한국정보디스플레이학회:학술대회논문집
- 2007.08b
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- Pages.1771-1773
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- 2007
Effect of Surface-Modified Poly (4-vinyl phenol) Gate Dielectric on Printed Thin Film Transistor
- Sung, Chao-Feng (Display technology center, Industrial Technology Research Institute, Chutung/Hsinchu 310) ;
- Tsai, Hsuan-Ming (Display technology center, Industrial Technology Research Institute, Chutung/Hsinchu 310) ;
- Lee, Yuh-Zheng (Display technology center, Industrial Technology Research Institute, Chutung/Hsinchu 310) ;
- Cheng, Kevin (Display technology center, Industrial Technology Research Institute, Chutung/Hsinchu 310)
- Published : 2007.08.27
Abstract
Surface modification of the gate dielectric has a strong influence on the performance of printed transistors. The surface modification occurs between the gate dielectric and semiconductor. The printed transistor with evaporated vanadium pentoxide (