• 한국전자통신학회논문지
• /
• 제9권12호
• /
• pp.1331-1336
• /
• 2014

본 논문은 X대역 고출력증폭기의 전력 결합 손실을 최소화 하기위하여 Al2O3 박막 기판으로 제작한 divider/Combiner 회로를 X-대역의 PAM(Power Amplifier Module)에 적용하여 25W 급 전력증폭기 모듈을 구현하였다. 제작은 MMIC 칩과 수정된 형태의 10way traveling wave divider/Combiner회로를 사용하였으며 제작된 Traveling wave구조의 전력증폭기는 출력전력 45.2dBm, 16dB 이득, PAE 26 % 특성을 얻었으며 IMD3 는 17dBc@44dBm의 특성을 보였다. 본 연구의 divider/Combiner 회로는 다단계 구조의수동 결합기 및 분배기에 사용될 수있으며 협소한 크기의 전력증폭기에 사용될 수 있다.

• 한국전자통신학회논문지
• /
• 제2권4호
• /
• pp.199-202
• /
• 2007

본 논문에서는 UHF 대역(860~960 MHz의 수동 RFID 태그 안테나 제안하여 해석하였다. 제안한 안테나는 루프구조에 의한 UHF 대역 초소형 수동 RFID 태그 안테나이다. 제안한 안테나는 단일 평면 구조 형태로 인쇄 기판에 손쉽게 인쇄할 수 있어 생산비 절감을 통한 대량 생산이 용이하며, Pareto 유전자 알고리즘과 IE3D 시뮬레이션 툴로 최적화하여 안테나의 크기를 소형화 하였다. 최적화 한 RFID 태그 안테나의 성능을 검증하기 위하여 몇 개의 표본 안테나를 제작하고 반사 손실, 복사 효율, 복사 패턴 등을 측정하였다. 상용태그 와 고정형 리더 시스템을 이용하여 제작된 태그 안테나의 인식 거리를 측정하였고, 약 1~3 m의 인식거리를 가지는 것을 확인하였다.

• 한국전자통신학회논문지
• /
• 제12권4호
• /
• pp.549-554
• /
• 2017

본 논문에서는 5GHz 대역의 $2{\times}2$ 배열 안테나를 연구하였다. 선로 방식으로는 마이크로 스트립 방식을 채택하였고 안테나 제작 및 특성을 측정하였다. 각 선로방식의 안테나에 대한 주파수와 반사손실에 관한 파라미터 특성을 HFSS(High Frequency Structure Simulator)를 통해 분석하고 이것을 이용하여 안테나를 설계하였다. 시뮬레이션 결과를 바탕으로 $2{\times}2$ 마이크로스트립 배열 안테나를 설계하고, 유전율 4.4, 두께 1.6mm인 FR4-epoxy 기판을 사용 하여 포토리소그래피 방법으로 안테나를 제작하였다. 제작된 $2{\times}2$ 배열 안테나는 중심 주파수 5.3GHz, 입력반사손실 -24dB, 대역폭 390MHz 의 동작특성을 보였다.

• 한국세라믹학회지
• /
• 제33권6호
• /
• pp.665-671
• /
• 1996

Ferroelectric Pb(Fe1/2Nb1/2)O3 thin films were successfully fabricated on ITO/Glass substrate by sol-gel proces-sing and characterized to determine the dielectric and electric properties. Viscosity of PEN sol measured to investigate rheological properties was 3.25 cP which was proper for coating. The sol also showed Newtonian behavior. RTA(Rapid Thermal Annealing) was used for the annealing of the thin film and 1200~1700$\AA$ thick PEN thin films were fabricated by repeating the intermediate and the final annealing. After the deposition of Pt as top electrode by vacuum evaporation dielectric and electric properties were measured. Dielectric properties of FFN thin film were enhanced by increasing the perovskite phase fraction with increasing the annealing temperature. Measured dielectric constant of 1700$\AA$ PFN thin film annealed at $650^{\circ}C$ was 890 at 1kHz Capacitatnce density and dielectric loss were 47 fF/${\mu}{\textrm}{m}$2 and 0.47 respectively. As a result of measuring Curie temperature PFN thin films had Curie point with a rang of 110~12$0^{\circ}C$ and showed broad dielectric peak at that point. Leakage current of the PFN thin films were increased with increasing the annealing tempera-ture.

• Journal of information and communication convergence engineering
• /
• 제18권3호
• /
• pp.162-166
• /
• 2020

The present paper presents an array antenna of a microstrip patch for 5G applications. Four rectangular microstrip patch elements are arranged in parallel and series to form an array antenna. Two insets are made on both sides of each patch element to achieve a wide frequency bandwidth of 23.97-31.60 GHz. To attain a high gain and wider bandwidth, the microstrip patch antenna is fed using series and corporate feeding networks. Further, three director elements on top of the top-most patch elements, and one reflector element at the open end of each patch element, are added. The addition of the Yagi elements improved the overall gain and acquired a higher radiation efficiency throughout the operating frequency bandwidth, with the array antenna achieving a maximum peak gain of 8.7 dB. The proposed antenna is built on a low-loss and low-cost substrate of FR4-eproxy. The proposed antenna design with a simple structure is suitable for Internet of Things and 5G applications.

• 대한전기학회논문지
• /
• 제44권7호
• /
• pp.914-918
• /
• 1995

In this study, Pb(Zr$_{x}$ Ti$_{1-x}$ )O$_{3}$ (x=0.65, 0.52, 0.35) thin films were fabricated by Sol-Gel method. A stock solution with excess Pb 10[mol%] of Pb(Zr$_{x}$ Ti$_{1-x}$ )O$_{3}$ was made and spin-coated on the Pt/SiO$_{2}$/Si substrate at 4000[rpm] for 30[sec.]. Coated specimens were dried on the hot-plate at 400[.deg. C] for 10[min.]. Sintering temperature and time were 500~800[.deg. C] and 1~60[min.]. The coating process was repeated 6 times and the final thickness of the thin films were about 4800[A]. To investigate crystallization condition, PZT thin films were analyzed with sintering temperature, time and composition by the XRD. The microstructure of thin fulms were investigated by SEM. The ferroelectric perovskite phases precipitated under the sintering of 700[.deg. C] for 1 hours. In the PZT(52/48) composition, dielectric constant and dielectric loss were 2133, 2.2[%] at room temperature, respectively.ively.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2001년도 하계학술대회 논문집 C
• /
• pp.1340-1342
• /
• 2001

ZnO thin films are Prepared on Si(111) substrate by RF magnetron sputtering. Two-step deposition method is proposed to obtain ZnO thin films with high c-axis (002) TC value and electrical resistivity. This method consists of the following two-step deposition procedures: 1st-deposition for 10$\sim$30 min without oxygen at 100W and 2nd-deposition with oxygen added in the range of $O_2/(Ar+O_2)$ = 10 $\sim$ 50%. SAW filters with IDT/ZnO/Si(111) configuration are also fabricated. From the frequency response characteristics, the insertion loss and the side-lobe rejection are estimated.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
• /
• pp.623-626
• /
• 2004

[ $Ba_{0.6}Sr_{0.4}TiO_3$ ] (BST) dielectric thin films doped by Cr were prepared using an alkoxide-based sol-gel method on the Pt/Ti/SiO2/Si substrate. Atomic force microscopy and x-ray diffraction analysis showed that increasing the Cr doping ratio causes increased grain size while the surface remains smooth and crack-free. It was also found that compared with undoped films the increase of Cr content in BST improves the dielectric constant and the leakage-current characteristics. The figure of merit reached the maximum value of 72.3 at the 5 mol % of Cr doping. This composition showed the dielectric constant of 426, the loss factor of 0.0065, tenability of 47.7%, and leakage-current density (at the electric field of 100 kV/cm) of $5.31{\times}10^{-8}A/cm^2$. The results show that the Cr-doped BST thin films are prospective candidates for applications in tunable devices.

• 한국전기전자재료학회논문지
• /
• 제24권11호
• /
• pp.895-899
• /
• 2011

Multiferroic BFO/PZT(5/95) multilayer films were fabricated by spin-coating method on the Pt/Ti/$SiO_2$/Si substrate alternately using BFO and PZT(9/95) alkoxide solutions. The structural and dielectric properties were investigated with variation of the solvent and the number of coatings. All films showed the typical XRD patterns of the perovskite polycrystalline structure without presence of the second phase such as $Bi_2Fe_4O_3$. BFO/PZT multilayer thin films showed the typical dielectric relaxation properties with increase an applied frequency. The average thickness of 6-coated BFO/PZT multilayer film was about 600 nm. The dielectric properties such as dielectric constant, dielectric loss and remnant polarization were superior to those of single composition BFO film, and those values for BFO/PZT multilayer film were 1199, 0.23% and 12 ${\mu}C/cm^2$.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
• /
• pp.167-167
• /
• 2008

The barium strontium calcium titanate powders were prepared by sol-gel method. Ferroelectric $(Ba_{0.54}Sr_{0.36}Ca_{0.1})TiO_3$(BSCT) thick films were fabricated by the screen-printing method on alumina substrate. And we investigated the structural and dielectric properties of BSCT thick films with the variation of sintering temperature. As a result of thermal analysis, BSCT polycrystalline perovskite phase was formed at around $660^{\circ}C$. The results of X-ray diffraction analysis were showed a cubic perovskite structure without presence of the second phase in all BSCT thick films. The average grain size and the thickness of the specimen sintered at $1450^{\circ}C$ were about 1.6 mm and 45 mm, respectively. The relative dielectric constant increased and the dielectric loss decreased with increasing the sintering temperature, the values of the BSCT thick films sintered at $1450^{\circ}C$ were 5641 and 0.4% at 1kHz, respectively.