• 제어로봇시스템학회:학술대회논문집
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• 1996.10b
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• pp.612-615
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• 1996

In the continuous casting process, molten metal contacts the mold wall and the molten metal surface is subject to the mold oscillation. The mold oscillation results in the oscillation marks on the surface of solidified steel, which has undesirable effects on the quality of slabs. In order to reduce the oscillation marks by achieving soft contact of molten metal with the mold surface, alternating magnetic field is applied to the surface of molten metal. However, if the magnetic field strength becomes too strong, the melt flow induced by the magnetic field. causes the instability of the molten metal surface, which has also the bad influence on the slab quality. Therefore, it is very important to choose the optimal position of the inductor coil and the optimal level of electric power to minimize the surface defects. In the present work, as a first step toward the optimization problem of the process, numerical studies are performed to investigate the effects of coil position and the electric power level on the meniscus shape and the flow field. As numerical tools, the boundary integral equation method(BIEM) is used for the magnetic field analysis and the finite difference method (FDM) with orthogonal grid generation is used for the flow analysis.

• Journal of Korean Society for Atmospheric Environment
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• v.12 no.3
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• pp.243-254
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• 1996

The main purpose of this study is to investigate the collection efficiency characteristics of a cylindrical ESP. To do that, it is necessary to analyze the electric field, gas flow field, and mechanism of particle movement by numerical simulation based on EHD model. For a gas flow field, Navier-Stokes equation involving the electric source term was solved by SIMPLE algorithm. In case of the electric field, the current continuity and electric field equations were solved by S.O.R. method. The analysis of particle movement was performed on the basis of PSI-CELL model from the Lagrangian viewpoint. The results showed that the influence on the gas flow field by the electric field is almost negligible in a cylindrical ESP. The particle drift velocity $V_P$ toward the collection surface is increased continuously by the electrostatic force due to the rise of particle charge as the particle is moving to the flow direction and the particle size becomes larger. The collection efficiency is to quitely higher with the increase of applied voltage for the same particle size, while becomes smaller as the inlet velocity is increased.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.7 no.5
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• pp.852-857
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• 2006

This paper presents a precision method to calculate the electric field density of mountain area using digital terrain elevation data(DTED). Generally we calculate the electric field density of a point adding a direct field density and horizontal reflection field density between two points. In this paper, we consider a vertical reflection field density from vertical surface near the wave propagation line between transmitter and receiver. The vertical reflection electric field have different propagation path and polarization from a horizontal reflection field. And the total electric field density adding horizontal field density and vertical reflection value is more accurate than a direct path electrical field density or direct field density adding a horizontal reflection field density.

• Journal of Science Education
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• v.46 no.2
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• pp.212-221
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• 2022

In this study, we propose an analytical model to elucidate the formation of electric fields between two parallel conducting plates. Using nine Gaussian surfaces, we investigated the charge redistributions and electric fields formed by parallel conducting plates when two charged plates get close together. The electric charges are redistributed via a new electrostatic equilibrium to create the electric field of each plates. As a result, the electric field start from + electrode plate to - electrode plate via inducing a new electrostatic equilibrium, implying that the application of Gaussian surfaces to only one of the electrodes of parallel-plate capacitors is deserved. The results will help undergraduate students understand the charge redistribution and the electric field formation in parallel-plate capacitors in a reasonable manner.

• Journal of the Korean Society for Precision Engineering
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• v.20 no.4
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• pp.92-102
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• 2003

To detect electrical faults of a TFT (Thin Film Transistor) panel for the LCD (Liquid Crystal Display), techniques of converting electric field to an image are used One of them is the PDLC (polymer-dispersed liquid crystal) modulator which changes light transmittance under electric field. The advantage of PDLC modulator in the electric field detection is that it can be used without physically contacting the TFT panel surface. Specific pattern signals are applied to the data and gate electrodes of the panel to charge the pixel electrodes and the image sensor detects the change of transmittance of PDLC positioned in proximity distance above the pixel electrodes. The image represents the status of electric field reflected on the PDLC so that the characteristic of the PDLC itself plays an important role to accurately quantify the defects of TFT panel. In this paper, the image of the PDLC modulator caused by the change of electric field of the pixel electrodes on the TFT panel is acquired and how the characteristics of PDLC reflect the change of electric field to the image is analyzed. When the holding time of PDLC is short, better contrast of electric field image can be obtained by changing the instance of applying the driving voltage to the PDLC.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.1
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• pp.54-60
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• 1994

In this paper, we present the analytical models for the change of the lateral electric field distribution and the velocity saturation region length with the electron trapping of stressed SC-PMOSFET in the saturation region. To derive the hot-electron-induced lateral electric field of stressed SC-PMOSFET. Ko's pseudo two dimensional box model in the saturation region which illustrates the analysis of the velocity saturation region is modified under the condition of electron trapping in the oxide near the drain region. From the results, we have the following lateral electric field in the y-direction, that is, E(y) ES1satT.cosh(y/l) qNS1tT.sinh(y/l)/lCox. It is shown that the trapped electrons influence the field in the drain region. decreasing the lateral electric field. Calculated velocity saturaion length increases with the trapped electrons. increasing the drain current of stressed SCPMOSFET. This results well explain the HEIP phenomenon of PMOSFET's.

• Proceedings of the Optical Society of Korea Conference
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• 1989.02a
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• pp.161-164
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• 1989

When an electric (or a magnetic) line source is located near the surface, surface wave type field is generated and the energy associated with this field is guided very close to the impedance surface. In this paper, field strength is calculated by the exact modal and ray methods for a line source excited parallel plate waveguide. The surface wave contribution to the modal and ray solutions is anticipated very strong and must be included in both solutions.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.16 no.1
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• pp.35-43
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• 2002

In the last decade, considerable efforts have been made to make a new class of solid state high power, high speed electronic device, namely, the Photo-Conductive Power Switch(PCPS), and to characterize the high-field performance of PCPS under high power, high voltage conditions. But the problem of surface flashover phenomena persist, preventing the realization of reliable and efficient high-speed, high voltage switching devices. It is essential to have a clear understanding on the physical processes behind the surface flashover problem to develop new technologies and device architectures so as to fabricate PCPS that are capable of high-field high-voltage. Also, it is imperative to identify new materials that could satisfy the requirements for high-field, high-power devices. Since surface flashover, surface breakdown phenomena is observed for all the devices that foiled at the applied field much lower than semiconductor bulk breakdown field, surface passivation is considered one of the important practical methods to improve the high field performance of the devices. Therefore, this paper was studied the main properties and mechanism of the semiconductor surface flashover before and after passivation under high electric-field.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1636-1638
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• 2007

We report on low-voltage pentacene TFTs with a Al2O3/OTS as a gate dielectric. Improving device characteristics, we performed chemical modification of self-grown Al2O3 surface with an octadecyltrichlorosilane(OTS) self-assembled monolayer(SAM). As the result of this combination, the mobility was improved from 0.3 to $0.45\;cm^2/Vs$. In addition, we examined that the SAM dipole electric field have an influence on gate leakage current, transfer and output characteristics.

• Proceedings of the KIEE Conference
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• 2000.07b
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• pp.828-830
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• 2000

This paper describes BIEM(Boundary Integral Equation Method) for computation of three dimensional electric field distribution and numerical method that an equivalent charge density is unknown variable. After computing numerically the surface charge distribution. the distribution of both potential and electric field are obtained. Finally, this numerical method is applied to the concentric sphere and the coaxial cylindrical model and numerical result is compared to the analytic solution.