C-V Characteristics of MIM Thin Film with Annealing Conditions

열처리조건에 따른 MIM 박막의 Capacitance-Voltage 특성

In this paper, the MIM thin films were deposited on Si substrate by sputtering method. And MIM thin films were annealed at $400{\sim}600^{\circ}C$ using RTA. The capacitance density of MIM thin films were increased with the increase of annealing temperature. The maximum capacitance density of $0.62{\mu}F/cm^2$ was obtained by annealing temperature at $600^{\circ}C$. The voltage dependence of dielectric loss showed about 0.03 in voltage ranges of -10~+10 V.