• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2000년도 제1회 학술대회 논문집
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• pp.39-40
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• 2000

STN LCDs on Plastic Film substrates for mobile communication devices have been researched and developed at KETI in KOREA. The Plastic Film substrate is so weak to heat and pressure that its fabrication process is limited to $110^{\circ}C(Tg)$. In order to maintain uniform pressure on Plastic Film substrate we used newly designed jig and fabrication process. Electro-optical characteristics are better than or equivalent to those of typical glass LCD though it is thinner, lighter-weight, and more robust than glass LCD.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2006년도 춘계학술대회
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• pp.164-167
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• 2006

In this paper, we prepared Al doped ZnO thin films by using facing targets sputtering method. Al doped ZnO thin film was deposited with different working pressure on flexible substrate. We prepared Al doped ZnO thin film at room temperature, because the flexible substrate has weak thermal resistance. From the results, we could obtain thin film with a resistivity of $8.4{\times}10^{-4}{\Omega}cm$, an average transmittance of over 80% and a film thickness of 200nm.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 Techno-Fair 및 추계학술대회 논문집 전기물성,응용부문
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• pp.126-127
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• 2007

In this study, the fabrication technique of a plannar field emission structure with DLC were studied Electric properties of carbon film on silicon substrate in methanol solution was carried out with various current density, solution temperature and electrode spacing between anode and cathode. The DLC film deposited on the Si substrate, plannar $SiO_2$ was obtained due to the shape of bottom electrode.

• 한국정보통신학회논문지
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• 제16권10호
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• pp.2247-2252
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• 2012

본 논문은 동시진공증발법(co-evaporation method)으로 CIGS 박막(thin film)을 제작을 하였다. 제작과정 중 기판온도(substrate temperature)변화와 Ga/(In+Ga) 조성비(composition ratio) 변화에 따른 저항율(resistivity) 및 흡수스펙트럼(absorbance spectra)을 측정하였다. 기판온도가 상승하면 저항율이 감소하였으며, Ga/(In+Ga) 조성비가 0.30에서 0.72까지 증가됨에 따라 밴드갭(band gap)이 1.26eV, 1.30eV, 1.43eV,1.47eV로 증가됨을 알 수 가 있었다. 동일한 조건에서 조성비를 증가하므로써 두께가 증가되었으며 저항율은 감소하였다. 본 실험을 통하여 CIGS 박막을 제작하면 광흡수률(optical absorbance ratio) 및 광전류(optical current)가 증가 될 것으로 예측할 수가 있다.

• 한국전기전자재료학회논문지
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• 제13권8호
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• pp.658-666
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• 2000

Sb and Sb-Fe doped SnO$_2$film resistors were prepared by spray pyrolysis technique. The effects of Sb and Sb-Fe addition on TCR and electrical properties of SnO$_2$film resistors were studied. Also the dependence of electrical properties on the substrate temperature and substrate-nozzle distance was investigated. The Sn-Sb system with 7.9 mol% SbCl$_3$(STO-406) and Sn-Sb-Fe systems with 7.3 mol% SbCl$_3$+7.3 mol% FeCl$_3$(STO-407) and with 3.4 mol% SbCl$_3$+7.7mol% FeCl$_3$(STO-408) were prepared. Both of the systems Sn-Sb and Sn-Sb-Fe represented nonlinearity of TCR with temperature. As the amount of Fe increased TCR was shifted to positive direction. Decreasing Sb or increasing Fe caused resistivity to increase. Also increasing Fe caused the crystallization degree of rutile structure in SnO$_2$film to decrease. The electrical resistivity decreased with increasing substrate temperature The resistivity decreased with increasing substrate-nozzle distance in the ranges from 15 to 25 cm and increased rapidly at the distance over 25cm.

• Journal of Magnetics
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• 제12권1호
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• pp.21-26
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• 2007

Si-based electromagnetic noise suppressors on coplanar waveguide transmission lines incorporated with a $SiO_2$ dielectric layer and a nanogranular Co-Fe-Al-O magnetic thin film are reported. Unlike glass-based devices, large signal attenuation is observed even in the bare structure without coating the magnetic thin film. Much larger signal attenuation is achieved in fully integrated devices. The transmission scattering parameter ($S_{21}$) is as small as -90 dB at 20 GHz at the following device dimensions; the thicknesses of the $SiO_2$ and Co-Fe-Al-O thin films are 0.1 $\mu$m and 1 $\mu$m, respectively, the length of the transmission line is 15 mm, and the width of the magnetic thin film is 2000 $\mu$m. In all cases, the reflection scattering parameter ($S_{11}$) is below -10 dB over the whole frequency band. Additional distributed capacitance formed by the Cu transmission line/$SiO_2$/Si substrate is responsible for these characteristics. It is considered that the present noise suppressors based on the Si substrate are a first important step to the realization of MMIC noise suppressors.

• Journal of information and communication convergence engineering
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• 제1권1호
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• pp.23-26
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• 2003

A photodiode capable of obtaining a sufficient photo/dark current ratio at both a forward bias state and a reverse bias state is proposed. The photodiode includes a glass substrate, an aluminum film formed as a lower electrode over the glass substrate, an alumina film formed as a schottky barrier over the aluminum film, a hydrogenated amorphous silicon film formed as a photo conduction layer over a portion of the alumina film, and a transparent conduction film formed as an upper electrode over the hydro-generated amorphous silicon film. Growth of high quality alumina($Al_{2}O_{3}$) film using anodizing technology is proposed and analyzed by experiment. We have obtained the film with a superior characteristics

• 마이크로전자및패키징학회지
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• 제25권2호
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• pp.49-53
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• 2018

최근 유연 소자, 투명 소자, MEMS 소자와 같은 다양한 소자를 결합하는 시스템 집적화 기술이 많이 개발되고 있다. 이러한 다종 소자 시스템 제조 기술의 핵심 공정은 칩 또는 웨이퍼 레벨의 접합 공정, 기판 연삭 공정, 그리고 박막 기판 핸들링 기술이라 하겠다. 본 연구에서는 Si 기판 연삭 공정이 투명 박막 트랜지스터나 유연 전극 소재로 적용되는 산화주석 박막의 전기적 성질에 미치는 영향을 분석하였다. Si 기판의 두께가 얇아질수록 Si d-spacing은 감소하였고, Si 격자 내에 strain이 발생하였다. 또한, Si 기판의 두께가 얇아질수록 산화주석 박막 내 캐리어 농도가 감소하여 전기전도도가 감소하였다. 얇은 산화 주석 박막의 경우 전기전도도는 두꺼운 산화 주석 박막보다 낮았으며 Si 기판의 두께에 의해 크게 변하지 않았다.

• E2M - 전기 전자와 첨단 소재
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• 제9권2호
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• pp.196-203
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• 1996

The highly c-axis oriented zinc oxide thin films were deposited on Sapphire(0001) substrates by reactive RF magnetron sputtering. The characteristics of zinc oxide thin films on RF power, substrate-target distance, and substrate temperature were investigated by XRD, SEM and EDX analyses. The physical characteristics of zinc oxide thin films changed with various deposition conditions. The higher substrate temperatures were, The better crystallinity of zinc oxide thin films. The highly c-axis oriented zinc oxide thin films were obtained at sputter pressure 5mTorr, rf power 200W, substrate temperature 350.deg. C, substrate-target distance 5.5cm. In these conditions, the resistivity of zinc oxide thin films deposited on pt/sapphire was 12.196*10$^{9}$ [.ohm.cm].

• 한국재료학회지
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• 제12권4호
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• pp.304-307
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• 2002

A zinc oxide (ZnO) single crystal was used as a substrate in the hydride vapor-phase epitaxy (HVPE) growth of GaN and the structural and optical properties of GaN layer were characterized by x- ray diffraction, transmission electron microscopy, secondary ion mass spectrometry, and photoluminescence (PL) analysis. Despite a good lattice match and an identical structure, ZnO is not an appropriate substrate for application of HVPE growth of GaN. Thick film could not be grown. The substrate reacted with process gases and Ga, being unstable at high temperatures. The crystallinity of ZnO substrate deteriorated seriously with growth time, and a thin alloy layer formed at the growth interface due to the reaction between ZnO and GaN. The PL from a GaN layer demonstrated the impurity contamination during growth possibly due to the out-diffusion from the substrate.