• Nuclear Engineering and Technology
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• v.52 no.10
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• pp.2299-2305
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• 2020

Zr alloy specimens were coated with Cr-Al alloy to enhance their resistance to oxidation. The coated samples were oxidized at 1200 ℃ in a steam environment for 300 s and showed extremely low oxidation when compared to uncoated Zr alloy specimens. The microstructure and elemental distribution of the oxides formed on the surface of Cr-Al alloys have been investigated by transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). A very thin protective layer of Cr₂O₃ formed on the outer surface of the Cr-Al alloy, and a thin Al₂O₃ layer was also observed in the Cr-Al alloy matrix, near the surface. Our results suggest that these two oxide layers near the surface confers excellent oxidation resistance to the Cr-Al alloy. Even after exposure to a high temperature of 1200 ℃, inter-diffusion between the Cr-Al alloy and the Zr alloy occurred in very few regions near the interface. Analysis of the inter-diffusion layer by high-resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (EDS) measurement confirmed its identity as Cr₂Zr.

• Journal of the Korean institute of surface engineering
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• v.27 no.5
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• pp.292-302
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• 1994

Alloy deposits of 80Sn-20Pb, electroplated on Cu-based leadframe alloy from an organic sulfonate bath were aged at $150^{\circ}C$ to form intermetallic phases between substrate and deposit, and effects of the deposit morphology, influenced by deposition conditions, on the fracture resistance of the 80Sn-20Pb deposit aged at $150^{\circ}C$ were examined. The growth rate of intermetallic compound layer on aging depended on the microstructure of deposit ; it was fastest in deposit formed using pulse current in bath without grain refining additive, but slowest in deposit formed using dc current in bath containing grain refining additive in spite of similar structure with equivalent grain size. The grain refining additive incorporated in electrodeposit appears to inhibit diffusion of atoms on aging, resulting in slow growth of intermetallic layer in the thickness direction but substantial growth in the lateral one. Density of surface cracks that were occurring when samples were subjected to the $90^{\circ}$-bending test increased with increasing the thickness of intermatallic layer on aging. For the same aged samples, the surface crack density of the sample electrodeposited from a bath containing the grain refining additive was the least due to the inhibiting effect of the additive incorporated into the deposit during electrolysis on atomic diffusion.

• Journal of Radiation Protection and Research
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• v.16 no.2
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• pp.27-39
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• 1991

The diffusion of Sr-85, Cs-137, Co-60 and Am-241 in compacted domestic bentonite was studied, using a diffusion cell unit in which diffusion took place axially from the center of cylindrical bentonite sample body. The effects of compaction density and heat-treated bentonite on diffusion were analysed. And the diffusion mechanism of radionuclide was also analysed by evaluating the measured diffusivity of anion Cl-36. The apparent diffusivities obtained for Sr-85, Cs-137, Co-60 and Am-241 were $l.07{\times}10^{-11},\;6.705{\times}10^{-13},\;l.226{\times}10^{-13}\;and\; l.310{\times}10^{-14}m^2/sec$, respectively. When the as-pressed density of bentonite increased from $1.8\;to\;2.0g/cm^3$, the apparent diffusivity of Cs-137 decreased by quarter. In the case of bentonite heat-treated to $150^{\circ}C$, no significant change in diffusivity was observed, which showed the possibility that the domestic bentonite could be used as a chemical barrier to retard the radionuclide migration at below $150^{\circ}C$. From the calculated pore and surface diffusivity, the surface diffusion due to the concentration gradient of radionuclide sorbed on the solid phase was found to dominate greatly in total transport process.

• Journal of Technologic Dentistry
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• v.35 no.2
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• pp.137-142
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• 2013

Purpose: This study was to observe the surface and interfacial characteristic of Zirconia by surface treatment. And it was observed the roughness and contact angle according to processing, and the interfacial properties by surface treatment on zirconia. Methods: The oxide formation and ion diffusion between core and veneer ceramic were determined by the X-ray Dot Mapping of EPMA(Electron probe micro analyzer). The roughness was measured by 3D Digital microscope and the contact angle according to processing of zirconia was observed using distilled water on the surface. Results: The surface roughness of the specimens Z04, Z12, Z15 was measured $0.67({\pm}0.03){\mu}m$, $0.50({\pm}0.12){\mu}m$, $0.35({\pm}0.09){\mu}m$, respectively. As results of contact angle test, Z04, Z12, Z15 of specimen group without binder treatment was measured $46.79({\pm}3.17)^{\circ}$, $57.47({\pm}4.83)^{\circ}$, $56.19({\pm}2.66)^{\circ}$, respectively. but, L04, L12, L15 of specimen group without binder treatment was measured $63.84({\pm}2.20)^{\circ}$, $66.08({\pm}0.16)^{\circ}$, $65.10({\pm}1.01)^{\circ}$, respectively. Average contact angle of L15 was measured $65.10({\pm}1.01)^{\circ}$. In X-ray Dot Mapping results, thickness of binder including Al element was measured that each of L04, L12, L15 were $20{\mu}m$, $15{\mu}m$, $10{\mu}m$. Conclusion: The more rough surface increases the wettability, but the sintered exclusive binder decreases the wettability.

• Transactions on Electrical and Electronic Materials
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• v.1 no.4
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• pp.1-6
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• 2000

The mechanical strength of silicon carbide dose nor permit the use of diffusion as a means to achieve selective doping as required by most electronic devices. While epitaxial layers may be doped during growth, ion implantation is needed to define such regions as drain and source wells, junction isolation regions, and so on. Ion activation without an annealing cap results in serious crystal damage as these activation processes must be carried out at temperatures on the order of 1600$^{\circ}C$. Ion implanted silicon carbide that is annealed in either a vacuum or argon environment usually results in a surface morphology that is highly irregular due to the out diffusion of Si atoms. We have developed and report a successful process of using silicon overpressure, provided by silane in a CAD reactor during the anneal, to prevent the destruction of the silicon carbide surface, This process has proved to be robust and has resulted in ion activation at a annealing temperature of 1600$^{\circ}C$ without degradation of the crystal surface as determined by AFM and RBS. In addition XPS was used to look at the surface and near surface chemical states for annealing temperatures of up to 1700$^{\circ}C$. The surface and near surface regions to approximately 6 nm in depth was observed to contain no free silicon or other impurities thus indicating that the process developed results in an atomically clean SiC surface and near surface region within the detection limits of the instrument(${\pm}$1 at %).

• Journal of the Korean institute of surface engineering
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• v.56 no.1
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• pp.69-76
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• 2023

The effects of hairline treatment on surface blackening and thermal diffusion behaviors of Zn-Al-Mg alloy coated steel sheet were evaluated by the three-dimensional surface profiler and laser-flash technique. The metallographic observation of coating damages by hairline treatments showed that several cracks were initiated and propagated along the interface between primary Zn/eutectic phases. As the hairline processing became more severe, the crack occurrence frequency in eutectic phase of coating layer and the surface roughness increased, which had a proportional relationship with the level of blackening on the coating surface. In addition, the higher interfacial areas of the blackened coating surface, caused by the hairline process, led to an increase in thermal diffusivity and conductivity of the coated steel sheet. On the other hand, when the coating damage by hairline treatment was excessive and the steel substrate was exposed, there was little difference between the thermal diffusivity/conductivity of the untreated sample though the blackening degree was higher than that of untreated sample. This work suggests that the increase in the surface areas of the coating layer without exposure to steel substrate through hairline treatment can be one of the effective technical strategies for the development of Zn-Al-Mg alloy coated steel sheets with higher blackening level and thermal diffusivity.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.11
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• pp.683-689
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• 2015

For the formation of $N^+$ doping, the antimony ions are mainly used for the fabrication of a BJT (bipolar junction transistor), CMOS (complementary metal oxide semiconductor), FET (field effect transistor) and BiCMOS (bipolar and complementary metal oxide semiconductor) process integration. Antimony is a heavy element and has relatively a low diffusion coefficient in silicon. Therefore, antimony is preferred as a candidate of ultra shallow junction for n type doping instead of arsenic implantation. Three-dimensional (3D) profiles of antimony are also compared one another from different tilt angles and incident energies under same dimensional conditions. The diffusion effect of antimony showed ORD (oxygen retarded diffusion) after thermal oxidation process. The interfacial effect of a $SiO_2/Si$ is influenced antimony diffusion and showed segregation effects during the oxidation process. The surface sputtering effect of antimony must be considered due to its heavy mass in the case of low energy and high dose conditions. The range of antimony implanted in amorphous and crystalline silicon are compared each other and its data and profiles also showed and explained after thermal annealing under inert $N_2$ gas and dry oxidation.

• Proceedings of the Korean Geotechical Society Conference
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• 2006.10a
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• pp.481-489
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• 2006

Two dimensional diffusion model test was conducted to investigate the sedimentation properties and consolidation process of reclaimed ground using dredging coarse soil which is composed of passing amount 20 percentage and 45 percentage of #200 sieve size respectively. The passing amount of #200 sieve size affected on sedimentation properties. The coarse soil which is passing amount of 20 percent showed that the sedimentation structure was layered type and passing amount of 45 percentage was wall-partition type according diffusion distance. Furthermore, the water content of surface and section, and distribution of fine soil were changed according to diffusion distance. and the change amount of pore water pressure and strength property when soil is diffused, segregated and accumulated can be applied efficiently in design of dredging and reclamation.

• Journal of Welding and Joining
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• v.19 no.3
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• pp.311-316
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• 2001

This paper presents that the affecting factors to the solderability and initial reliability. It is the factor that the coefficient of thermal expansion between package and PCB(Printed Circuit Board), the quantity of solder paste and reflow condition, and Au thickness of the solder ball pad on polyimide tape. As the reflow soldering condition for 48 ${\mu}BGA$ is changed, it is estimated that the quantity of Au diffusion at eutectic Sn-Pb solder surface and initial bonding strength of eutectic Sn-Pb solder and lead free solder. It is the result that quantitative measurement of Au diffusion quantity is difficult, but the shear strength of eutectic Sn-Pb solder joint is 842 mN at first reflow and increases 879 mN at third reflow. The major failure mode in solder is judged solder fracture. So, Au diffusion quantity is more affected by reflow temperature than by the reflow times.

• Korean Journal of Materials Research
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• v.13 no.2
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• pp.101-105
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• 2003

In this study, we have investigated the availability of the electroless Ni-B plating for a diffusion barrier of the bus electrode. The Ni-B layer of 1$\beta$: thick was electroless deposited on the electroplated Cu bus electrode for AC plasma display. The layer was to encapsulate Cu bus electrode to prevent from its oxidation and to serve as a diffusion barrier against Cu contamination of the transparent dielectric layer in AC plasma display. The microstructure of the as-plated barrier layer was made of an amorphous phase and the structure was converted to crystalline at about 30$0^{\circ}C$. The concentration of boron was about 5∼6 wt.% in the electroless Ni-B deposit regardless of DMAB concentration. The electroless Ni-B deposit was coated on the surface of the electroplated Cu bus electrode uniformly. And the electroless Ni-B plating was found to be an appropriate process to form the diffusion barrier.