• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.25 no.3
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• pp.339-347
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• 2014

In this paper, the authors present a new design for a broad-band metamaterial(MTM) absorber that utilizes flexible substrate. The proposed MTM unit cell is constructed by a electric-inducive-capacitive(ELC) resonator and a cut-wire on the same side of the flexible polyimide substrate. To reduce the radar cross section at frequencies other than the targeted frequency bands, the metallic pattern layer of the proposed structure is placed facing toward the incident wave propagation direction. A prototype absorber was fabricated with a planar array of $33{\times}45$ unit cells. Our experiments showed that the proposed absorber exhibits a peak absorption rate of 92 % and 93 % at 9.06 GHz and 15.0 GHz, respectively, and 75 % of the full-width at half-maximum(FWHM) bandwidth is achieved. The proposed backplane-less MTM structure can be used for a broad-band microwave absorber and irregular surface applications.

• Electronic Materials Letters
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• v.14 no.6
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• pp.755-765
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• 2018

In situ nitrogen doped hard carbon nanotubes (NHCNT) were fabricated by pyrolyzing tubular nitrogen doped conjugated microporous polymer. KOH activated NHCNT (K-NHCNT) were also prepared to improve their porous structure. XRD, SEM, TEM, EDS, XPS, Raman spectra, $N_2$ adsorption-desorption, galvanostatic charging-discharge, cyclic voltammetry and EIS were used to characterize the structure and performance of NHCNT and K-NHCNT. XRD and Raman spectra reveal K-NHCNT own a more disorder carbon. SEM indicate that the diameters of K-NHCNT are smaller than that of NHCNT. TEM and EDS further indicate that K-NHCNT are hollow carbon nanotubes with nitrogen uniformly distributed. $N_2$ adsorption-desorption analysis reveals that K-NHCNT have an ultra high specific surface area of $1787.37m^2g^{-1}$, which is much larger than that of NHCNT ($531.98m^2g^{-1}$). K-NHCNT delivers a high reversible capacity of $918mAh\;g^{-1}$ at $0.6A\;g^{-1}$. Even after 350 times cycling, the capacity of K-NHCNT cycled after 350 cycles at $0.6A\;g^{-1}$ is still as high as $591.6mAh\;g^{-1}$. Such outstanding electrochemical performance of the K-NHCNT are clearly attributed by its superior characters, which have great advantages over those commercial available carbon nanotubes ($200-450mAh\;g^{-1}$) not only for its desired electrochemical performance but also for its easily and scaling-up preparation.

• Korean Journal of Materials Research
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• v.28 no.11
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• pp.633-639
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• 2018

In anion exchange membrane fuel cells, Pd nanoparticles are extensively studied as promising non-Pt catalysts due to their electronic structure similar to Pt. In this study, to fabricate Pd nanoparticles well dispersed on carbon support materials, we propose a synthetic strategy using mixed organic ligands with different chemical structures and functions. Simultaneously to control the Pd particle size and dispersion, a ligand mixture composed of oleylamine(OA) and trioctylphosphine(TOP) is utilized during thermal decomposition of Pd precursors. In the ligand mixture, OA serves mainly as a reducing agent rather than a stabilizer since TOP, which has a bulky structure, more strongly interacts with the Pd metal surface as a stabilizer compared to OA. The specific roles of OA and TOP in the Pd nanoparticle synthesis are studied according to the mixture composition, and the oxygen reduction reaction(ORR) activity and durability of highly-dispersed Pd nanocatalysts with different particles sizes are investigated. The results of this study confirm that the Pd nanocatalyst with large particles has high durability compared to the nanocatalyst with small Pd nanoparticles during the accelerated degradation tests although they initially indicated similar ORR performance.

• Journal of Electrochemical Science and Technology
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• v.10 no.3
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• pp.335-343
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• 2019

In this study, $Sr_2Ni_{1.8}Mo_{0.2}O_{6-{\delta}}$ (SNM) with a double perovskite structure was investigated as an alternative anode for use in the $CH_4$ fuel in solid oxide fuel cells. SNM demonstrates a double perovskite phase over $600^{\circ}C$ and marginal crystallization at higher temperatures. The Ni nanoparticles were exsolved from the SNM anode during the fabrication process. As the SNM anode demonstrates poor electrochemical and electro-catalytic properties in the $H_2$ and $CH_4$ fuels, it was modified by applying a samarium-doped ceria (SDC) coating on its surface to improve the cell performance. As a result of this SDC modification, the cell performance improved from $39.4mW/cm^2$ to $117.7mW/cm^2$ in $H_2$ and from $15.9mW/cm^2$ to $66.6mW/cm^2$ in $CH_4$ at $850^{\circ}C$. The mixed ionic and electronic conductive property of the SDC provided electrochemical oxidation sites that are beyond the triple boundary phase sites in the SNM anode. In addition, the carbon deposition on the SDC thin layer was minimized due to the SDC's excellent oxygen ion conductivity.

• Korean Journal of Materials Research
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• v.29 no.8
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• pp.469-476
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• 2019

A lead-free bulk ceramic having a chemical formula $Ba_{0.8}Ca_{0.2}(Ti_{0.8}Zr_{0.1}Ce_{0.1})O_3$ (further termed as BCTZCO) is synthesized using mixed oxide route. The structural, dielectric, impedance, and conductivity properties, as well as the modulus of the synthesized sample are discussed in the present work. Analysis of X-ray diffraction data obtained at room temperature reveals the existence of some impurity phases. The natural surface morphology shows close packing of grains with few voids. Attempts have been made to study the (a) effect of microstructures containing grains, grain boundaries, and electrodes on impedance and capacitive characteristics, (b) relationship between properties and crystal structure, and (c) nature of the relaxation mechanism of the prepared samples. The relationship between the structure and physical properties is established. The frequency and temperature dependence of the dielectric properties reveal that this complex system has a high dielectric constant and low tangent loss. An analysis of impedance and related parameters illuminates the contributions of grains. The activation energy is determined for only the high temperature region in the temperature dependent AC conductivity graph. Deviation from the Debye behavior is seen in the Nyquist plot at different temperatures. The relaxation mechanism and the electrical transport properties in the sample are investigated with the help of various spectroscopic (i.e., dielectric, modulus, and impedance) techniques. This lead free sample will serve as a base for device engineering.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.31-31
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• 2010

The growth of the high-quality GaN epilayers is of significant technological importance because of their commercializedoptoelectronic applications as high-brightness light-emitting diodes (LEDs) and laser diodes (LDs) in the visible and ultraviolet spectral range. The GaN-based heterostructural epilayers have the polar c-axis of the hexagonal structure perpendicular to the interfaces of the active layers. The Ga and N atoms in the c-GaN are alternatively stacked along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs, the stress applied along the same axis contributes topiezoelectric polarization, and thus the total polarization is determined as the sum of spontaneous and piezoelectric polarizations. The total polarization in the c-GaN heterolayers, which can generate internal fields and spatial separation of the electron and hole wave functions and consequently a decrease of efficiency and peak shift. One of the possible solutions to eliminate these undesirable effects is to grow GaN-based epilayers in nonpolar orientations. The polarization effects in the GaN are eliminated by growing the films along the nonpolar [$11\bar{2}0$] ($\alpha$-GaN) or [$1\bar{1}00$] (m-GaN) orientation. Although the use of the nonpolar epilayers in wurtzite structure clearly removes the polarization matters, however, it induces another problem related to the formation of a high density of planar defects. The large lattice mismatch between sapphiresubstrates and GaN layers leads to a high density of defects (dislocations and stacking faults). The dominant defects observed in the GaN epilayers with wurtzite structure are one-dimensional (1D) dislocations and two-dimensional (2D) stacking faults. In particular, the 1D threading dislocations in the c-GaN are generated from the film/substrate interface due to their large lattice and thermal coefficient mismatch. However, because the c-GaN epilayers were grown along the normal direction to the basal slip planes, the generation of basal stacking faults (BSFs) is localized on the c-plane and the generated BSFs did not propagate into the surface during the growth. Thus, the primary defects in the c-GaN epilayers are 1D threading dislocations. Occasionally, the particular planar defects such as prismatic stacking faults (PSFs) and inversion domain boundaries are observed. However, since the basal slip planes in the $\alpha$-GaN are parallel to the growth direction unlike c-GaN, the BSFs with lower formation energy can be easily formed along the growth direction, where the BSFs propagate straightly into the surface. Consequently, the lattice mismatch between film and substrate in $\alpha$-GaN epilayers is mainly relaxed through the formation of BSFs. These 2D planar defects are placed along only one direction in the cross-sectional view. Thus, the nonpolar $\alpha$-GaN films have different atomic arrangements along the two orthogonal directions ($[0001]_{GaN}$ and $[\bar{1}100]_{GaN}$ axes) on the $\alpha$-plane, which are expected to induce anisotropic biaxial strain. In this study, the anisotropic strain relaxation behaviors in the nonpolar $\alpha$-GaN epilayers grown on ($1\bar{1}02$) r-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVO) were investigated, and the formation mechanism of the abnormal zigzag shape PSFs was discussed using high-resolution transmission electron microscope (HRTEM).

• Journal of Sensor Science and Technology
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• v.11 no.6
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• pp.342-349
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• 2002

New formation technique of metal oxide sensing film was proposed m this paper. Silicon wafer with Pt electrodes was used as a substrate for depositing metal Sn film. Metal Sn was deposited in the state of not continuous film but only island state. The samples were prepared to obtain the optimal condition of metal Sn deposition. The resistances of deposited Sn onto Pt electrodes amounted to $1\;k{\Omega}$, $5\;k{\Omega}$, $10\;k{\Omega}$ and $50\;k{\Omega}$, respectively. Also The sample with $1,500\;{\AA}$ thickness of Sn was prepared m order to compare sensing properties between conventional type and proposing type. After deposition of metal Sn, $SnO_2$ was formed by thermal oxidation method for 3 hrs. in $O_2$ ambient at $700^{\circ}C$. Surface morphology, crystal structure and surface roughness of oxidized-sensing film were examined by SEM, XRD, and AFM, respectively. From the results of these analyses, the optimal deposition condition of Sn was that the Pt electrode resistance became $10\;k{\Omega}(300\;{\AA})$. Also, the sensing characteristics of fabricated sensing film for various concentrations of butane, propane and carbon monoxide gases were measured at he operating temperatures of $250^{\circ}C$, $300^{\circ}C$ and $350^{\circ}C$, respectively. Although catalyst as not added to the sensing film, it has exhibited the high sensitivity to all the test gases.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.28 no.3
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• pp.130-134
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• 2018

In the past few years, various solder compositions have been a representative material to electronic packages and surface mount technology industries as a replacement of Pb-base solder alloy. Therefore, extensive studies on process and/or reliability related with the low Ag composition have been reported because of recent rapid rise in Ag price. In this study, Sn-3.0Ag-0.5Cu, Sn-0.7Cu and Sn-0.3Ag-0.5Cu solder bar samples were fabricated by melting of Sn, Ag and Cu metal powders. Crystal structure and element concentration were analyzed by XRD, XRF, optical microscope, FE-SEM and EDS. The fabricated solder samples were composed of ${\beta}-Sn$, ${\varepsilon}-Ag_3Sn$ and ${\eta}-Cu_6Sn_5$ phases.

• Journal of the Korean institute of surface engineering
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• v.45 no.1
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• pp.15-19
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• 2012

Tris(8-quinolinolato)aluminum(III); $Alq_3$ has been frequently used as an electron transporting layer in organic light-emitting diodes. Either Ba with a low work function or Au with a high work function was deposited on $Alq_3$ layer in vacuum. And then, the behaviors of electron transition at the $Alq_3$/Ba and $Alq_3$/Au interfaces were investigated by using the near edge x-ray absorption fine structure (NEXAFS) spectroscopy. In the each interface, the energy levels of unoccupied obitals were assigned as ${\pi}^*$(LUMO, LUMO+1, LUMO+2 and LUMO+3) and ${\sigma}^*$. And the relative intensities of these peaks were investigated. In an oxygen atom composing $Alq_3$ molecule, the relative intensities for a transition from K-edge to LUMO+2 were largely increased as Ba coverage (${\Theta}_{Ba}$, 2.7 eV) with a low work function was in-situ sequentially increased on $Alq_3$ layer. In contrast, the relative intensities for the LUMO+2 peak were reduced as Au coverage (${\Theta}_{Au}$, 5.1 eV) with a high work function were increased on $Alq_3$ layer. This means that the electron transition by photon in oxygen atom which consists in the unoccupied orbitals in $Alq_3$ molecule, largely depends on work function of a metal. Meanwhile, in the case of electron transition in a carbon atom, as ${\Theta}_{Ba}$ was increased on $Alq_3$, the relative intensity from K-edge to ${\pi}_1{^*}$ (LUMO and LUMO+1) was slightly decreased, and from K-edge to ${\pi}_2{^*}$ (LUMO+2 and LUMO+3) was somewhat increased. This rising of the energy state from ${\pi}_1{^*}$ to ${\pi}_2{^*}$ exhibits that electrons provided by Ba would contribute to the process of electron transition in the $Alq_3$/Ba interfaces. As shown in above observation, the analyses of NEXAFS spectra in each interface could be important as a basic data to understand the process of electron transition by photon in pure organic materials.

• Journal of Convergence for Information Technology
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• v.10 no.9
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• pp.28-34
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• 2020

In this paper, an optical sensor based on an AZO semiconductor material is fabricated on an OHP film with high transmittance, and the characteristics of the optical element and the properties of the semiconductor material are described. In order to realize a flexible optical device, which is a major issue in the field of near-electronic devices, a transparent and bendable OHP film was used as a substrate. In addition, ITO, which is used for mass production as a transparent electrode and a semiconductor material, is expensive due to the scarcity of indium. Therefore, it is necessary to find a material that can replace it. The optical and electrical properties of the Au/Al/AZO/OHP structure are implemented to evaluate whether AZO is possible. It was found that devices and materials had no characteristic change by bending, and these results provide a possibility for application to a next-generation device. However, it is necessary to remove fine scratches on the surface of the OHP film, as well as optimized devices based on materials and structures that can improve the photocurrent.