• 마이크로전자및패키징학회지
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• 제29권1호
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• pp.43-47
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• 2022

본 연구에서는 보일러 등에 적용을 하기 위하여 물속에 담군 채 가열할 수 있는 친환경 박막형 히터에 대한 결과를 보고한다. 장수명을 확보하기 위하여 소재 안정성이 높은 Mo 박막(40 nm)을 마그네트론 스퍼터법을 이용하여 Glass 기판상에 증착하였으며 후속 공정 진행 시 Mo 박막의 부식을 방지하기 위하여 상부에 ZnO 박막 (60 nm)을 형성하였다. 이후 투명 접착성을 가지는 PVB (Polyvinyl Butyral)를 이용하여 ZnO 박막 상부에 또 다른 Glass기판을 올려두고 열풍건조기 내에서 150℃의 온도에서 2시간동안 PVB를 경화시키며 접착시켜 Glass/Mo/ZnO/Glass 구조의 수중 히터를 완성하였다. 이렇게 제작한 발열체를 수중에 담근 후 발열 시 물의 온도가 2분 내 50℃까지 상승되는 것을 확인하였으며 미미한 수준의 저항증가가 발생하며 구조적 안정성 또한 확보되었다. 인가 전압의 세기에 따라 발열체의 온도가 제어되기 때문에 보일러에 적용할 때 사용자가 설정하는 온도를 용이하게 제어할 수 있을 것이라 기대된다. 마지막으로, 본 연구에서 제작한 박막형 히터는 반투명의 특성을 가져 심미성을 부여할 수 있어 제품의 부가가치를 더욱 높일 수 있을 것으로 기대된다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1514-1516
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• 1999

This paper covers our efforts to improve the low carrier mobility and light instability of hydrogenated amorphous silicon (a-Si:H) films with microcrystalline silicon $({\mu}c-Si)$ films. We successfully prepared ${\mu}c-Si$ films on $CaF_2$/glass substrate by decomposition of $SiH_4$ in RPCVD system. The $CaF_2$ films on glass served as a seed layer for ${\mu}c-Si$ film growth. The XRD analysis on $CaF_2$/glass illustrated a (111) preferred $CaF_2$ grains with the lattice mismatch less than 5 % of Si. We achieved ${\mu}c-Si$ films with a crystalline volume fraction of 61 %, (111) and (220) crystal orientations. grain size of $706\AA$, activation energy of 0.49 eV, and Photo/dark conductivity ratio of 124. By using a $CaF_2$/glass structure. we were able to achieve an improved ${\mu}c-Si$ films at a low substrate temperature of $300^{\circ}C$.

• 대한기계학회논문집A
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• 제32권9호
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• pp.720-727
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• 2008

Microfluidic single chip integrating thermopneumatic micropump and micro check valve are developed. The micropump and micorvalve are made of biocompatible materials, glass and PDMS, so as to be applicable to the biochip. By using the passive-type check valve, backward flow and fluid leakage are blocked and flow control is stable and precise. The chip is composed of three PDMS layers and a glass substrate. In the chip, flow channel and pump chamber were made on the PDMS layers by the replica molding technique and pump heater was made on the glass substrate by Cr/Au deposition. Diameter of the pump chamber is 7 mm and the width and depth of the channel are 200 and $180{\mu}m$, respectively. The PDMS layers chip and the heater deposited glass chip are combined by a jig and a clamp for pumping operation, and they are separable so that PDMS chip is used as a disposable but the heater chip is able to be used repeatedly. Pumping performance was simulated by CFD software and investigated experimentally. The performance was the best when the duty ratio of the applied voltage to the heater was 33%.

• 마이크로전자및패키징학회지
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• 제14권3호
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• pp.57-64
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• 2007

Si 칩에 박막히터를 형성하고 이에 전류를 인가하여 LCD (liquid crystal display) 패널의 유리기판은 가열하지 않으면서 Si 칩만을 선택적으로 가열함으로써 Si 칩을 LCD 패널의 유리기판에 실장 하는 새로운 COG 공정기술을 연구하였다. $5\;mm{\times}5\;mm$ 크기의 Si 칩에 마그네트론 스퍼터링법으로 폭 $150\;{\mu}m$,두께 $0.8\;{\mu}m$, 전체 길이 12.15 mm의 정방형 Cu 박막히터를 형성하였으며, 이에 0.9A의 전류를 60초 동안 인가하여 Si칩의 Sn-3.5Ag 솔더범프를 리플로우 시킴으로써 Si 칩을 유리기판에 COG 본딩하는 것이 가능하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 제40회 하계학술대회
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• pp.1279_1280
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• 2009

Vanadium dioxide(VO2) has been reported to be the most attractive material for thermochromic windows due to its semiconductor-metal phase transition at around $68^{\circ}C$. However, our previous experiment showed it is difficult to grow VO2 thin films directly on glass substrate, whereas thermochromic VO2 thin films were successfully grown on R-cut sapphire substrate. Properties of VO2 thin films on different orientations of sapphire substrates were already reported. Furthermore, VO2 thin films were successfully grown heteroepitaxially on (001) preferred oriented ZnO coated glass. We deposited VO2 thin films using V2O5 targets on substrates with various lattice parameters with same orientation(SrTiO3, MgO, and Sapphire substrate of (001) orientation) by pulsed laser deposition. In this work, we will discuss the effects of lattice misfit, substrate-induced stress and grain size on the properties of VO2 thin films deposited on various substrate materials.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.202-205
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• 2002

Polycrystalline silicon thin film transistors (poly-Si TFTs) are used in a wide variety of applications, and will figure prominently future high-resolution, high-performance flat panel display technology However, it was very difficult to fabricate high performance poly-Si TFTs at a temperature lower than 300$^{\circ}C$ for glass substrate. Conventional process on a glass substrate were limited temperature less than 600$^{\circ}C$ This paper proposes a high temperature process above 750$^{\circ}C$ using a flexible molybdenum substrate deposited hydrogenated amorphous silicon (a-Si:H) and than crystallized a rapid thermal processor (RTP) at the various temperatures from 750$^{\circ}C$ to 1050$^{\circ}C$. The high temperature annealed poly-Si film illustrated field effect mobility higher than 30 $\textrm{cm}^2$/Vs, achieved I$\sub$on//I$\sub$off/ current ratio of 10$^4$ and crystall volume fraction of 92%. In this paper, we introduce the new TFTs Process as flexible substrate very promising roll-to-roll process, and exhibit the properties of high temperature crystallized poly-Si Tn on molybdenum substrate.

• 한국광학회지
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• 제22권4호
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• pp.170-178
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• 2011

기층의 후면에서 반사한 빛이 미치는 영향을 고려하여 반투명한 기층 위에 박막이 있는 시료의 분광타원상수를 모델링 분석하였다. 후면반사가 타원상수에 미치는 영향을 기층의 복소굴절률과 두께를 사용하여 나타내었고 이를 모델링 분석에 적용하였다. 유리 기층 위에 ITO 박막이 있는 시료에 대해 후면반사를 고려한 표현들을 사용하여 박막의 두께와 복소굴절률 등을 구한 결과가 후면에서 반사된 빛을 제거하여 측정, 분석하는 통상적인 타원법에 의한 결과와 일치함을 보였다.

• 한국진공학회지
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• 제9권1호
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• pp.30-35
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• 2000

Indium-Tin Oxide (ITO) thin films were deposited on the commercial glass substrate by rf-magnetron sputtering. The ITO films with the thickness of 2,000~2,400 $\AA$ were prepared by changing the oxygen partial pressures of 2, 3, and 5%, as well as by changing the substrate temperature of $300^{\circ}C$ and $500^{\circ}C$. spectrophotometer, XRD, SEM, AFM, 4-point probe and Hall effect system were employed to characterize the ITO films. The optimum deposition conditions were the substrate temperature of $500^{\circ}C$ and oxygen partial pressure of 2-3%. At theses conditions, the ITO film showed the transmittance of 91%, the resistivity of $5.4\times10^{-3}\Omega$cm, the carrier concentration of $1.0\times10^{19}\textrm{cm}^{-3}$, and the carrier mobility of 150$\textrm{cm}^2$/Vsec. In XRD spectra, the (222) and (400) $In_2O_3$ planes were dominant under the optimum deposition conditions When the substrate was cleaned only by the method of ultrasonic cleaning without both pre-annealing and chemical treatment of the substrate, the ITO film exhibited the transmittance of 86%, the carrier concentration of $5.4\times10^{19}\textrm{cm}^{-3}$ and the mobility of 24$\textrm{cm}^2$/Vsec.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2010년도 춘계학술발표대회
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• pp.36.1-36.1
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• 2010

While the substrate-type solar cells with Cu(In,Ga)Se2 absorbers yield conversion efficiencies of up 20%[1], the highest published efficiency of Cu(In,Ga)Se2 superstrate solar cell is only 12.8% [2]. The commerciallized Cu(In,Ga)Se2 solar cells are made in the substrate configuration having the stacking sequence of substrate (soda lime glass)/back contact (molybdenum)/absorber layer (Cu(In,Ga)Se2)/buffer layer (cadmium sulfide)/window layer (transparent conductive oxide)/anti reflection layer (MgF2) /grid contact. Thus, it is not possible to illuminate the substrate-type cell through the glass substrate. Rather, it is necessary to illuminate from the opposite side which requires an elaborate transparent encapsulation. In contrast to that, the configuration of superstrate solar cell allows the illumination through the glass substrate. This saves the expensive transparent encapsulation. Usually, the high quality Cu(In,Ga)Se2 absorber requires a high deposition temperature over 550C. Therefore, the front contact should be thermally stable in the temperature range to realize a successful superstrate-type solar cell. In this study, it was tried to make a decent superstrate-type solar cell with the thermally stable ZnO:Al layer obtained by adjusting its deposition parameters in magnetron sputtering process. The effect of deposition condition of the layer on the cell performance will be discussed together with hall measurement results and current-voltage characteristics of the cells.

• Transactions on Electrical and Electronic Materials
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• 제11권2호
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• pp.73-76
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• 2010

The copper indium disulfide ($CuInS_2$) thin film was manufactured using sputtering and thermal evaporation methods, and the annealing with sulfurization process was used in the vacuum chamber to the substrate temperature on the glass substrate, the annealing temperature and the composition ratio, and the characteristics thereof were investigated. The $CuInS_2$ thin film was manufactured by the sulfurization of a soda lime glass (SLG) Cu/In/S stacked [1] elemental layer deposited on a glass substrate by vacuum chamber annealing [2] with sulfurization for various times at a temperature of substrate temperature of $200^{\circ}C$. The structure and electrical properties of the film was measured in order to determine the optimum conditions for the growth of $CuInS_2$ ternary compound semiconductor $CuInS_2$ thin films with a non-stoichiometric composition. The physical properties of the thin film were investigated under various fabrication conditions [3,4], including the substrate temperature, annealing temperature and annealing time by X-ray diffraction (XRD), field Emission scanning electron microscope (FE-SEM), and Hall measurement systems. [5] The sputtering rate depending upon the DC/RF power was controlled so that the composition ratio of Cu versus In might be around 1:1, and the substrate temperature affecting the quality of the film was varied in the range of room temperature (RT) to $300^{\circ}C$ at intervals of $100^{\circ}C$, and the annealing temperature of the thin film was varied RT to $550^{\circ}C$ in intervals of $100^{\circ}C$.