• 한국결정성장학회지
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• 제30권3호
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• pp.83-90
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• 2020

열전도성이 우수한 AlN 기판에 형성되는 Ag계 후막도체의 접착강도에 미치는 기판 표면조도 및 소결 온도의 영향을 연구하였다. 표면조도(R_a)가 0.5인 AlN 기판을 사용하여 제조한 후막도체의 접착강도가 이보다 표면조도가 크거나 또는 작은 기판을 사용하여 제조한 후막도체의 경우보다 높게 나타났다. 표면조도가 0.5보다 작은 기판의 경우 Ag 후막도체와 기판 사이의 접촉면적이 표면조도가 0.5인 기판보다 상대적으로 작아 접착강도가 작게 나타났다. 한편, 표면조도가 0.5보다 큰 기판을 사용한 경우에는 도체막이 기판에 완전히 접착되지 못하는 현상이 나타났고, 이로 인해서 접착강도가 적게 나타남을 알 수 있었다. 또한, 850℃에서 소결하여 얻어진 Ag계 후막도체 막의 표면 평활도가 다른 소결 온도에서 소결하여 얻어진 도체막의 평활도에 비해 가장 우수하였고, 이로 인해 도체막의 접착강도가 가장 높게 나타남을 알 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.36-39
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• 2002

Polycrystalline silicon (poly-Si) thin film transistor (TFT) technology is emerging as a key technology for active matrix liquid crystal displays (AMLCD), allowing the integration of both active matrix and driving circuit on the same substrate (normally glass). As high temperature process is not used for glass substrate because of the low softening points below 450$^{\circ}C$. However, high temperature process is required for getting high crystallization volume fraction (i.e. crystallinity). A poly-Si thin film transistor has been fabricated to investigate the effect of high temperature process on the molybdenum (Mo) substrate. Improve of the crystallinity over 75% has been noticed. The properties of structural and electrical at high temperature poly-Si thin film transistor on Mo substrate have been also analyzed using a sputtering method

• International Journal of Ocean System Engineering
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• 제2권2호
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• pp.106-115
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• 2012

In the present study, TiN and CrN films were coated by arc ion plating equipment onto aluminum alloy substrate, A2024. The film thickness was about 4.65 ${\mu}m$. TiN and CrN films were analyzed by X-ray diffraction and energy dispersive X-ray equipments. The Young's modulus and the micro-Vickers hardness of aluminum substrate were modified by the ceramic film coatings. The difference in Young's modulus between substrate and coating film would affect on the wear resistance. The critical load, Lc, was 75.8 N for TiN and 85.5 N for CrN. It indicated from the observation of optical micrographs for TiN and CrN films that lots of cracks widely propagated toward the both sides of scratch track in the early stage of MODE I. TiN film began to delaminate completely at MODE II stage. The substrate was finally glittered at MODE III stage. For CrN film, a few crack can be observed at MODE I stage. The delamination of film was not still occurred at MODE II and then was happened at MODE III. This agrees with critical load measurement which the adhesive strength was greater for CrN film than for TiN film. Consequently, it was difficult for CrN to delaminate because the adhesive strength was excellent against Al substrate. The wear process, which the film adheres and the ball transfers, could be enhanced because of the increase in loading. The wear weight of ball was less for CrN than for TiN. This means that the wear damage of ball was greater for TiN than for CrN film. It is also obvious that it was difficult to delaminate because the CrN coating film has high toughness. The coefficient of friction was less for CrN coating film than for TiN film.

• The Korean Journal of Ceramics
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• 제3권2호
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• pp.105-109
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• 1997

The effects of surface conditions of the C-2 cemented carbide substrate on the adhesion of diamond film were investigated. The substrates were pretreated for different times with Murakami's reagent and then the acid solution of an H2SO4-H2O2. The adhesion strength was estimated by a peeling area around the Rockwell-A indentation. The cutting performance of the diamond-coated tools was evaluated by measuring flank wears in dry turning of Al-17% Si alloy. The morphology of deposited diamond crystallites was dominated by (111) and (220) surfaces with a cubooctahedral shape. The diamond film quality was hardly affected by the surface conditions of the substrate. The variation of tool life with longer substrate etching times resulted from a compromies between the increase of film adhesion at the interface and the decrease of toughness at the substrate surface. The coated tools were mainly deteriorated by chipping and flaking of the diamond film form a lock of adhesion strength, differently from the wear phenomena of PCD tools.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.177-179
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• 2011

The purpose of this study is to enhance an adhesion between substrate and Diamond-like Carbon (DLC) film. DLC has many outstanding properties such as low friction, high wear resistance and corrosion resistance. However, it is difficult to achieve enough adhesion because of weak bonding between DLC film and the substrate. For improvement adhesion, a layer between DLC film and the substrate was prepared by dual post plasma. DLC film was deposited on nitrided layer by linear ion source. The composed compound layer between substrate and DLC film was investigated by Glow Discharge Spectrometer (GDS) and Scanning Electron Microscope (SEM). The synthesized bonding structure of DLC film was analyzed using a micro raman spectrometer. Mechanical properties were measured by nano-indentation. In order to clarify the mechanism for improvement in adhesive strength, it was observed by scratch test.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 춘계학술발표대회
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• pp.52.1-52.1
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• 2009

Cupric oxide (CuO) is a p-type semiconductor with band gap of ~1.7 eV and reported to be suitable for catalysis, lithium-copper oxide electrochemical cells, and gas sensors applications. The nanoparticles, plates and nanowires of CuO were found sensing to NO2, H2S and CO. In this work, we report about the comparison about hydrogen sensing of nano thin film and nanowires structured CuO deposited on single-walled carbon nanotubes (SWNTs). The thin film and nanowires are synthesized by deposition of Cu on different substrate followed by oxidation process. Nano thin films of CuO are deposited on thermally oxidized silicon substrate, whereas nanowires are synthesized by using a porous thin film of SWNTs as substrate. The hydrogen sensing properties of synthesized materials are investigated. The results showed that nanowires cupric oxide deposited on SWNTs showed higher sensitivity to hydrogen than those of nano thin film CuO did.

• Journal of Magnetics
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• 제18권1호
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• pp.39-42
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• 2013

We studied the structural and electrical properties of $SrRuO_3$ thin films grown on $SrTiO_3$ (110) substrate. High resolution X-ray diffraction measurement of the grown film showed 1) very sharp peaks for $SrRuO_3$ film with a very narrow rocking curve with FWHM = $0.045^{\circ}$ and 2) coherent growth behavior having the same in-plane lattice constants of the film as those of the substrate. The resisitivity data showed good metallic behavior; ${\rho}$ = 63(205) ${\mu}{\Omega}{\cdot}cm$ at 5 (300) K with a residual resistivity ratio of ~3. The observed kink at ${\rho}(T)$ showed that the ferromagnetic transition temperature was ~10 K higher than that of $SrRuO_3$ thin film grown on $SrTiO_3$ (001) substrate. The observed rather lower RRR value could be partially due to a very small amount of Ru vacancy generally observed in $SrRuO_3$ thin films grown by PLD method and is evident in the larger unit-cell volume compared to that of stoichiometric thin film.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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• pp.727-730
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• 2003

Thin tin oxide film with nano-size particle was prepared on silicon substrate by hydrothermal synthetic method and successive sol-gel spin coating method. The fabrication method of tin oxide film with ultrafine nano-size crystalline structure was tried to be applied to fabrication of micro gas sensor array on silicon substrate. The tin oxide film on silicon substrate was well patterned by chemical etching upto 5${\mu}{\textrm}{m}$width and showed very uniform flatness. The tin oxide film preparation method and patterning method were successfully applied to newly proposed 2-dimensional micro sensor fabrication.

• 한국광학회지
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• 제31권6호
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• pp.321-327
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• 2020

기판 위에 코팅된 박막의 빛 반사 특성에 대해 연구하였다. 입사 매질로 굴절률이 큰 프리즘을 사용하여 박막/기판 계의 내부 전반사 현상과 공기/박막/기판 계가 이루는 도파로로 빛이 결합되어 들어가는 현상을 종합적으로 비교, 연구하였다. 박막의 굴절률이 기판의 굴절률보다 큰 경우에는 빛의 입사각을 증가시켜 나가면 먼저 기판에 의한 전반사가 일어나고, 그 이후 도파로 모드를 맞추는 좁은 각 영역에서 반사율이 떨어지는 현상을 볼 수 있으며, 이것을 이용하여 박막의 굴절률과 두께를 정확히 측정할 수 있다. 반면에 박막의 굴절률이 기판의 굴절률보다 작은 경우에는 도파로 모드가 존재하지 않는다. 이 경우 덩어리 매질에서처럼 뚜렷하지는 않지만 박막에 의한 전반사가 간섭무늬를 동반하여 나타난다. 본 연구에서는 프리즘/박막/기판 구조에서 일어나는 반사 현상을 전반적으로 관측하고 분석하여, 두 경우 모두 박막의 굴절률을 측정할 수 있는 가능성을 조사하였다.

• 한국전기전자재료학회논문지
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• 제20권11호
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• pp.965-968
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• 2007

In this study we investigated the variation of the substrate temperatures using RF sputtering to identify the effect on the structure and electrical properties by c-axis orientation of ZnO thin film. ZnO thin films were prepared on Al/Si substrate. In our experimental results, ZnO thin film at $300^{\circ}C$ was well grown with (002) peak of ZnO thin film, the thin film showed the high resistivity with the value of $5.9{\times}10^7\;{\Omega}cm$ and the roughness with 27.06 nm. As increased the substrate temperatures, the grain size of ZnO thin films was increased. From these results, we could confirm the suitable substrate temperature of ZnO thin films for FBAR(film bulk acoustic resonator).