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Fabrication of a Hydrogenated a-Si Photodiode  

Hur, Chang-Wu (Department of Information Technology Engineering, Mokwon University)
Abstract
A photodiode capable of obtaining a sufficient photo/dark current ratio at both a forward bias state and a reverse bias state is proposed. The photodiode includes a glass substrate, an aluminum film formed as a lower electrode over the glass substrate, an alumina film formed as a schottky barrier over the aluminum film, a hydrogenated amorphous silicon film formed as a photo conduction layer over a portion of the alumina film, and a transparent conduction film formed as an upper electrode over the hydro-generated amorphous silicon film. Growth of high quality alumina($Al_{2}O_{3}$) film using anodizing technology is proposed and analyzed by experiment. We have obtained the film with a superior characteristics
Keywords
hydrogenated Amorphous Silicon Film; Photodiode;
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1 S.Ri, H.Fujioka, K.Fujino, 'a-Si:H image sensor : Characteristics of an ITO/a-Si:H junction,' MRS, Vol.118, 1998, pp.451-455
2 J.McGill, O.Prache, 'a-Si:H alloy contact image sensor,' SID Digest, 1989, pp.252-255
3 Q. Ma, 'ITO/a-Si:H Schottky photodiode with low leakage current and high stability, 'Mat.Res.Soc. Symposium B, Sanfrancisco, April, 1999, pp.5-9
4 A. Nathan, 'High performance Schottky photodiode based on polycrystalline ITO deposited at room temperature,' IEEE Workshop on Charge-Coupled Devices and Advanced Omage Sensor, Karuizawa, Japan, June, 1999,pp. 10-12
5 B.W.Park, J.L.Choi, and C.W.Hur, 'Micro-crystal silicon in image sensor,' MIRS, vol.283, 1992, pp.609-612
6 M.Hoheisel, N.Brutscher, 'The interface a-Si:H/ITO structure and properties,' J. Non-crys, Sil, vol.7, 1987, pp.959-964
7 K. Aflatooni, R. Homsey, A. Nathan, 'Reverse current instabilities in amorphous silicon Schottky diodes: modeling and experiments,' IEEE Trans. Electron Devices, vol.46, 1999, pp.1417-1422   DOI   ScienceOn