• Journal of the Korean Ceramic Society
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• v.39 no.10
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• pp.907-911
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• 2002

Using the two-dimensional Wulff plot, the equilibrium shape of a sapphire crystal was investigated as a function of surface energy anisotropy. Depending on the relative values of surface energy for various facet planes, the projected shape of equilibrium sapphire was determined to be rectangle, parallelogram, hexagon or octagon. The results are compared with the experimentally observed shapes of internal cavities of submicron range in sapphire single crystals.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.12 no.4
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• pp.75-80
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• 2013

Single crystal sapphire being used in high technology industry is a brittle material with a high hardness and excellent physical properties. ELID(Electrolytic In-Process Dressing) grinding technology was applied to material removal machining process of single crystal sapphire wafer. Ultrasonic vibration which added to material using ultrasonic table was adopted to efficient ELID grinding of sapphire materials. The evaluation of the ground surface of single crystal sapphire wafer was carried out by means of surface measuring by using AFM(Atomic Force Microscope), surface roughness tester and optical microscope device. As the results of experiment, it was shown that more efficient grinding was conducted when using ultrasonic table. In case of using #170 grinding wheel, surface roughness of ELID ground specimen in using ultrasonic table was superior to ELID ground specimen without ultrasonic table. However, In case of using #2000 grinding wheel, surface roughness of ELID ground specimen in using ultrasonic table was inferior to ELID ground specimen without ultrasonic table.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2012.10a
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• pp.929-930
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• 2012

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.1
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• pp.38-44
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• 2008

Contiuous c-oriented zeolite MFI films $(<35{\mu}m)$ were prepared by hydrothermal secondary growth of silicalite-1 seed crystal in the surface of alumina porous substrate and silicon substrate. The supported films were characterized with scanning electron microscopy and X-ray diffraction. Effect of substrate surface roughness were investigated and a mechanism for c-oriented film formation and characteristic dom-like defects formation which is observed after seeding growth was discussed. The roughness of substrate plays an important role.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.1
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• pp.21-24
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• 2020

We investigated a solution-driven Yttrium Tin Oxide (YSnO) film that was imprinted using a parallel nanostructure as a liquid crystal (LC) alignment layer. The imprinting process was conducted at the annealing temperature of 100℃. To evaluate the effect of this process, we conducted surface analyses including atomic force microscopy (AFM). During imprinting, the surface roughness was reduced, and anisotropic characteristics were observed. Planar LC alignment was observed at a pretilt angle of 0.22° on YSnO film. Surface anisotropy induced by imprinting method forces LC to align along the direction of the parallel nanostructure, which is an alternative to conventional polyimide treated using a rubbing process.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2003.10a
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• pp.363-366
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• 2003

In nanomachining processes, chemical effects are more dominant factor compared with physical deformation. For example, during the nanoscratch on a silicon surface in the atmosphere, micro protuberances are formed due to the mechanochemical reaction between the diamond tip and the surface. On the contrary, in case of chemically stable materials, such as ceramics or glasse, the surface protuberance are not formed. The purpose of this study is to understand effects of the mechanochemical reaction between tip and surfaces on deformation behaviors of hard-brittle materials. Nanometerscale elasoplastic deformation behavior of single crystal silicon (100) was characterized with the surface protuberance phenomena, and compared with that of borosilicate (Pyrex glass 7740).

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.4
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• pp.573-577
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• 1997

Surface phase transition is known to be observed at the system that there exists a strong attractive potential between particles adsorbed. This study presents a dependence of the surface phase transition on strong attractive force using a simple occupation statistical method. It was found that the system exhibits a phase transition from the vacuum phase into the population phase and the critical pressure also increases with the temperature. This fact indicates that these results explain well qualitatively the surface phase transition.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.20 no.4
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• pp.395-400
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• 2011

Scanning Probe Lithography is a method to localized oxidation on single crystal silicon wafer surface. This study demonstrates nanometer scale non contact lithography process on (100) silicon (p-type) wafer surface using AFM(Atomic force microscope) apparatuses and pulse controlling methods. AFM-based experimental apparatuses are connected the DC pulse generator that supplies ultra short pulses between conductive tip and single crystal silicon wafer surface maintaining constant humidity during processes. Then ultra short pulse durations are controlled according to various experimental conditions. Non contact lithography of using ultra short pulse induces electrochemical reaction between micro-scale tip and silicon wafer surface. Various growths of oxides can be created by ultra short pulse non contact lithography modification according to various pulse durations and applied constant humidity environment.

• 연구논문집
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• s.23
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• pp.15-27
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• 1993

The single crystal specimens were solidified by modified Bridgeman method. The surface recrystallized single crystal specimens were prepared by shot peening followed by heat treatment. The surface recrystallization begins at the dendrite cores on the surface. The recrystallized grains grew into the inner side of the specimen. The growth of recrystallized grains was inhibited by the pores and eutectic phases. The primary $\gamma'$ phases were dissolved at the recrystallized grain boundaries during the grain growth. The grain growth of recrystallized grains was similar to the cellular type transformation. No orientation relationships were found bewteen the recrystallized grains and the parent phase.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.2
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• pp.130-132
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• 2001

The mechanisms of pretilt angle generation in nematic liquid crystal (NLC) with negative dielectric anisotropy on a rubbed polyimide (PI) surface for homeotropic alignment were studied. The pretilt angle of negative type NLC was smaller than that of the positive type NLC for all rubbing strength regions on the rubbed PI surface. The pretilt angle generated in NLC does not attributable to steric interaction between the fluorine moiety of NLC and the polymer surface on the rubbed PI surface. Consequently, the mechanism of the pretilt angle generation for homeotropic alignment is different from the one for homogeneous alignment.