• Polymer(Korea)
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• v.36 no.4
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• pp.413-419
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• 2012

Multi-functional urethane acrylate monomers as the curing agent of poly(phenylene ether) (PPE) were synthesized and then the urethane bond formation was checked by FTIR spectrometry and NMR analysis. The synthesized monomers were mixed with PPE and fabricated to dielectric substrates. After forming PPE/monomer composite sheets by a film coater, several sheets were laminated to a test substrate in a vacuum laminator and then its properties depending on the type and the amount of monomers, such as dielectric constant, dielectric loss, and peel strength, were measured. Between the two different hydroxyl acrylates, when the monomer synthesized with 2-hydroxy-3-phenoxypropyl acrylate containing a phenyl group was used as a curing agent, a smaller dielectric loss was obtained and the dielectric constant and loss decreased with a decrease in the amount of the monomer. The peel strength values of the test substrates, however, did not show any specific difference between the cases of two synthesized monomers. As a result, it was obtained the polymer substrate for high frequency application having peel strength of about 10 N, low dielectric constant of 2.54, and low dielectric loss of 0.0027 at 1 GHz.

• Polymer(Korea)
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• v.33 no.1
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• pp.39-44
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• 2009

Polymer substrates were fabricated by using poly (phenylene ether) as a base resin, N,N'-m-phenylenedimaleimide (PDMI) as a crosslinking agent and decabromodiphenylethane as a flame retardant. The effects of crosslinking agent and flame retardant on physical properties such as dielectric property of the substrate were investigated. Thermal curing feature of PDMI with or without an initiator was analyzed by DSC, and then, PPE-PDMI test compositions were designed based on this result. Composite sheets were cast by film coater, laminated under vacuum and pressure, and then, the changes of dielectric constant, dielectric loss, peel strength, solder heat resistance and inflammability according to increasing amount of PDMI and flame retardant were evaluated, Dielectric constant and dielectric loss showed increasing trend with increasing amount of PDMI and flame retardant, but solder heat resistance and inflammability were improved. Peel strength was obtained higher than 1 kN/m when PDMI above 10 wt% was added, but slightly decreased as the amount of flame retardant increased. From the measured gel contents, the reaction mechanism of PPE-PDMI system was deduced to the formation of network structure by crosslinking PDMI with PPE rather than the formation of semi-IPN structure. In conclusion, the polymer composite substrate materials with dielectric constant of 2.52$\sim$2.65 and dielectric loss below 0.002 at 1 GHz were obtained and they will be proper for high frequency applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.566-569
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• 2002

The $(Sr_{0.9}Ca_{0.1})TiO_3$(SCT) thin films are deposited on Pt-coated electrode (Pt/TiN/$SiO_2$/Si) using RF sputtering method. The maximum dielectric constant of SCT thin film is obtained by annealing at $600[^{\circ}C]$. The temperature properties of the dielectric loss have a value within 0.02 in temperature ranges of $-80{\sim}+90[^{\circ}C]$. The capacitance characteristics had a stable value within ${\pm}4[%]$. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films is observed above 200[kHz].

• Journal of the Korean Vacuum Society
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• v.5 no.2
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• pp.169-174
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• 1996

The applications of the high density plasma sources to the etching in semiconductor fabrication process are actively studied because of the more strict requirement from the dry etching process due to shrinking down of the critical dimension. But in the oxide etching with the high density plasma sources, abundant fluorine atoms released from the flurocarbon feed gas make it difficult to get the highly selective $SiO_2/Si$ etching. In this study, to improve the $SiO_2/Si$ etch selectivity through the control of the radical loss channels, we propose the wall heating , one of methods of controlling loss mechanisms. With appearance mass spectroscopy(AMS) and actinometric optical emission spectroscopy(OES), the increase of both radicals impinging on the substrate and existing in bulk plasma, and the decrease of the fluorine atom with wall temperature are observed. As a result, a 40% improvement of the selectivity was achieved for the carbon rich feed gas.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.570-572
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• 2012

In this paper, a three-dimensional (3-D) low-loss and wide-band BPF based on low-temperature co-fired ceramic (LTCC) has been presented for mm-wave wireless communication applications. The proposed BPF is designed in a 6-layer LTCC substrate. The double patch resonators are fully integrated into the LTCC dielectrics and vertical via and planar CPW transitions are designed for interconnection between embedded resonators and in/output ports and MMICs, respectively. The designed BPF was fabricated in a 6-layer LTCC dielectric. The fabricated BPF shows a centre frequency (fc) of 53.23 GHz and a 3dB bandwidth of 14.01 % from 49.5 to 56.9 GHz (7.46 GHz). An insertion loss of -1.56 dB at fc and return losses below -10 dB are achieved. Its whole size is $4.7{\times}1.7{\times}0.684mm^3$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.350-353
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• 1999

This Paper Presents the optimized design of micro-heaters using 501(Si-on-insulator) substrate and oxide-filled trench structure In order to justify a lumped model approximation and thermal boundary assumptions, two-dimensional FDM(finite difference among which conduction is the dominant heat dissipation path. Compared with no-trenchs on the SOI structure, the micro-heaters with trench structures has properties of low heater loss and good thermal isolation. The simulation results show that the heater loss decreases as the number. width and distance of trenchs increases.

• Journal of IKEEE
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• v.23 no.2
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• pp.403-406
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• 2019

We propose a low-loss on-chip transformer using an auxiliary primary part (APP) for an output matching network for fully integrated CMOS power amplifiers. The APP is designed using a fifth metal layer while the primary and secondary parts are designed using a sixth metal layer with a width smaller than that of the primary and secondary parts of the transformer to minimize the substrate loss and the parasitic capacitance between the primary and secondary parts. By adapting the APP in the on-chip transformer, we obtain an improved maximum available gain value without the need for any additional chip area. The feasibility of the proposed APP structure is successfully verified.

• Korean Journal of Materials Research
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• v.23 no.7
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• pp.359-365
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• 2013

We investigated the nanostructural, chemical and optical properties of nc-Si:H films according to deposition conditions. Plasma enhanced chemical vapor deposition(PECVD) techniques were used to produce nc-Si:H thin films. The hydrogen dilution ratio in the precursors, [$SiH_4/H_2$], was fixed at 0.03; the substrate temperature was varied from room temperature to $600^{\circ}C$. By raising the substrates temperature up to $400^{\circ}C$, the nanocrystalite size was increased from ~2 to ~7 nm and the Si crystal volume fraction was varied from ~9 to ~45% to reach their maximum values. In high-resolution transmission electron microscopy(HRTEM) images, Si nanocrystallites were observed and the crystallite size appeared to correspond to the crystal size values obtained by X-ray diffraction(XRD) and Raman Spectroscopy. The intensity of high-resolution electron energy loss spectroscopy(EELS) peaks at ~99.9 eV(Si $L_{2,3}$ edge) was sensitively varied depending on the formation of Si nanocrystallites in the films. With increasing substrate temperatures, from room temperature to $600^{\circ}C$, the optical band gap of the nc-Si:H films was decreased from 2.4 to 1.9 eV, and the relative fraction of Si-H bonds in the films was increased from 19.9 to 32.9%. The variation in the nanostructural as well as chemical features of the films with substrate temperature appears to be well related to the results of the differential scanning calorimeter measurements, in which heat-absorption started at a substrate temperature of $180^{\circ}C$ and the maximum peak was observed at ${\sim}370^{\circ}C$.

• Journal of the Korean Society of Marine Environment & Safety
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• v.27 no.4
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• pp.521-528
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• 2021

In this study, to repair damaged economizer fin tubes on ships, sealing treatment was performed after applying arc thermal spray coating technology using Inconel 625. A solid particle erosion (SPE) experiment was conducted according to ASTM G76-05 to evaluate the durability of the substrate, thermal spray coating (TSC), and thermal spray coating+sealing treatment (TSC+Sealing) specimens. The surface damage shape was observed using a scanning electron microscope and 3D laser microscope, and the durability was evaluated through the weight loss and surface roughness analysis. Consequently, the durability of the substrate was superior to that of TSC and TSC+Sealing, which was believed to be owing to numerous pore defects in the TSC layer. In addition, the mechanism of solid particle erosion damage was accompanied by plastic deformation and fatigue, which were the characteristics of ductile materials in the case of the substrate, and the tendency of brittle fracture in the case of TSC and TSC+Sealing was confirmed.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.2 s.93
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• pp.204-210
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• 2005

In this paper, we are proposed the antennas for RFID tag operated at UHF band which are inserted ground plane easy to mount the RFTD chips at the antenna surfaces. In order to implemented antenna for RFID tag which the size is same as conventional name card, the structure of the antenna is meander type, matching method for improvement characteristics of the antenna use T matching method, ground plane is inserted at the antenna substrate fer mounting RFID chips. The substrate size of implementation is $100\times60\;mm^2$ and the FR4 substrate is used. Results of the experiment, the center frequency of the implemented antenna is 427 MHz, -10 dB return loss bandwidth is 8 MHz, maximum return loss is 21 dB, the radiation pattern is omnidirectional. From these results, we are conformed application for UHF RFID tag antenna.