• 제목/요약/키워드: Surface Passivation

검색결과 362건 처리시간 0.031초

$(NH_4)_2S_x$ 처리한 AlGaAs 표면의 열처리에 따른 passivation 효과에 대한 방사광 가속기를 이용한 X-선 광전자 분석 연구 (A study on the X-ray Photoelectron Spectroscopy using Synchrotron Radiation for the effect of passivation with annealing in $(NH_4)_2S_x$-treated AlGaAs Surface)

  • 류성욱;오정우;한상윤;최경진;김종규;이종람;김기정;강태희;김봉수
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 1999년도 추계학술발표강연 및 논문개요집
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    • pp.139-139
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    • 1999
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알루미늄합금 재료의 산화막 형성이 피로거동에 미치는 영향 (Effect of Oxide Film Formation on the Fatigue Behavior of Aluminum Alloy)

  • 김종천;정성균
    • 대한기계학회논문집A
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    • 제36권4호
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    • pp.421-428
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    • 2012
  • 본 논문에서는 알루미늄 7075-T6 재료의 부식 기간별 표면 산화막 형성이 피로거동에 미치는 영향에 대해 연구하였다. 사용된 알루미늄 재료는 부식에 대한 부동태화 현상으로 부식저항 특성이 높은 금속으로 알려져 있다. 알루미늄 합금은 다른 재료에 비해 가볍고 강한 재료 특성 때문에 항공기 부품 산업과 같은 다양한 산업분야에서 널리 사용되고 있다. 때문에 부식에 대한 재료의 피로거동 특성과 부식에 대한 부동태화 특성에 대한 연구가 요구된다. 4절점 회전 굽힘 시험기를 사용하여 부식 기간별 재료의 피로거동 특성을 확인하였고, 표면 거칠기를 측정하여 부식 기간별 알루미늄 재료의 표면 부식 정도를 평가하였다. 또한 전자주사현미경을 통해 파단면 분석 및 재료 표면에 형성된 산화막을 측정하였다. 실험결과 초기 부식 4주 동안은 부식이 활발히 진행되어 피로수명은 크게 감소하고 표면 거칠기는 증가하였다. 하지만 4주 이후부터 재료의 부동태화 현상으로 부식 반응이 둔화되는 경향을 보였다. 전자주사현미경을 통한 분석에서도 표면 산화막의 성장이 4주 이후부터 둔화되어 재료 표면의 산화막이 보호층 역할을 하여 더 이상의 부식진행을 방지한다는 결론은 얻었다.

Chemical HF Treatment for Rear Surface Passivation of Crystalline Silicon Solar Cells

  • Choi, Jeong-Ho;Roh, Si-Cheol;Jung, Jong-Dae;Seo, Hwa-Il
    • Transactions on Electrical and Electronic Materials
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    • 제14권4호
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    • pp.203-207
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    • 2013
  • P-type Si wafers were dipped in HF solution. The minority carrier lifetime (lifetime) increased after HF treatment due to the hydrogen termination effect. To investigate the film passivation effect, PECVD was used to deposit $SiN_x$ on both HF-treated and untreated wafers. $SiN_x$ generally helped to improve the lifetime. A thermal process at $850^{\circ}C$ reduced the lifetime of all wafers because of the dehydrogenation at high temperature. However, the HF-treated wafers showed better lifetime than untreated wafers. PERCs both passivated and not passivated by HF treatment were fabricated on the rear side, and their characteristics were measured. The short-circuit current density and the open-circuit voltage were improved due to the effectively increased lifetime by HF treatment.

금속 코발트의 부식과 부동화에 관한 연구 (A Study on Corrosion and Passivation of Cobalt)

  • 천정균;백운기
    • 대한화학회지
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    • 제18권6호
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    • pp.391-399
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    • 1974
  • 금속 코발트의 부식과 부동화현상들을 전기화학적 실험방법들을 써서 연구하였다. Tafel slope, Flade potential의 pH의존도, 부식속도의 반응역학적 데이타등으로 부터 코발트와 붕산염완충용액 사이 계면에서 일어나는 부식과 부동화 과정들의 메카니즘을 도출하였다. 금속표면에 흡착된 히드록실기가 표면산화와 부동화막의 형성에 참여하는 것으로 나타났다. 표면막의 성장속도에 관한 데이타로 보아 부동화피막은 "전기장에 의한-이온-이동" 과정에 의하여 성장하는 것으로 보인다. 측정된 표면막의 두께는 약 10${\AA}$에서 20${\AA}$에 이르렀다.

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Dynamic Electrochemical Impedance Spectroscopy를 이용한 스테인리스 강의 계면 저항 분석 (In-depth Investigation on Interfacial Resistance of Stainless Steel by Using Dynamic Electrochemical Impedance Spectroscopy)

  • 허정호;이용헌;신헌철
    • 대한금속재료학회지
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    • 제47권10호
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    • pp.644-651
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    • 2009
  • The passivation (or deactivation) of a metal surface during oxide film formation has been quantitatively explored for a ferritic stainless steel by using dynamic electrochemical impedance spectroscopy (DEIS). For this purpose, the electrochemical impedance spectra were carefully examined as a function of applied potential in the active nose region of the potentiodynamic polarization curve, to separate the charge transfer resistance and oxide film resistance. From the discrepancy in the potential dependence between the experimental charge transfer resistance and the semi-empirically expected one, the degree of passivation could be quantitatively estimated. The sensitivity of passivation of the steel surface to anodic potential, which might be the measure of the quality of the oxide film formed under unit driving force or over-potential, decreased by 31% when 3.5 wt% NaCl was added to a 5 wt% $H_2SO_4$ solution.

황화 암모늄을 이용한 Al2O3/HfO2 다층 게이트 절연막 트랜지스터 전기적 및 계면적 특성 향상 연구 (Improvement of the carrier transport property and interfacial behavior in InGaAs quantum well Metal-Oxide-Semiconductor Field-Effect-Transistors with sulfur passivation)

  • 김준규;김대현
    • 센서학회지
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    • 제29권4호
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    • pp.266-269
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    • 2020
  • In this study, we investigated the effect of a sulfur passivation (S-passivation) process step on the electrical properties of surface-channel In0.7Ga0.3As quantum-well (QW) metal-oxide-semiconductor field-effect transistors (MOSFETs) with S/D regrowth contacts. We fabricated long-channel In0.7Ga0.3As QW MOSFETs with and without (NH4)2S treatment and then deposited 1/4 nm of Al2O3/HfO2 through atomic layer deposition. The devices with S-passivation exhibited lower values of subthreshold swing (74 mV/decade) and drain-induced barrier lowering (19 mV/V) than the devices without S-passivation. A conductance method was applied, and a low value of interface trap density Dit (2.83×1012 cm-2eV-1) was obtained for the devices with S-passivation. Based on these results, interface traps between InGaAs and high-κ are other defect sources that need to be considered in future studies to improve III-V microsensor sensing platforms.

에너제틱 금속입자 제조 및 안정화 기술 (Preparation of Energetic Metal Particles and Their Stabilization)

  • 이혜문;김경태;양상선;유지훈;김용진
    • 한국입자에어로졸학회지
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    • 제9권3호
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    • pp.173-185
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    • 2013
  • Oxidations of metal generate large quantity of thermal and light energies but no toxic pollutants, so that metals with high calorific values, such as beryllium, boron, aluminum, magnesium, and lithium, are possible to be used as clean fuels instead of fossil fuels. However, they are so explosive due to very high oxidation rates that they should be stabilized by their surface passivation with oxides, organics and inorganics. For reasonable use of energetic metal particles as solid fuel, therefore, some detail information, such as thermal properties, preparation and passivation methods, and application area, of the energetic metals is introduced in this manuscript.

Transparent organic light-emitting devices with CsCl passivation layer

  • Kim, So-Youn;Lee, Chan-Jae;Ha, Mi-Young;Moon, Dae-gyu;Han, Jeong-In
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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    • pp.683-686
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    • 2007
  • We have developed the transparent passivation layer for transparent organic light-emitting devices (TOLEDs) using CsCl layer. The CsCl passivation layer improves the optical transmittance of Ca/Ag double layer which have used as a semitransparent cathode, resulting in substantial increase of the luminance by the enhanced light extraction out of the cathode surface of the TOLEDs.

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Performance of an InAs/GaSb Type-II Superlattice Photodiode with Si3N4 Surface Passivation

  • Kim, Ha Sul
    • Current Optics and Photonics
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    • 제5권2호
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    • pp.129-133
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    • 2021
  • This study observed the performance of an InAs/GaSb type-II superlattice photodiode with a p-i-n structure for mid-wavelength infrared detection. The 10 ML InAs/10 ML GaSb type-II superlattice photodiode was grown using molecular beam epitaxy. The cutoff wavelength of the manufactured photodiode with Si3N4 passivation on the mesa sidewall was determined to be approximately 5.4 and 5.5 ㎛ at 30 K and 77 K, respectively. At a bias of -50 mV, the dark-current density for the Si3N4-passivated diode was measured to be 7.9 × 10-5 and 1.1 × 10-4 A/㎠ at 77 K and 100 K, respectively. The differential resistance-area product RdA at a bias of -0.15 V was 1481 and 1056 Ω ㎠ at 77 K and 100 K, respectively. The measured detectivity from a blackbody source at 800 K was calculated to be 1.1 × 1010 cm Hz1/2/W at zero bias and 77 K.

Studies of the Passivation Film as a Function of the Concentration of Electrolyte in Lithium-ion Battery

  • 정광일;정명우;김우성;김신국;성용은;최용국
    • Bulletin of the Korean Chemical Society
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    • 제22권2호
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    • pp.189-193
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    • 2001
  • The irreversible capacities caused by the reduction of solvent on the surface of a negative electrode (KMFC:Kawasaki Mesophase Fine Carbon) were examined during the initial cycle in ethylene carbonate (EC)-diethyl carbonate (DEC) electrolyte solut ions at various concentrations of LiPF6. Chronopotentiograms, linear sweep voltammograms, and impedance spectra clearly showed differences in irreversible capacity and that those differences are related to the concentration of electrolyte during the initial charge. These differences were caused by the amount of solvent decomposition as a function of the concentration of LiPF6 electrolytic salt. The data are discussed with reference to the concentration of electrolytic salt and the properties of passivation film formed by solvent decomposition.