• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1291-1293
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• 2005

Hybrid insulator pentacene thin film transistors (TFTs) were fabricated with thermally grown oxide and cross-linked polyvinylalcohol (PVA) including surface treatment by dilute ploymethylmethacrylate (PMMA) layers on $n^+$ doped silicon wafer. Through the optimization of $SiO_2$ layer thickness in hybrid insulator structure, carrier mobility was increased to above 35 times than that of the TFT only with the gate insulator of $SiO_2$ at the same transverse electric field. The carrier mobility of 1.80 $cm^2$/V-s, subthreshold swing of 1.81 V/decade, and $I_{on}$/ $I_{off}$ current ratio > 1.10 × $10^5$ were obtained at low bias (less than -30 V) condition. The result is one of the best reported performances of pentacne TFTs with hybrid insulator including cross-linked PVA material at low voltage operation.

• Particle and aerosol research
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• v.5 no.2
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• pp.83-90
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• 2009

This paper describes a condensation-evaporation method (CEM) to produce size-controlled spherical silver nanoparticles by perturbing coagulation and coalescence processes in the gas phase. Polydisperse silver nanoparticles generated by the CEM were first introduced into a differential mobility analyzer (DMA) to select a group of silver nanoparticles with same electrical mobility, which also enables to make a group of nanoparticles with elongated structures and same projected area. These silver nanoparticles selected by the DMA were then in-situ sintered at ${\sim}600^{\circ}C$, and then they were observed to turn into spherical shaped nanoparticles by the rapid coalescence process. With the assistance of modified converging-typed quartz reactor, we can also produce the 10 times higher number concentration of silver nanoparticles compared with a general quartz reactor with uniform diameter. Finally, the spherical silver nanoparticles with 30 nm were electrostatically deposited on the surface of silicon substrate with the coverage rate of ~4%/hr. This useful preparation method of size-controlled monodisperse silver nanoparticles developed in this work can be applied to the various studies for characterizing the physical, chemical, optical, and biological properties of nanoparticles as a function of their size.

• Polymer(Korea)
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• v.24 no.1
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• pp.23-28
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• 2000

Autoadhesion strength of PS/PS Interfaces in solvent welding was determined as a function of processing conditions by butt joint test. It was verified that the chain mobility and surface roughness at PS/PS interface were enhanced by the applied solvent having a similar solubility parameter as PS and resulted in the dramatic improvement of autoadhesion strength at PS/PS interface. It was found that the mechanism of solvent welding is dependent upon the chain mobility due to the diffusion of solvent to PS interface and the contact area at interface. When the welding temperature is lower than the boiling point of applied solvent, the effect of chain mobility on autoadhesion strength was dominated, while contact area took more important role when welding temperature is above the boiling point of solvent. Autoadhesion strength increased with increasing contact time and contact temperature but :he effect of solvent on autoadhesion strength became smaller.

• Proceedings of the KIEE Conference
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• 2001.11a
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• pp.6-8
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• 2001

This report describes the effect of the blending of poly(trifluoropropylmethylvinylsiloxane) (PTFPMVS) with poly(dimethylsiloxane) (PDMS) on the surface properties such as water repellency using dynamic contact angle (DCA) measurement. We have investigated the surface molecular mobility of the PDMS/PTFPMVS blends via a DCA measurement and an adhesion tension relaxation. It could be shown that a flexible side-chain segment in PTFPMVS having higher surface energy, could be reoriented easily in water to decrease the interfacial tension of the polymer/water interface, which seems to play a major role at the decrease of the receding contact angle and the surface resistivity of PDMS/PTFPMVS blends.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1771-1773
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• 2007

Surface modification of the gate dielectric has a strong influence on the performance of printed transistors. The surface modification occurs between the gate dielectric and semiconductor. The printed transistor with evaporated vanadium pentoxide ($V_2O_5$) modification exhibits a mobility of $0.2cm^2\;V^{-1}\;s{-1}$ and a subthreshold slope of 1.47 V/decade.

• 제어로봇시스템학회:학술대회논문집
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• 2001.10a
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• pp.38.3-38
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• 2001

In the planetary surface exploration , micro-rovers or nano-rovers are very attractive choices for a surface exploration system providing mobility functions and other features required in the surface probe missions at small mass and relatively small cost. This paper surveys and summarizes the requirements for Mars exploration rovers in micro or nano scale and outlines the control concepts for navigation including the obstacle/hazard avoidance and the path planning. In this context, autonomous reaction capabilities are the key elements to control design in conjunction with the remote control schemes to deal with the significant signal propagation delays. Other navigation and control aspects such as the instrument fine positioning and the flip-over of the rovers are also briefly introduced. The current technical limitations of the micro- and nano-rovers are summarized.

• Journal of the Korean institute of surface engineering
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• v.41 no.6
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• pp.287-291
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• 2008

Reactively magnetron sputtered TiN films were deposited on Si wafers under varying bias voltage and characterized by X-ray diffraction, field-emission scanning electron microscopy and Nanoindentation. The films deposited under an Ar + $N_2$ atmosphere exhibited a mixed (200)-(111) orientation with a strong (200) texture, which subsequently changed to a strong (111) texture with increasing bias voltage. The changes in texture and grain size of the TiN thin films are due to one or a combination of factors such as strain energy, surface free energy, surface diffusivity and adatom mobility. The influence of each factor depends on the processing conditions. The average deposition rate and grain size were calculated from FE-SEM images of the films indicating that the deposition rate was lower at the films deposited under bias voltage.

• Journal of the Korean institute of surface engineering
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• v.24 no.2
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• pp.73-79
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• 1991

Recent studies son surface coatings have shown that the change of physical, chemical and crystallographic structure analysed and observed according to the deposition process variables has the effects on the resultant film properties. Under the same preparation condition conditions of the substrate and process variables, physical morphology variations characterized by substrate temperature and bias which offect the surface mobility of adatom and adhesion variations related to the formation of Ti interlayer were considered in the present study. Microhardness showed the highest value around 40$0^{\circ}C$ of the substrate temperature and increased with the substrate bias. Adhesion was improved with the increase of substrate temperature and bias. An interlayer of pure titanium formed prior to deposition of TiN improves the adhesion at its optimum thickness. These results were explained by the change of physical morphology and phase analysis.

• Journal of the Korean institute of surface engineering
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• v.35 no.2
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• pp.113-121
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• 2002

We have investigated insulating properties of $SiO_2$ interlayer for the thin film strain gauge, which were prepared by RF magnetron sputtering method in various deposition conditions, such as Ar pressure, gas flow rates and sputtering gases. SEM, AFM and FT-IR techniques were used to analyze its structures and composition. As the Ar pressure and the flow rate increased, the insulating interlayer showed low insulating resistance due to its porous structure and defects. Oxygen deficiency in $SiO_2$ was decreased as fabricated by hydrogen reactive sputtering. We could enhance the surface mobility of sputtered adatoms by using Ar/$H_2$ sputtering gas and obtain a good surface roughness and insulating property. The optimum insulating resistance of 9.22 G$\Omega$ was obtained in Ar/30% $H_2$ mixed gas, flow rate 10sccm, and 1mTorr.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.04a
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• pp.145-146
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• 2007

Cr-Si-N 박막은 하이브리드 코팅 시스템에 의해 온도와 바이어스의 변화에 따라 증착 되었다. 증착온도 $0{\sim}300^{\circ}C$ 범위에서, 경도와 탄성계수는 이온의 surface mobility의 증가 때문에 향상되었지만 $350^{\circ}C$ 이상의 증착 온도에서는 결정성장 때문에 경도는 다시 감소하였다. 바이어스 $0{\sim}-100V$까지 범위에서는, 경도와 탄성계수는 각각 46GPa, 600GPa의 최대값을 보여주었으며 바이어스 -100V에서 macro-particle과 surface molphology 감소가 발생하였다. 그러나 -100V이상의 바이어스에서 resputtering 현상에 의해 Si 의 양이 감소한다. 증착온도는 Si 함량에 많은 영향을 주지 못한다.