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The Fabrication of Flow Sensors Using Pt Micro Heater

  • 노상수 (동서대학교 전자기계공학부) ;
  • 정귀상 (동서대학교 전자기계공학부)
  • Noh, Sang-Soo (Division of Electronics and Mechanical Engineering, Dongseo university) ;
  • Chung, Gwiy-Sang (Division of Electronics and Mechanical Engineering, Dongseo university)
  • 발행 : 1997.11.29

초록

Pt thin films flow sensors were fabricated by using aluminum oxide films as medium layer and their characteristics were investigated after annealing at $600^{\circ}C$ for 60min. Aluminum oxide improved adhesion of Pt thin films to $SiO_2$ layer without any chemical reactions to Pt thin films under high annealing temperatures. Output voltages increased as gas flow rate and gas conductivity increased because heat loss of heater, which was integrated with a sensing resistor in the flow sensor, increased. Output voltage of flow sensor fabricated on membrane structure was 101mV at $O_2$ flow rate of 2000sccm, heating power of 0.8W while flow sensor fabricated on Si substrate without membrane had output voltage of 78mV under the same conditions.

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