• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.571-574
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• 2003

The thin films fabricated by using the layer-by-layer sputtering was compared with the thin film fabricated by using the evaporation method. Re-evaporation in the form of Bi atoms or $Bi_2O_3$ molecules easily bring out the deficiency of Bi atoms in thin film due to the long sputtering time of the layer-by-layer deposition. On the other hand, the respective atom numbers corresponding to BiSrCaCuO phase is concurrently supplied on the film surface in the evaporation deposition process and leads to BiSrCaCuO phase formation. Also, it is cofirmed that by optimizing the deposition condition, each single phase of the Bi2201 phase and the Bi2212 phase can be fabricated, the sticking coefficient of Bi element is clearly related to the changing of substrate temperature and the formation of the Bi2212 phase.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.213-216
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• 1999

BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element exhibits a characteristics temperature dependence : almost a constant value of 0.49 below 730$^{\circ}C$ and decreases linearly with temperature over 730$^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, Bi$_2$O$_3$ from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi(2212) phase formation in the co-deposition process.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2002.02a
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• pp.368-370
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• 2002

We present current limiting properties of 1.2kV/70A superconducting fault current limiter based on YBCO thin films. This is consisted of 6 wafers (3 parallel $\times$ 2 serial connection) with 4 inch-diameter YBCO thin film. The quench current Iq of the switching elements vary between 33.9 and 35.6 A. Within the difference of 0.5 A in the sum of quench current Iq in two stacks, the serial connection of the stacks showed the simultaneous quench behavior in applied power of 1.2 kV/70A.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.259-260
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• 2006

$Bi_2Sr_2Ca_{n-1}Cu_nO_x$ superconducting thin films have been fabricated by atomic layer-by-layer deposition using IBS(Ion Beam Sputtering) method During the deposition, 90 mol% ozone gas of typical pressure of $1{\sim}9{\times}10^{-5}$ T orr are supplied with ultraviolet light irradiation for oxidation. XRD and RHEED investigations reveal out that a buffer layer with some different compositions is formed at the early deposition stage of less than 10 units cell and then Bi-2201 oriented along the c-axis is grown.

• 한국초전도학회:학술대회논문집
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• v.10
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• pp.41-44
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• 2000

The mixed-state Hall angle has been measured in Hg-based superconducting thin films as functions of magnetic fields (H) up to 18 T. The temperature dependence of the Hall angle shows a peak (T$^{\ast}$) at low temperature, which is consistent with a crossover point from the thermally activated flux flow (TAFF) to a critical region (CR). At low fields below 10 T, T$^{\ast}$ shifts to low temperature with increasing fields. Interestingly, however, we found that T$^{\ast}$ is independent of fields above 10 T, suggesting unusual vortex state. A physical implication of H - T$^{\ast}$ line will be discussed.

• Progress in Superconductivity
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• v.2 no.1
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• pp.39-42
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• 2000

The mixed-state Hall angle has been measured in Hg-based superconducting thin films as functions of magnetic fields (H) up to 18 T. The temperature dependence of the Hall angle shows a peak (T*) at low temperature, which is consistent with a crossover point from the thermally activated flux flow (TAFF) to a critical region (CR). At low fields below 10 T, T* shifts to low temperature with increasing fields. Interestingly, however, we found that T* is independent of fields above 10 T, suggesting unusual vortex state. A physical implication of H-T* line will be discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.329-330
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• 2005

Bi-Sr-Ca-Cu-O thin films have been fabricated by sputter deposition method. During the deposition, 10 and 90 wt%-ozone/oxygen mixture gas of typical pressure of $1\sim9\times10^{-5}$ Torr are supplied with ultraviolet light irradiation for oxidation. XRD and RHEED investigations reveal out that a buffer layer with some different compositions is formed at the early deposition stage of less than 10 units cell and then Bi-2201 oriented along the c-axis is grown.

• Progress in Superconductivity and Cryogenics
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• v.22 no.4
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• pp.10-13
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• 2020

High-quality superconducting coplanar waveguide (SCPW) resonators are crucial for developing superconducting quantum information devices and sensors. We designed quarter-wavelength SCPW resonators and fabricated the SCPW resonators using Nb thin film. The resonant characteristics were measured at T = 4.2 K, revealing the intrinsic quality factor and the coupling quality factor to be Qi = 4,784 and Qc = 17, 980, respectively. Our design and fabrication techniques would be very useful to develop a gate-tunable superconducting qubit based on the semiconductor nanostructures.

• Korean Journal of Materials Research
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• v.7 no.5
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• pp.431-433
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• 1997

We investigated a double ring resonator(DRR)device to improve the resonating Q value of a superconductor resonator. To make a DRR device, we made a large area YBCO film on a MgO substrate by pulsed laser deposition(PLD). Thetransition temperature was 88 K and the film was uniformly deposited. We also deposited 500$\AA$SrTiO$_{3}$on the YBCO thin film to protect the superconducting properties from degradation. The loaded Q value was measured as 50000 from simulation and as 2000 from experiment near 10GHz at 77K.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.39 no.12
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• pp.1239-1245
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• 1990

With the rapid growth of power system capacity, fault current levels approach the maximum capacity of circuit breakers. In this paper, a superconducting current limiter (SCL) is proposed to reduce the fault current to an appropriate level. Superconductor for SCL has been examined and design criterion of each triggering method has been shown. Thin film SCL has been fabricated and switching characteristics are shown, where thermal and current triggering methods are adopted. Experimental result shows that fault current is reduced to one-half.