• Journal of Electrical Engineering and Technology
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• v.13 no.1
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• pp.438-444
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• 2018

Structured light vision system has been widely used in 3D surface profiling. Usually, it is composed of a camera and a laser which projects a line on the target. Calibration is necessary to acquire 3D information using structured light stripe vision system. Conventional calibration algorithms have found the pose of the camera and the equation of the stripe plane of the laser under the same coordinate system of the camera. Therefore, the 3D reconstruction is only possible under the camera frame. In most cases, this is sufficient to fulfill given tasks. However, they require multiple images which are acquired under different poses for calibration. In this paper, we propose a calibration algorithm that could work by using just one shot. Also, proposed algorithm could give 3D reconstruction under both the camera and laser frame. This would be done by using newly designed calibration structure which has multiple vertical planes on the ground plane. The ability to have 3D reconstruction under both the camera and laser frame would give more flexibility for its applications. Also, proposed algorithm gives an improvement in the accuracy of 3D reconstruction.

• Geomechanics and Engineering
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• v.19 no.1
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• pp.93-104
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• 2019

Anomalies and/or fractured grounds not detected by the surface geophysical and geological survey performed during design stage may cause significant problems during tunnel excavation. Many studies on prediction methods of the ground condition ahead of the tunnel face have been conducted and applied in tunneling construction sites, such as tunnel seismic profiling and probe drilling. However, most such applications have focused on the drill and blast tunneling method. Few studies have been conducted for mechanized tunneling because of the limitation in the available space to perform prediction tests. This study aims to predict the ground condition ahead of the tunnel face in TBM tunneling by using an electrical resistivity tomography survey. It compared the characteristics of each electrode array and performed an investigation on in-situ tunnel boring machine TBM construction site environments. Numerical simulations for each electrode array were performed, to determine the proper electrode array to predict anomalies ahead of the tunnel face. The results showed that the modified dipole-dipole array is, compared to other arrays, the best for predicting the location and condition of an anomaly. As the borehole becomes longer, the measured data increase accordingly. Therefore, longer boreholes allow a more accurate prediction of the location and status of anomalies and complex grounds.

• Journal of the Korean Vacuum Society
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• v.2 no.2
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• pp.199-208
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• 1993

The effect of nucleation free energy related to Si surface states on diamond film growth behavior has been studied. Ar first, the three kinds of diamond thin films (A, B, C) were deposited on various Si substrates (A-Si, B-Si, C-Si) whose surfaces were polished with 1 ${\mu}m$ diamond paste, 6 ${\mu}m$ Al_2O_3$ powder and 12 ${\mu}m$ Al_2O_3$ powder respectively. And then, relative nucleation free energy calculated is ${\Delta}G_{A-Si}<{\Delta}G_{B-Si}<{\Delta}G_{C-Si}$. Although there are some difference in grain size, shape and nucleated size, the thin films on A-Si and B-Si were diamond including a small amount of DLC which was confirmed by AES, SEM, XRD, and RHEED. Namely, the diamonds of films (B) were not nucleated in scratches but in dents and larger in grain size compare with the film (C) of which diamond sere nucleated not only scratches but also dents. And, the sphere diamond which is not general shape was grown on C-Si. After all, the sphere was turned out to be the diamond including much graphite as a result of the AES in situ depth profiling. Consequently, the diamond shape and quality grown on Si were Changed from the crystal which the (100) and (110) planes were predominent to the crystal in which (111) plane was predominent, and newt to sphere shape diamond including much graphite according as the nucleation free energy increases.

• Journal of the Korean institute of surface engineering
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• v.50 no.3
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• pp.219-224
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• 2017

The K gettering in $SiO_2/PSG/SiO_2/Al-1%Si$ multilevel thin films was investigated using SIMS(secondary ion mass spectrometry) and XPS(X-ray Photoelectron Spectroscopy) analysis. DC magnetron sputter techniques and APCVD(atmosphere pressure chemical vapor deposition) were utilized for the deposition of Al-1%Si thin films and $SiO_2/PSG/SiO_2$ passivations, respectively. Heat treatment was carried out at $400^{\circ}C$ for 5 h in air. SIMS depth profiling was used to determine the distribution of K, Al, Si, P and other elements throughout the $SiO_2/PSG/SiO_2/Al-1%Si$ multilevel thin films. XPS was used to analyze binding energies of Si and P elements in PSG passivation layers. K peaks were observed throughout the $PSG/SiO_2$ passivation layers on the Al-1%Si thin films and especially at the $PSG/SiO_2$ interfaces. K gettering in $SiO_2/PSG/SiO_2/Al-1%Si$ multilevel thin films is considered to be caused by a segregation type of gettering. The chemical state of Si and P elements in PSG passivation appears to be $SiO_2$ and $P_2O_5$, respectively

• Bulletin of the Korean Chemical Society
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• v.23 no.2
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• pp.225-228
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• 2002

Amorphous $Ga_2O_3$ films have been grown on Si(100) substrates by metal organic chemical vapor deposition (MOCVD) using gallium isopropoxide, $Ga(O^iPr)_3$, as single precursor. Deposition was carried out in the substrate temperature range 400-800 $^{\circ}C$. X-ray photoelectron spectroscopy (XPS) analysis revealed deposition of stoichiometric $Ga_2O_3$ thin films at 500-600 $^{\circ}C$. XPS depth profiling by $Ar^+$ ion sputtering indicated that carbon contamination exists mostly in the surface region with less than 3.5% content in the film. Microscopic images of the films by scanning electron microscopy (SEM) and atomic force microscopy (AFM) showed formation of grains of approximately 20-40 nm in size on the film surfaces. The root-mean-square surface roughness from an AFM image was ${\sim}10{\AA}$. The interfacial layer of the $Ga_2O_3$/Si was measured to be ${\sim}35{\AA}$ thick by cross-sectional transmission electron microscopy (TEM). From the analysis of gaseous products of the CVD reaction by gas chromatography-mass spectrometry (GC-MS), an effort was made to explain the CVD mechanism.

• Korean Journal of Materials Research
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• v.13 no.1
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• pp.43-47
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• 2003

As and BF$_2$dopants are implanted for the formation of source/drain with dose of 1${\times}$10$^{15}$ ions/$\textrm{cm}^2$∼5${\times}$10$^{15}$ ions/$\textrm{cm}^2$ then formed cobalt disilicide with Co/Ti deposition and doubly rapid thermal annealing. Appropriate ion implantation and cobalt salicide process are employed to meet the sub-0.13 $\mu\textrm{m}$ CMOS devices. We investigated the process results of sheet resistance, dopant redistribution, and surface-interface microstructure with a four-point probe, a secondary ion mass spectroscope(SIMS), a scanning probe microscope (SPM), and a cross sectional transmission electron microscope(TEM), respectively. Sheet resistance increased to 8%∼12% as dose increased in $CoSi_2$$n^{＋}$ and $CoSi_2$$p^{V}$ , while sheet resistance uniformity showed very little variation. SIMS depth profiling revealed that the diffusion of As and B was enhanced as dose increased in $CoSi_2$$n^{＋}$ and $CoSi_2$$p^{＋}$ . The surface roughness of root mean square(RMS) values measured by a SPM decreased as dose increased in $CoSi_2$$n^{＋}$ , while little variation was observed in $CoSi_2$$p^{＋}$ . Cross sectional TEM images showed that the spikes of 30 nm∼50 nm-depth were formed at the interfaces of $CoSi_2$$n^{＋}$ / and $CoSi_2$/$p^{＋}$, which indicate the possible leakage current source. Our result implied that Co/Ti cobalt salicide was compatible with high dose sub-0.13$\mu\textrm{m}$ process.

• Korean Journal of Materials Research
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• v.23 no.6
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• pp.334-338
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• 2013

In this study, $BaTiO_3$ thin films were grown by RF-magnetron sputtering, and the effects of the thin film thickness on the structural characteristics of $BaTiO_3$ thin films were systematically investigated. Instead of the oxide substrates generally used for the growth of $BaTiO_3$ thin films, p-Si substrates which are widely used in the current semiconductor processing, were used in this study in order to pursue high efficiency in device integration processing. For the crystallization of the grown thin films, annealing was carried out in air, and the annealing temperature was varied from $700^{\circ}C$. The changed thickness was within 200 nm~1200 nm. The XRD results showed that the best crystal quality was obtained for ample thicknesses 700 nm~1200 nm. The SEM analysis revealed that Si/$BaTiO_3$ are good quality interface characteristics within 300 nm when observed thickness. And surface roughness observed of $BaTiO_3$ thin films from AFM measurement are good quality surface characteristics within 300 nm. Depth-profiling analysis through GDS (glow discharge spectrometer) showed that the stoichiometric composition could be maintained. The results obtained in this study clearly revealed $BaTiO_3$ thin films grown on a p-Si substrate such as thin film thickness. The optimum thickness was 300 nm, the thin film was found to have the characteristics of thin film with good electrical properties.

• Journal of the Korean institute of surface engineering
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• v.51 no.2
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• pp.110-115
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• 2018

The Na low temperature gettering in $SiO_2/PSG/SiO_2/Al-1%Si$ and $SiO_2/TEOS/SiO_2/Al-1%Si$ multilevel thin films was investigated using dynamic SIMS(secondary ion mass spectrometry) analysis. DC magnetron sputter, APCVD and PECVD techniques were utilized for the deposition of Al-1%Si thin films, $SiO_2/PSG/SiO_2$ and $SiO_2/TEOS/SiO_2$ passivations, respectively. Heat treatment was carried out at $300^{\circ}C$ for 5 h in air. SIMS depth profiling was used to determine the distribution of Na, Al, Si and other elements throughout the $SiO_2/PSG/SiO_2/Al-1%Si$ and $SiO_2/TEOS/SiO_2/Al-1%Si$ multilevel thin films. XPS was used to analyze chemical states of Si and O elements in $SiO_2$ passivation layers. Na peaks were observed throughout the $PSG/SiO_2$ and $TEOS/SiO_2$ passivation layers on the Al-1%Si thin films and especially at the interfaces. Na low temperature gettering in $SiO_2/PSG/SiO_2/Al-1%Si$ and $SiO_2/TEOS/SiO_2/Al-1%Si$ multilevel thin films is considered to be caused by a segregation type of gettering.

• Journal of Korean Society of Coastal and Ocean Engineers
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• v.7 no.3
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• pp.277-288
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• 1995

Prediction of turbidity due to fine-grained bed material load under wave action is critical to any assessment of anthropogenic impart on the coastal or lacustrine environment Waves tend to loosen mud deposits and generate steep suspension concentration gradients, such that the sediment load near the bottom is typically orders of magnitude higher than that near the surface. In a physically realistic but simplified manner, a simple mass conservation principle has been used to simulate the evolution of fine sediment concentration profiles and corresponding erodible bed depths under progressive, nonbreaking wave action over mud deposits. Prior field observations support the simulated trends. which reveal the genesis of a near-bed. high concentration fluidized mud layer coupled with very low surficial sediment concentrations. It is concluded that estimation of the depth of bottom erosion requires an understanding of mud dynamics and competent in situ sediment concentration profiling. Measurement of sediment concentration at the surface alone, without regard to the near-bed zone, can lead to gross underestimation of the erodible bed depth.

• Economic and Environmental Geology
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• v.34 no.2
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• pp.193-204
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• 2001

A geophysical survey was undertaken at Wiri area, Andong, to delineate subsurface structure and reveal the fault zone nearby which heaving of road and subsidence of slope occurred in 1997, especially in the heavy rainy season. Electrical resistivity methods of dipole-dipole array profiling and Schlumberger array sounding and seismic methods of refraction and reflection were performed for the mapping of clay layer, which was interpreted to be the major factor among the reasons of slope deformation. The clay layer was characterized by lower electrical resistivities (< $100{\Omega}{\cdot}m$) and lower seismic velocities (<400 m/s), respectively. The results of electrical and seismic surveys showed that subsidence of slope was probably associated with sliding of wet clay on 18SW/NNW trending fault plane, while heaving of road was probably caused by upward movement of the wet clay through subvertical NNE trending fault.