• Journal of Sensor Science and Technology
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• v.20 no.3
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• pp.145-150
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• 2011

In this paper, we designed a tunable microstrip patch antenna using RF MEMS switches. The design and simulation of the antenna were performed using a high frequency structure simulator(HFSS). The antenna was designed for use in the ISM band and either operates at 2.4 GHz or 5.7 GHz achieving -10 dB return-loss bandwidths of 20 MHz and 180 MHz, respectively. In order to obtain high efficiency and improve the ease of integration, a high resistivity silicon(HRS) wafer on a glass substrate was used for the antenna. The antenna achieved high gains: 8 dB at 5.7 GHz and 1 dB at 2.4 GHz. The RF MEMS DC contact switches were simulated and analyzed using ANSYS software.

• 한국초전도학회:학술대회논문집
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• v.10
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• pp.35-39
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• 2000

Large-area high-temperature superconducting (HTS) films, filter design and damage-free processing technique have been developed to fabricate low insertion loss and sharp skirt filters. Further, long life cryocooler, low temperature low noise amplifier (LNA) and cryocable have been developed to assemble HTS filter subsystem for IS-95 and IMT-2000 mobile telecommunication. The surface resistance of the films was about 0.2 milli-ohm at 70 K, 12 GHz. An 11-pole HTS filter for IS-95 telecommunication system and a 16-pole HTS filter for IMT-2000 telecommunication system were designed and fabricated using 60 {\times}$ 50 mm$^2$ and one half of 3-inch diameter YBCO films on a 0.5-mm-thick MgO substrate, respectively. We have assembled the filter and low temperature LNA in a dewar with the cryocooler. Ultra low-noise (noise figure: 0.5 dB at 70 K) and ultra sharp-skirt (40 dB/1.5 MHz) performance was presented by the IS-95 filter subsystem and the IMT-2000 filter subsystem, respectively.

• Carbon letters
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• v.13 no.4
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• pp.226-229
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• 2012

Polyacetylene (PA) films with vertically aligned fibril morphology were synthesized in homeotropic nematic liquid crystal (N-LC) solvent by using a magnetic field of 5 Tesla as an external perturbation. Scanning electron microscope (SEM) photographs indicated that the lengths of fibrils from the substrate were $5-35{\mu}m$, depending on polymerization time. Carbonization was carried out using iodine-doped PA film and a morphology-retaining carbonization method. From the SEM results, we confirmed that the vertical morphology of the PA remains unchanged even after carbonization at $800^{\circ}C$. The weight loss of the films due to carbonization at $800^{\circ}C$ is about 20% of the weight of the film before iodine doping. It is expected that vertically aligned carbon might be a precursor for preparing vertical graphite materials, which materials could be useful for electrochemical energy storage and cell electrodes.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2001.11a
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• pp.77-81
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• 2001

This paper proposed a novel chip type ceramic dielectric antenna by using the advanced meander line technique that the radiational metals are formed on the face of ceramic dielectric(8 ${\times}$ 4 ${\times}$ 1.5 mm, alumina) and both facses of substrate(1.0 mm thickness, FR-4). The performance of the antenna model has a good agreements between measurements and computed results. Resultly, it has a 10 dB return-loss bandwidth(2.4～2.4835 GHz) and 1.7 dBi measured radiation gain for Bluetooth application. The proposed antenna model can overcome the problems of the radiation gain from the small antenna's size.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2003.11a
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• pp.322-325
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• 2003

A 7/21GHz frequency tripler, using a commercially available packaged pHEMT, was designed and fabricated on 15mil RO3003 substrate. Frequency conversion is realized using the third harmonic current of an class B amplifier with rejection feedback at fundamental with optimum load conductance at the third harmonic. The fabricated frequency tripler has achieved a conversion loss of 0.7dB for an input power of 0dBm at 21GHz. The experimental results show good agreement with the harmonic balance simulation.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2003.11a
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• pp.630-637
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• 2003

In this paper, a DBM(double balanced mixer) of 2 GHz is implemented on FR4(h=1.6mm, ${\epsilon}_r=4.6$) substrate. The structure of double balanced mixer requires, in general, two talons and a quad diode. For balun, a novel planar balun using microstrip to CPS(Coplanar Strip) is suggested and designed. The suggested balun shows the phase imbalance of $180^{\circ}{\pm}1.5^{\circ}$ and the amplitude imbalance of ${\pm}0.2 dB$ for 1.5 to 2.5 GHz. Using the balun, DBM is successfully implemented, and the measured conversion loss of up/down converter show about 6 dB over the bandwidth. The balun may be applicable for MMIC(Monolithic Microwave Integrated Circuit) DBM with the process supporting backside via though more study.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.153-156
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• 2004

The $Pb(Zr_{0.4}Ti_{0.6})O_3/Pb(Zr_{0.6}Ti_{0.4})O_3$ [PZT(4060)/(6040)] heterolayered thin films were deposited by RF sputtering method on the $Pt/TiO_2/SiO_2/Si$ substrate. The effects of the structural and dielectric properties of PZT heterolayered thin films were investigated. The MFM(Metal Ferroelectric Metal) type capacitors were made using the PZT(6040)/(4060) heterolayered thin films deposited with optimum deposition condition. An enhanced dielectric property was observed in the PZT(4060)/(6040) thin films. Investigating the dielectric constant and dielectric loss characteristics. the application for the next-generation dielectric thin films and memory devices were studied.

• Proceedings of the KIEE Conference
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• 1995.11a
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• pp.420-422
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• 1995

PVDF (polyvinylidene fluoride) has at least from known crystalline structure ( ; they are referred to as the $\alpha$, $\beta$, $\gamma$ and $\alpha_p$ phase or forms II, I, III and $IV_p$). In this study, the manufactured PVDF thin films through vapor deposition method had for II ( ; the substrate temperature at 30$^{\circ}C$). The dielectric behavior of poly(vinylidene fluoride) is affected by orientation and crystal modification. The very high value of the dielectric constant for high temperature conditioned film is believed to be due to the orientation effect. The loss peak caused by molecular motion of the molecules in crystalline regions.

• Proceedings of the KIEE Conference
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• 1997.11a
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• pp.609-611
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• 1997

Pt thin films flow sensors were fabricated by using aluminum oxide films as medium layer and their characteristics were investigated after annealing at $600^{\circ}C$ for 60min. Aluminum oxide improved adhesion of Pt thin films to $SiO_2$ layer without any chemical reactions to Pt thin films under high annealing temperatures. Output voltages increased as gas flow rate and gas conductivity increased because heat loss of heater, which was integrated with a sensing resistor in the flow sensor, increased. Output voltage of flow sensor fabricated on membrane structure was 101mV at $O_2$ flow rate of 2000sccm, heating power of 0.8W while flow sensor fabricated on Si substrate without membrane had output voltage of 78mV under the same conditions.

• Proceedings of the KIEE Conference
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• 2015.07a
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• pp.1140-1140
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• 2015

In this paper, the MIM thin films were deposited on Si substrate by sputtering method. And MIM thin films were annealed at $400{\sim}600^{\circ}C$ using RTA. The capacitance density of MIM thin films were increased with the increase of annealing temperature. The maximum capacitance density of $0.62{\mu}F/cm^2$ was obtained by annealing temperature at $600^{\circ}C$. The voltage dependence of dielectric loss showed about 0.03 in voltage ranges of -10~+10 V.