• Journal of Mechanical Science and Technology
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• 제19권6호
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• pp.1378-1389
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• 2005

This work provides the fundamental knowledge of energy transport characteristics during very short-pulse laser heating of semiconductors from a microscopic viewpoint. Based on the self-consistent hydrodynamic equations, in-situ interactions between carriers, optical phonons, and acoustic phonons are simulated to figure out energy transport mechanism during ultrafast pulse laser heating of a silicon substrate through the detailed information on the time and spatial evolutions of each temperature for carriers, longitudinal optical (LO) phonons, acoustic phonons. It is found that nonequilibrium between LO phonons and acoustic phonons should be considered for ultrafast pulse laser heating problem, two-peak structures become apparently present for the subpicosecond pulses because of the Auger heating. A substantial increase in carrier temperature is observed for lasers with a few picosecond pulse duration, whereas the temperature rise of acoustic and phonon temperatures is relatively small with decreasing laser pulse widths. A slight lagging behavior is observed due to the differences in relaxation times and heat capacities between two different phonons. Moreover, the laser fluence has a significant effect on the decaying rate of the Auger recombination.

• 대한금속재료학회지
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• 제48권2호
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• pp.141-147
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• 2010

An Ni-Al intermetallic coating has been produced by induction heating on mild steel. The effect of the induction heating conditions on the microstructure of the coating has been investigated. The reaction synthesis of the intermetallic compounds was promoted while increasing the heating rate and the holding time at reaction temperature. Especially, an NiAl phase corresponding to the initial composition of mixed powder was predominantly formed. However, the synthesis at low reaction temperatures occurred by solid state diffusion during the holding time and an Fe-Al reaction layer was formed at the interface with the substrate, regardless of the heating rate. The combustion synthesis of the intermetallic compound occurred at a temperature higher than 1023 K and resulted in an almost single phase NiAl structure.

• Composites Research
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• 제30권3호
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• pp.181-187
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• 2017

나노 및 마이크로 크기의 철(Fe), 마그네타이트($Fe_3O_4$) 및 니켈(Ni) 입자가 분산된 열가소성 폴리우레탄(TPU) 접착필름에서 각 금속의 크기 및 형상 그리고 피착재의 종류에 따른 접착필름의 유도가열 거동을 연구하였다. 연구결과 동일한 첨가량 및 유사한 입자 크기에서 철과 니켈이 분산된 열가소성 TPU 접착필름에 비해 마그네타이트가 분산된 TPU 접착필름의 발열이 높게 나타났다. 철과 니켈의 입자 크기가 자기장의 표면 침투 깊이(Penetration skin depth) 보다 클 경우 와전류에 의한 발열로 인해 입자 크기가 커질수록 초기 승온속도와 최고 온도가 증가하는 것을 확인하였다. 서로 다른 형태를 갖는 니켈 입자를 사용한 유도가열 실험 결과 편상(flake)의 입자가 TPU 접착필름에 분산되었을 때 자기이력(Magnetic hysteresis)에 의한 열 발생으로 가장 높은 발열이 나타남을 알 수 있었다. 또한 금속 입자가 분산된 TPU 접착필름이 서로 다른 피착재에 적용되었을 때 발열현상이 상이하게 나타났으며 피착재의 열전도도에 따른 결과를 확인하였다.

• 한국표면공학회지
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• 제29권6호
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• pp.766-772
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• 1996

Undoped $SnO_x$ thin films were deposited on Si(100) substrate by using reactive ioassisted deposition technique (R-IAD). In order to investigate the effect of initial oxygen content and heat treatment on the oxidation state and crystalline structure of tin oxide films, $SnO_x$ thin films were post-annealed at 400~$600^{\circ}C$ for 1 hr. in a vacuum ~$5 \times 10^{-3}$ -3/ Torr or were directly deposited on the substrate of $400^{\circ}C$ and the relative arrival ration ($Gamma$) of oxygen ion to Sn metal varied from 0.025 to 0.1, i.e., average impinging energy ($E_a$) form 25 to 100 eV/atom. As $E_a$ increased, the composition ratio of $N_ON{sn}$ changed from 1.25 to 1.93 in post-annealing, treatment and 1.21 to 1.87 in in-situ substrate heating. In case of post-annealing, the oxidation from SnO to $SnO_2$ was closely related to initial oxygen contents and post-annealing temperature, and the perfect oxidation of $SnO_2$ in the film was obtained at higher than $E_a$=75 eV/atom and $600^{\circ}C$. The temperature for perfect oxidation of $SnO_2$ was reduced as low as $400^{\circ}C$ through in-situ substrate heating. The variation of the chemical state of $SnO_x$ thin films with changing $E_a$'s and heating method were also observed by Auger electron spectroscopy.

• 한국수소및신에너지학회논문집
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• 제22권2호
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• pp.206-212
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• 2011

The effect of process parameters on $H_2$ production from water vapor excited by HF ICP has been qualitatively examined for the first time. With the increase of ICP power, characteristics of $H_2$ production from $H_2O$ dissociation in plasma was divided into 3 regions according to both reaction mechanism and energy efficiency. At the edge of region (II) in the range of middle ICP power, energy effective hydrogen production from $H_2O$ plasma can be achieved. Furthermore, within the region (II) power condition, heating of substrate up to $500^{\circ}C$ shows additional increase of 70~80% in $H_2$ production compared to $H_2O$ plasma without substrate heating. This study have shown that combination of optimal plasma power (region II) and wall heating (around $500^{\circ}C$) is one of effective ways for $H_2$ production from $H_2O$.

• Journal of Information Display
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• 제10권3호
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• pp.117-120
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• 2009

A new crystallization method for amorphous silicon, called selective area heating (SAH), was proposed. The purpose of SAH is to improve the reliability of amorphous silicon films with extremely low thermal budgets to the glass substrate. The crystallization time shortened from that of the conventional solid-phase crystallization method. An isolated thin heater for SAH was fabricated on a quartz substrate with a Pt layer. To investigate the crystalline properties, Raman scattering spectra were used. The crystalline transverse optic phonon peak was at about 519 $cm^{-1}$, which shows that the films were crystallized. The effect of the crystallization time on the varying thickness of the $SiO_2$ films was investigated. The crystallization area in the 400nm-thick $SiO_2$ film was larger than those of the $SiO_2$ films with other thicknesses after SAH at 16 W for 2 min. The results show that a $SiO_2$ capping layer acts as storage layer for thermal energy. SAH is thus suggested as a new crystallization method for large-area electronic device applications.

• Transactions on Electrical and Electronic Materials
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• 제12권5호
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• pp.209-212
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• 2011

Hafnium nitride (HfN) thin films were deposited onto a silicon substrate by inductive coupled nitrogen plasma-assisted radio frequency magnetron sputtering. The films were prepared without intentional substrate heating and a substrate negative bias voltage ($-V_b$) was varied from -50 to -150 V to accelerate the effects of nitrogen ions ($N^+$) on the substrate. X-ray diffractometer patterns showed that the structure of the films was strongly affected by the negative substrate bias voltage, and thin film crystallization in the HfN (100) plane was observed under deposition conditions of -100 $V_b$ (bias voltage). Atomic force microscopy results showed that surface roughness also varied significantly with substrate bias voltage. Films deposited under conditions of -150 $V_b$ (bias voltage) exhibited higher hardness than other films.

• The Korean Journal of Ceramics
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• 제2권1호
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• pp.48-53
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• 1996

Ion beam assisted crystallization behavior of sol-gel derived $PbTiO_3$ thin films, deposited on bare silicon(100) substrates by spin-casting method, has been investigated. Ar ion bombardment was directly conducted on the spincoated film surface with or without heating the film from room temperature to $300^{\circ}C$. Ion dose was changed from $5{\times}10^{15}$ to $7.5{\times}10^{16}$ $Ar^-/cm^2$. Formation of (110) oriented perovskite phase was obseerved with ion dose above $5{\times}10^{16}\; Ar^+/cm^2$. Crystallization of $PbTiO_3$ thin film could be enhanced with increasing the Air ion dose, or heating the substrate during ion bombardment. Crystallization of the $PbTiO_3$ films by ion bombardment was related to the local heating effect during ion bombardment.

• 한국재료학회지
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• 제17권11호
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• pp.618-621
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• 2007

Chromium nitride (CrN) films were deposited on silicon substrate by RF magnetron sputtering assisted by inductive coupled nitrogen plasma without intentional substrate heating. Films were deposited with different levels of bombarding energy by nitrogen ions $(N^+)$ to investigate the influence of substrate bias voltage $(V_b)$ on the growth of CrN thin films. XRD spectra showed that the crystallographic structure of CrN films was strongly affected by substrate bias voltage. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) results showed that surface roughness and grain size of the CrN films varied significantly with bias voltage. For - 80 $V_b$ depositions, the CrN films showed bigger grain sizes than those of other bias voltage conditions. The lowest surface roughness of 0.15 nm was obtained from the CrN films deposited at .130 $V_b$.

• 한국표면공학회지
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• 제32권1호
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• pp.31-42
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• 1999

The effect was investigated that aluminium in the zinc bath has on the coating adhesion of Hot-rolled Galvanized Iron(HGI) manufactured without pickling process. It is thought that the coating adhesion of HGI manufactured without pickling process is good due to the fact that increasing aluminium content in the zinc bath makes zinc and aluminium diffuse to the cracks or pores in the scale formed through the reduction heat treatment, and Fe-Zn-Al compound with good ductility is formed in the scale layer and plays a role of anchor between zinc coating and substrate. It is possible that HGI with the good coating adhesion was produced without pickling treatment in the zinc bath with more that 3wt% of Al content even at the $550^{\circ}C$ of conventional reduction heating temperature. In creasing the temperature of heating section and aluminium content in the zinc bath prevents the Zn-Fe alloy. The corrosion resistance of HGI manufactured without pickling process is excellent because of the mixed reaction of zinc sacrifice and aluminium passivity film.