrication of a large grain YBCO bulk superconductor.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.5
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• pp.441-447
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• 2003

When a SnO$_2$ thin film was deposited by thermal CVD, two different types of growth behavior that were dependent on the deposition temperature were observed. The film grown at 475$^{\circ}C$ had a wide grain size distribution and a faceted surface shape. On the other hand, the film grown at 5$25^{\circ}C$ had a relatively narrow grain size distribution and a rounded sulfate shape. The aspects of grain shape and growth behavior agree well with the theory of gram growth and a roughening transition. The charge tarrier density decreased with deposition time. According to photoluminescence measurements, the peak intensity of the spectra occurred at approximately 2.5 eV, which is related to oxygen vacancies, and decreased with increasing of deposition time. These measurement results suggest that the number of oxygen vacancies, which is related to the electrical conductivity, decrease with deposition time.

• Journal of Magnetics
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• v.7 no.1
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• pp.14-17
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• 2002

Magnetic multilayers of a ferromagnetic (FM)/insulator (I)/ferromagnetic (FM) structure have been studied to investigate magnetic exchange coupling between two FM layers. As the Mumetal $(Ni_{77}Fe_{14}Mo_{5}Cu_4$ wt%) growth temperature increases, the grain size and the surface roughness increase simultaneously. The smallest coupling field is obtained at $40^\circ{C}$ where the grain size is larger than that of the $20^\circ{C}$ sample. The exchange coupling field increases again at temperatures higher than $40^\circ{C}$ due to increase in the surface roughness of the Mumetal.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.862-868
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• 1996

Cadmium sulfide is commonly used as the window material for thin film solar cells, and can be prepared by several techniques such as sputtering, spray pyrolysis, close spaced sublimation (CSS), thermal evaporation, solution growth methods, etc. In this study, CdS films were deposited by thermal evaporation, close spaced sublimation, and solution growth methods, respectively, and the effects of the methods on physical properties of polycrystalline CdS deposited on ITO/glass were investigated. Also, the effects of variously prepared CdS thin films on the physical properties of CdTe deposited on the CdS were investigated. The thickness of polycrystalline CdS films was maintained at $0.3\mu\textrm{m}$ except for the solution grown CdS when $0.2\mu\textrm{m}$ thick CdS was deposited. After the deposition, all the samples were annealed at $400^{\circ}C$ or $500^{\circ}C$ in H2 atmosphere. To investigate physical properties of the deposited and annealed CdS thin films, UV-VIS spectro-photometry, X-ray diffractometry (XRD), and Auger electron spectroscopy (AES), and cross sectional transmission electron microscopy(XTEM) were used to analyze grain size, crystal structure, preferred orientation, optical properties, etc. The annealed CdS showed the bandedge transition at 510nm and the optical transmittance high than 80% for all of the variously deposited films. XRD results showed that CdS thin films variously deposited and annealed had the same hexagonal structures, however, showed different preferred orientations. CSS grown CdS had [103] preferred orientation, thermally evaporated CdS had [002], and CdS grown by the solution growth had no preferred orientation. The largest grain size was obtained for the CSS grown CdS while the least grain size was obtained for the solution grown CdS. Some of the physical properties of CdTe deposited on the CdS thin film such as grain size at the junction and grain orientation were affected by the physical properties of CdS thin films.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.2
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• pp.263-268
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• 1998

(100) ZnSe crystals with twin and grain free were grown by vapor transport method. The defect in (100) ZnSe crystals was investigated by FWHM of X-ray Rocking Curve. The growth rate and seed quality are the main parameters of the growth process to obtain the high quality ZnSe crystals. The geometric shape of the grown (100) ZnSe crystal is dependent on the shape of seed, isothermal line in furnace and the growth rate of each surface in crystal.

• Carbon letters
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• v.7 no.1
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• pp.19-26
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• 2006

Three point bending tests of single edge notched beam (SENB) specimens were carried out to evaluate the fracture behavior of the fine-grain isotropic nuclear grade graphite, IG-11. To measure the crack initiation point and the subsequent crack growth, the direct current potential drop (DCPD) method and a traveling microscope were used. The effects of test variables like initial crack length, specimen thickness, notch type and loading rate on the measured fracture toughness, $K_Q$, were investigated. Based on the test results, the ranges of the test variables to measure the reliable fracture toughness value were proposed. During the crack growth, the rising R-curve behavior was observed in IG-11 graphite when the superficial crack length measured on the specimen surface was used. The increase of crack growth resistance was discussed in terms of crack bridging, crack meandering, crack branching, microcracking and crack deflection, which increase the surface energy and friction force.