• Journal of Korea Society of Industrial Information Systems
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• v.20 no.1
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• pp.43-47
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• 2015

In this work, a broadband microstrip (MSL) - to - waveguide (WR12) transition has been presented for millimeter-wave module applications. For improvement of a bandwidth, the radial MSL electrical-probe is designed on the low-loss organic dielectric substrate. The designed and tested characteristics of the proposed transition are characterized in terms of an insertion and return loss. Considering the loss contribution of the cable adapter and waveguide transition for the measurement, the proposed transition loss can be analyzed as -1.88 and -2.01 dB per a transition at 70 and 80 GHz, respectively. The bandwidth of the proposed transition for reflection at -10 dB is 26 GHz at all test frequencies from 67 to 95 GHz. Compared to the state-of-the-art results, improvement of 8.3 % is achieved for the operation bandwidth.

• Applied Microscopy
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• v.45 no.4
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• pp.195-198
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• 2015

Gas-assisted etching (GAE) with focused ion beam (FIB) was applied to prepare plan-view specimens of Cu thin-layer on a silicon substrate for transmission electron microscopy (TEM). GAE using $XeF_2$ gas selectively etched the silicon substrate without volume loss of the Cu thin-layer. The plan-view specimen of the Cu thin film prepared by FIB milling with GAE was observed by scanning electron microscopy and $C_S$-corrected high-resolution TEM to estimate the size and microstructure of the TEM specimen. The GAE with FIB technique overcame various artifacts of conventional FIB milling technique such as bending, shrinking and non-uniform thickness of the TEM specimens. The Cu thin film was uniform in thickness and relatively larger in size despite of the thickness of <200 nm.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.12 no.6
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• pp.983-993
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• 2001

This paper proposed a novel chip type ceramic dielectric antenna by using the advanced meander line technique that the radiational metals are formed on the face of ceramic dielectric(8$\times$4$\times$1.5 mm, alumina) and both faces of substrate(1.0 mm thickness, FR-4). The performance of the antenna model has a good agreements between measurements and computed results. Resultly, it has a 10 dB return-loss bandwidth(2.4∼2.4835 GHz) and 1.7 dBi measured radiation gain for Bluetooth application. The proposed antenna model can overcome the limited radiation of the small-sized antenna.

• Transactions on Electrical and Electronic Materials
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• v.14 no.5
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• pp.225-230
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• 2013

This paper presents a novel shunt radio frequency microelectromechanical system switch on a quartz substrate with stiff ribs around the membrane. The buckling effects in the switch membrane and stiction problem are the primary concerns with RF MEMS switches. These effects can be reduced by the proposed design approach due to the stiffness of the ribs around the membrane. A lower mass of the beam and a reduction in the squeeze film damping is achieved due to the slots and holes in the membrane, which further aid in attaining high switching speeds. The proposed switch is optimized to operate in the k-band, which results in a high isolation of -40 dB and low insertion loss of -0.047 dB at 21 GHz, with a low actuation voltage of only 14.6 V needed for the operation the switch. The membrane does not bend with this membrane design approach. Finite element modeling is used to analyze the stress and pull-in voltage.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.470-473
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• 2001

In this study, 70/30 mol% P(VDF-TrFE) copolymer thin films were prepared by physical vapor deposition, and dielectric properties with frequency were investigated. From results of TA(Thermal Analysis), the Curie transition temperature and melting temperature were observed at 118.8$^{\circ}C$ and 146$^{\circ}C$, respectively. Therefore, while thin films were prepared, the substrate temperature was varied from 30$^{\circ}C$ to 90$^{\circ}C$. The dielectric constant decreased with increasing frequency. At measuring frequency of 1kHz, the relative dielectric constant increased from 3.643 to 23.998 with increasing substrate temperature from 30$^{\circ}C$ to 90$^{\circ}C$. As a result of dielectric loss factor, ${\alpha}$-relaxation and ${\beta}$-relaxation were observed near at 100Hz and 1MHz, respectively. And the magnitude of ${\alpha}$-relaxation decreased and that of ${\beta}$-relaxation increased with increasing substrate temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.219-222
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• 2003

In this paper, we designed a Ku-band BPF(Band Pass Filter) by microstrip line that most usually used a microwave device design and fabrication. Here a substrate of designed BPF were silicon substrate(${\varepsilon}_r=11.8$), and metal line was copper and silver/copper structure. And a configration of BPF was used hairpin pattern. A center frequency of designed BPF was 10GHz and their FBW(Fractional Band Width) was 20%(2GHz). It presented simulated results obtained for a 10GHz filter which yields an insertion loss of 0.1dB that ripple value related chebyshev reponse. Finallt we tried to make that a 30dB attenuation frequency was 20% of center frequency.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.829-833
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• 1996

Superconducting YBaCuO thin films were deposited on MgO (100) single crystal substrate by rf reactive sputtering method. Sputtering target was prepared by mixing the original powders of $Y_2O_3$, $BaCO_3$, and CuO at $830^{\circ}C$, and its composition was $YBa_2Cu_{3.3}O_x$ adding the excess CuO to compensate for the loss of Cu in the deposition process. The sputtering conditions for a high quality of YBCO thin film were: substrate temperature of 13$0^{\circ}C$; gas pressure of 10 mTorr; gas mixture ($O_2$: Ar =10: 90); distance of 2.5 inch; and rf power density of 4.87 W /$\textrm{cm}^2$. The deposition rate was 2.4~2.6 nm/min. From the RBS results, it was found that Cu and Ba contents in thin films decreased with the increase of substrate temperature. The increase of gas pressure resulted in significant deficiency of Ba elements.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.2
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• pp.173-181
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• 2011

In this paper, we propose a half mode substrate integrated waveguide(HMSIW) balanced bandpass filter to yield improved isolation between output ports. In order to achieve good isolation, resistive coupling slot is employed in HMSIW filter. The measurement results show that the insertion losses($S_{21}$, $S_{31}$) are $5.4{\pm}0.2$ dB and input return loss($S_{11}$) is more than 10 dB from 5.8 GHz to 6.4 GHz. Moreover isolation between output ports is larger than 18 dB and phase difference of output ports is $180{\pm}10^{\circ}$.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.7
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• pp.288-292
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• 2003

AlM thin film has been deposited on A1$_2$O$_3$ substrate by reactive radio frequency(RF) magnetron sputtering method under various operating conditions such as working pressure, fraction of nitrogen partial pressure, and substrate temperature. Scanning Electron Microscope(SEM), X-ray Diffraction(XRD), and Atomic Force Microscope(AFM) have been measured to find out structural properties and preferred orientation of AlN thin films. SAW velocity of IDTs/AlN/Si structure was about 5038［㎧］ at the center frequency of 251.9［MHz］ and insertion loss was measured to be relatively low value of 35.6［dB］. SAW velocity of IDTs/AlN/A1$_2$O$_3$ structure was improved to be about 5960［㎧］ at the center frequency of 296.7［MHz］.

• Tribology and Lubricants
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• v.37 no.2
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• pp.77-80
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• 2021

In this study, we investigated the effect of the spring constant on frictional behavior at a nanoscale through molecular dynamics simulation. A small cube-shaped tip was modeled and placed on a flat substrate. We did not apply the normal force to the tip but applied adhesive force between the tip and the substrate. The tip was horizontally pulled by a virtual spring to generate relative motion against the substrate. The controlled spring constant of the virtual spring ranged from 0.3 to 70 N/m to reveal its effect on frictional behavior. During the sliding simulation, we monitored the frictional force and the position of the tip. As the spring constant decreased from 70 to 0.3 N/m, the frictional force increased from 0.1 to 0.25 nN. A logarithmic relationship between the frictional force and spring constant was established. The stick-slip instability and potential energy slope increased with a decreasing spring constant. Based on the results, an increase in the spring constant reduces the probability of trapping in the local minima on the potential energy surface. Thus, the energy loss of escaping the potential well is minimized as the spring constant increases.