• 한국분무공학회지
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• 제12권4호
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• pp.185-190
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• 2007

There is a growing interest to develop a new cleaning technology to overcome the disadvantages of wet cleaning technologies such as environmental pollution and the cleaning difficulty of contaminants on integrated circuits. Laser cleaning is a potential technology to remove various pollutants on a wafer surface. However, there is no fundamental data about cleaning efficiencies and cleaning mechanisms of contaminants on a wafer surface using a laser cleaning technology. Therefore, the cleaning characteristics of a wafer surface using an excimer laser were investigated in this study. Fingerprint consisting of inorganic and organic materials was chosen as a representative of pollutants and the effectiveness of a laser irradiation on a wafer cleaning has been investigated qualitatively and quantitatively. The results have shown that cleaning degree is proportional to the laser irradiation time and repetition rate, and quantitative analysis conducted by an image processing method also have shown the same trend. Furthermore, the cleaning efficiency of a wafer contaminated by fingerprint strongly depended on a photothermal cleaning mechanism and the species were removed in order of hydrophilic and hydrophobic contaminants by laser irradiation.

• 한국표면공학회지
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• 제28권1호
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• pp.23-33
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• 1995

AISI 304 stainless steel has high resistance to corrosion due to the presence of a self-healing chromium oxide film on the surface, which also accounts for the difficulty in plating. Surface cleaning of this alloy is of fundamental importance in gold plating since its effectiveness puts an upper limit on the quality of the final coating. The cleaning of AISI 304 stainless steel was investigated with elimination of artificial passive oxide film and degreasing of remaining buffing wax as stearic acid. The familiar cleaning methods i.e. ultrasonic cleaning, electro-cleaning and activation treatment were fabricated in this study. Activation treatment showed best cleaning efficiency for elimination of passive oxide film among these methods, which was also confirmed by AES (Auger electron spectrometer) analysis. However, the best condition of cleaning was obtained by combining these methods. Electrocleaning time, for degreasing the stearic acid layer, was decreased with increasing amount of added KCN.

• Current Optics and Photonics
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• 제7권6호
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• pp.714-720
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• 2023

Laser cleaning has the advantages of environmental protection, precision, and high efficiency, and has good prospects for application in removing oxide films on the surface of aluminum alloy. This paper discusses the cleaning threshold and cleaning mechanism of aluminum alloy surface oxide film. A nanosecond pulsed laser was used to remove a 5-㎛-thick oxide film from the surface of 7A04 aluminum alloy, and the target surface temperature and cleaning depth were simulated. The effects of different laser energy densities on the surface morphology of the aluminum alloy were analyzed, and the plasma motion process was recorded using a high-speed camera. The temperature measurement results of the experiment are close to the simulation results. The results show that the laser cleaning of aluminum alloy oxide film is mainly based on the vaporization mechanism and the shock wave generated by the explosion.

• 한국레이저가공학회지
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• 제12권4호
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• pp.17-25
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• 2009

The surface cleaning method based on the laser-induced breakdown (LIB) of gas and subsequent plasma and shock wave generation can remove small particles from solid surfaces. In the laser shock cleaning (LSC) process, a high-power laser pulse induces optical breakdown of the ambient gas above the solid surface covered with contaminant particles. The subsequently created shock wave followed by a high-speed flow stream detaches the particles. In this work, a novel surface cleaning process using laser-induced breakdown of liquid is introduced and demonstrated. LIB of a micro liquid jet increases the shock wave intensity and thus removes smaller particle than the conventional LSC method. Experiments demonstrate that the cleaning force and cleaning efficiency are also increased significantly by this method.

• 에너지공학
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• 제28권1호
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• pp.57-64
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• 2019

본 연구에서는 산업용 발전설비 부품의 곡면을 표면처리 하기 위한 브라스팅 노즐을 설계한 후 압축성 유동해석을 통해 분사 성능을 살펴보았다. 이때 곡면 노즐의 출구는 부품의 표면을 따라 곡면으로 설계되었다. 3차원 프린팅으로 노즐을 제작한 후 실린더형 시편의 표면에 연마재를 분사하여 세정 성능시험을 수행하였다. 해석 후 얻은 유효 세정 면적과 실험 후 얻은 유효 세정 면적의 크기와 형상이 유사하였으며 이로부터 곡면형 노즐 설계의 타당성 및 실효성을 확인하였다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2010년도 춘계학술발표대회
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• pp.24.1-24.1
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• 2010

In practical operation, the exposed surfaces may get dirty thus degrade the performance of devices. So the combination of self cleaning and antireflection is very desirable for use in outdoor photovoltaic and displaying devices, self cleaning windows and car windshields. For the purpose of self cleaning, the surface needs to be either superhydrophobic or superhydrophilic. However, in practice AR in the visible region and self cleaning are a pair of competitive properties. To satisfy the requirements for superhydrophobic or superhydrophilic surfaces, high surface roughness is required. But it usually cause severely light scattering. Photo-responsive coatings (TiO2, ZnO etc.) can lead to superhydrophilic. However, the refractive indices are high. Thus for porous structure, controlling pore size in the underwavelength scale to reduce the light scattering is very crucial for highly transparent and self cleaning antireflection coating. Herein, we demonstrate a simple method to make high performance broadband antireflection layer on the glass surface, by "carving" the surface by hot alkali solution. Etched glass has superhydrophilic surface. By chemical modification, it turns to superhydrophobic. Enhanced transparency (up to 97%) in a broad wavelength range was obtained by short time etching. Also antifogging effect has been demonstrated, which may offer advantage for devices working at high humidity environment or underwater. Compositional dependence of the properties was observed by comparing three different commercially available glasses.

• 반도체디스플레이기술학회지
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• 제2권3호
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• pp.1-6
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• 2003

In the rapid changes of the semiconductor manufacturing technologies for early 21st century, it may be safely said that a kernel of terms is the size increase of Si wafer and the size decrease of semiconductor devices. As the size of Si wafers increases and semiconductor device is miniaturized, the units of cleaning processes increase. A present cleaning technology is based upon RCA cleaning which consumes vast chemicals and ultra pure water (UPW) and is the high temperature process. Therefore, this technology gives rise to environmental issue. To resolve this matter, candidates of advanced cleaning processes have been studied. One of them is to apply the electrolyzed water. In this work, electrolyzed water cleaning was compared with various chemical cleaning, using Si wafer surfaces by changing cleaning temperature and cleaning time, and especially, concentrating upon the contact angle. It was observed that contact angle on surface treated with Electrolyzed water cleaning was $4.4^{\circ}$ without RCA cleaning. Amine series additive of high pKa (negative logarithm of the acidity constant) was used to observe the property changes of cathode water.

• 반도체디스플레이기술학회지
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• 제19권2호
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• pp.45-50
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• 2020

We investigated the Si_1-xGe_x surface properties when dry cleaning the films using NF₃ / H₂O remote plasma. After the dry cleaning process, it was found that about 80-250 nm wide bumps were formed on the SiGe surface regardless of Ge concentration in the rage of x = 0.1 ~ 0.3. In addition, effects of the dry cleaning processing parameters such as pressure, substrate temperature, and H₂O flow rates were examined. It was found that the surface bump is significantly dependent on the flow rate of H₂O. Based on these observations, we would like to provide additional guidelines for implementing the dry cleaning process to SiGe materials.

• Journal of Welding and Joining
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• 제16권6호
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• pp.77-85
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• 1998

Effects of non-cleaning and cleaning fluxes on the wetting properties and defects at flow soldered joints were investigated. Non-cleaning flux (R-type of 3.3% solid content) and cleaning flux (RMA-type of 15% solid content) were used. Wetting test was accomplished by wetting balance method with changing surface state of wetting specimen, CU. Sn-37%Pb solder was used for wetting test and flow soldering. As experimental results, the wetting time for vertical force from the surface tension being zero was mainly affected by surface state of the wetting specimen. Non-cleaning flux had a good wettability compared with cleaning flux. In case of non-cleaning flux, conveyor speed had a great affection to defects of bridge, icicle, and poor solder.

• 한국표면공학회지
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• 제54권6호
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• pp.365-370
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• 2021

In this research, we proceeded with research on plasma resistance of the cleaning process of APS(Atmospheric Plasma Spray)-Y₂O₃ coated parts used for semiconductor and display plasma process equipment. CF₄, O₂, and Ar mixed gas were used for the plasma environment, and respective alconox, surfactant, and piranha solution was used for the cleaning process. After APS-Y₂O₃ was exposed to CF₄ plasma, the surface changed from Y₂O₃ to YF₃ and a large amount of carbon was deposited. For this reason, the plasma corrosion resistance was lowered and contamination particles were generated. We performed a cleaning process to remove the defect-inducing surface YF₃ layer and carbon layer. Among three cleaning solutions, the piranha cleaning process had the highest detergency and the alconox cleaning process had the lowest detergency. Such results could be confirmed through the etching amount, morphology, composition, and accumulated contamination particle analysis results. Piranha cleaning process showed the highest detergency, but due to the very large thickness reduction, the base metal was exposed and a large number of contaminated particles were generated. In contrast, the surfactant cleaning process exhibit excellent properties in terms of surface detergency, etching amount, and accumulated contamination particle analysis.