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http://dx.doi.org/10.4283/JMAG.2002.7.1.014

Mumetal Growing Temperature Effect on the Exchange Coupling of Cu/mumetal/Al Oxide/Co/Cu Multilayers  

Lee, Y.W. (Department of Materials Engineering, Chungnam National University)
Lee, T.H. (ReCAMM, Chungnam National University)
Kim, C.G. (ReCAMM, Chungnam National University)
Kim, C.O. (ReCAMM, Chungnam National University)
Yoon, T.S. (ReCAMM, Chungnam National University)
Lee, Y.H. (Department of Metallurgical Engineering, Chungnam National University)
Publication Information
Abstract
Magnetic multilayers of a ferromagnetic (FM)/insulator (I)/ferromagnetic (FM) structure have been studied to investigate magnetic exchange coupling between two FM layers. As the Mumetal $(Ni_{77}Fe_{14}Mo_{5}Cu_4$ wt%) growth temperature increases, the grain size and the surface roughness increase simultaneously. The smallest coupling field is obtained at $40^\circ{C}$ where the grain size is larger than that of the $20^\circ{C}$ sample. The exchange coupling field increases again at temperatures higher than $40^\circ{C}$ due to increase in the surface roughness of the Mumetal.
Keywords
exchange coupling field; surface roughness; grain size; boundary;
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  • Reference
1 /
[ S. Tehrani;E Chen;M. Durlam;M. Deherrera;J. M. Slaughter;J. Shi;G. Kerszykowski ] / J. Appl. Phys.   DOI   ScienceOn
2 /
[ W. F. Egelhoff, Jr;P. J. Chen;C. J. Powell;R. D. McMichael;M. D. Stiles ] / Progress in Surface Science   DOI   ScienceOn
3 /
[ B. D. Schrag;A. Anguelouch;Gang Xiao;P. Trouilloud;Yu Lu;W. J. Gallagher;S. S. S. P. Parkin ] / J. Appl. Phys.   DOI   ScienceOn
4 /
[ S. S. P. Parkin;K. P. Roche;M. G. Samant;P. M. Rice;R. B. Beyers;R. E. Scheuerlein;E. J. O'Sullivan;S. L. Brown;J. Bucchigano;D. W. Abraham;Yu Lu;M. Rooks;P. L. Trouilloud;R. A. Wanner;w. J. Gallager ] / J. Appl. Phys.   DOI   ScienceOn
5 /
[ S. M. Hong;H. C. Lee;T. K. Kim;N. Tezuka;T. Miyazaki ] / J. Kor. Mag. Soc.
6 /
[ P. P. Freitas;J. L. Costa;N. Almeida;L. V. Melo;F. Silva;J. Bernardo;C. Santos ] / J. Appl. Phys.   DOI   ScienceOn