• Journal of the Microelectronics and Packaging Society
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• v.11 no.3 s.32
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• pp.63-70
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• 2004

The structural, electrical properties of $(Ba, Sr)TiO_3[BSTO]/RuO_2$ thin films were examined by the addition of amorphous BSTO layer between crystlline BSTO film and $RuO_2$ substrate. We prepared BSTO films with double-layered structure, that is, amorphous layers deposited at $60^{\circ}C$ and crystalline films. Crystalline films were prepared at 550 on amorphous BSTO layer. The thickness of the amorphous layers was varied from 0 to 170 nm. During the deposition of crystalline films, the crystallization of the amorphous layers occurred and the structure was changed to circular while crystalline BSTO films showed columnar structure. Due to insufficient annealing effect, amorphous BSTO phase was observed when the thickness of the amorphous layers exceeded 30 nm. Amorphous BSTO layer could also prevent the formation of oxygen deficient region in $RuO_2$ surface. Leakage current of total BSTO films decreased with increasing amorphous layer thickness due to structural modifications. Dielectric constant showed maxi-mum value of 343 when amorphous layer thickness was 30 nm at which the improvement by grain growth and the degradation by amorphous phase were balanced.

• Journal of the Korean Institute of Landscape Architecture
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• v.28 no.2
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• pp.61-70
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• 2000

The purpose of this study is to identify the proper species of turf and the ground structure for the turf sports grounds. Analysis items are particle distribution of sand and gravel, saturated hydraulic conductivity, soil hardness, and turf growth. Results of this study are as follows. 1)The particle distribution of sand used in the multi-layer rootzone is within the upper limit of the standard level. The diameter of mid-size grain({TEX}$D_{50}${/TEX})was 0.62mm and the value of uniformity ({TEX}$D_{90}${/TEX}/{TEX}$D_{10}${/TEX}) was 3.93. The particle size distribution of sand used in the single-layer rootzone was beyond the standard level as {TEX}$D_{50}${/TEX})=0.86 and {TEX}$D_{90}${/TEX}/{TEX}$D_{10}${/TEX}=8.86. 2) Saturated hydraulic conductivity of the sand was higher in the multi-layer rootzone than in the single-layer rootzone while bulk density was vice versa. 3) Surface hardness was high on Kentucky bluegrass+perennial ryegrass compared to zoysiagrass probably caused by root density. 4) Visual covering and visual rating were highly evaluated on zoysiagrass within summer while better evaluated on Kentucky bluegrass+perennial ryegrass throughout fall to spring. 5) Visual color was better evaluated on Kentucky bluegrass+perennial ryegrass than on zoysiagrass throughout the year. These studies are demanded urgently according to increase in interest in the ground and turf species of the turf sports ground because of World Cup 2002.

• Journal of the Semiconductor & Display Technology
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• v.9 no.1
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• pp.29-33
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• 2010

Recently, the growth of ZnO thin film on glass substrate has been investigated extensively for transparent thin film transistor. We have studied the phase transition of ZnO thin films from metal to semiconductor by changing RF power in the deposition process by RF magnetron sputtering system. The structural, electric, and optical properties of the ZnO thin films were investigated. The film deposited with 75 watt of RF power showed n-type semiconductor characteristic having suitable resistivity $-3.56\;{\times}\;10^{+1}\;{\Omega}cm$, carrier concentration $-2.8\;{\times}\;10^{17}\;cm^{-3}$, and mobility $-0.613\;cm^2V^{-1}s^{-1}$ while other films by 25, 50, 100 watt of RF power closed to metallic films. From the surface analysis (AFM), the number of crystal grain of ZnO thin film increased as RF power increased. The transmittance of the film was over 88% in the visible region regardless of the change in RF power.

• Korean Journal of Materials Research
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• v.9 no.2
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• pp.124-131
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• 1999

Copper film, which is expected to be used as interconnection material for 1 giga DRAM integrated circuits was deposited on hole and trench patterns by Metal Organic Chemical Vapor Deposition(MOCVD) method. After a reflow process, contact and L/S patterns were filled by copper and the characteristics of the Cu reflow process were investigated. When deposited Cu films were reflowed, grain growth and agglomeration of Cu have occurred in surfaces and inner parts of patterns as well as complete filling in patterns. Also Cu thin oxide layers were formed on the surface of Cu films reflowed in $O_2$ambient. Agglomeration and oxidation of Cu had bad influence on the electrical properties of Cu films especially, therefore, their removal and prevention were studied simultaneously. As a pattern size is decreased, preferential reflow takes place inside the patterns and this makes advantages in filling patterns of deep submicron size completely. With Cu reflow process, we could fill the patterns with the size of deep sub-micron and it is expected that Cu reflow process could meet the conditions of excellent interconnection for 1 giga DRAM device when it is combined with Cu MOCVD and CMP process.

• Korean Journal of Digital Imaging in Medicine
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• v.12 no.2
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• pp.145-150
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• 2010

Thick films of carbon fiber were prepared by a heating element of plan shape made in Darin co., We have investigated surface morphology of the specimen depending on heat-treatment temperatures. Scanning electron microscope(SEM) image of carbon fiber thick films of the specimen heat treated shows a grain growth at $1200^{\circ}C$ and becomes a poly-crystallization at $1350^{\circ}C$. The variation of resistivity at the thermally annealed specimen above $600^{\circ}C$ depends on type of the substrates. It may be due to a variation of film thickness and a difference of interfacial phenomena. A heating element of features was affected significantly by skin blood and quantity of heat of the body physiological function. After radiation of farinfrared for plate heating element, the function of biometric physiological is considered of skin blood flow and calorie which greatly affects on individuals. Electromagnetic wave was not influence on the body.

• Macromolecular Research
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• v.11 no.2
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• pp.122-127
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• 2003

A glass-like carbon was fabricated using furan resin. The influence of heat treatment temperature during fabrication process on the chemical and micro-structural changes was studied by various analytical and spectroscopic methods including TGA, FT-IR, CHN, TEM and XRD. The chemical resistance properties of the fabricated glass-like carbon were also investigated. It has been found that the heat-treated samples at higher temperature up to 2600 $^{\circ}C$ in $N_2$ atmosphere had little weight loss, small amounts of functional groups, and high carbon content. The fabricated glass-like carbons upon heat treatment at 2600 $^{\circ}C$ showed an amorphous stage without any grain growth and/or reconstruction of structure. The glass-like carbon had much better chemical resistance than the artificial graphite, and exhibited a high chemical resistance due to its low surface areas, minimum impurities, and low graphite crystallites.

• Journal of the Korean Ceramic Society
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• v.35 no.1
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• pp.88-96
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• 1998

The structural and electrical properties of titanium dioxide(TiO2) thin films deposited on p-type (100) si and 4$^{\circ}$off(100) Si substartes by metalorganic chemical vapor deposition (MOCVD) have been studied with post rapid thermal annealing. TiO2 thin films of anatase phase were grown at 300-500$^{\circ}C$ using titanium post rapid thermal annealing at a temperature of 800$^{\circ}C$ for 30sec. rutile phase was observed in the condition of the deposition temperature over 350$^{\circ}C$ in the ambient air atmosphere and at 500$^{\circ}C$ in cacuu,. SEM and AFM study show-ed surface roughness were increased slightly from 40${\AA}$to 55${\AA}$ after annealing due to grain growth and phase transformation. From capacitane-voltage measurement of Al/TiO2./p-Si structure after annealing we obtained ideal capacitance-voltage characteristics of MOS structure with dielectric constant of 16-22 in case of (100) Si and about 30- in case of 4$^{\circ}$off(100) Si but showed the higher leakage current.

• Journal of the Korean Ceramic Society
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• v.50 no.6
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• pp.390-395
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• 2013

Nanocrystalline CrN films were deposited on Si (100) substrates by means of asymmetric pulsed DC reactive magnetron sputtering. We investigated the growth behavior, corrosion resistance and mechanical properties of CrN films with a change in the duty cycle and pulse frequency. The grain size of the CrN films decreased from 25.4 nm to 11.2 nm upon a decrease in the duty cycle. The corrosion potentials for the CrN films by DC sputtering was approximately - 0.6 V, and it increased to - 0.3 V in the CrN films which underwent pulsed sputtering. The nanoindentation hardness of the CrN films also increased with a decrease in the duty cycle. This enhancement of the corrosion resistance and mechanical properties of pulsed sputtered CrN films could be attributed to the densification and surface smoothness of the microstructure of the films.

• Journal of the Korean Ceramic Society
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• v.53 no.6
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• pp.610-614
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• 2016

Tyranno SA (SiC-polycrystalline fiber, Ube Industries Ltd.) shows excellent heat-resistance up to $2000^{\circ}C$ with relatively high mechanical strength. This fiber is produced by the conversion process from a raw material (amorphous Si-Al-C-O fiber) into SiC-polycrystalline fiber at very high temperatures over $1500^{\circ}C$ in argon. In this conversion process, the degradation reaction of the amorphous Si-Al-C-O fiber accompanied by a release of CO gas for obtaining a stoichiometric composition and the subsequent sintering of the degraded fiber proceed. Furthermore, vaporization of gaseous SiO, phase transformation and active diffusion of the components of the Si-Al-C-O fiber competitively occur. Of these changes, vaporization of the gaseous SiO during the conversion process results in an abnormal SiC-grain growth and also leads to the non-stoichiometric composition. However, using a modified Si-Al-C-O fiber with an oxygen-rich surface, vaporization of the gaseous SiO was effectively prevented, and then consequently a nearly stoichiometric SiC composition could be obtained.

• Journal of the Korean Ceramic Society
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• v.55 no.5
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• pp.480-491
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• 2018

Calcium phosphates (CaP) were prepared by a wet chemical method. Micro-crystalline dicalcium phosphate (DCPD) was precipitated at $37^{\circ}C$ and pH 5.0 using $Ca(OH)_2$ and $H_3PO_4$. The precipitated DCPD solution was kept at $37^{\circ}C$ for 96 h. Artificial bone cement was composed of DCPD, $Ca(H_2PO_4)_2{\cdot}H_2O$ (MCPM), and $CaSO_4{\cdot}1/2H_2O$, $H_2O$ and aqueous poly-phosphoric acid solution. The wet prepared CaP powder was used as a matrix for the bone cement recipe. With the addition of aqueous poly-phosphoric acid, the cement hardening reaction was started and the CaP bone cement blocks were fabricated for the mechanical strength measurement. For the tested blocks, the mechanical strength was measured using a universal testing machine, and the microstructure phase analysis was done by field emission scanning electron microscopy and X-ray diffraction. The cement hardening reaction occurred through the decomposition and recrystallization of MCPM and $CaSO_4{\cdot}1/2H_2O$ added on the surface of the wet prepared CaP, and this resulted in grain growth in the bone cement block.