1 |
S.Ri, H.Fujioka, K.Fujino, 'a-Si:H image sensor : Characteristics of an ITO/a-Si:H junction,' MRS, Vol.118, 1998, pp.451-455
|
2 |
J.McGill, O.Prache, 'a-Si:H alloy contact image sensor,' SID Digest, 1989, pp.252-255
|
3 |
Q. Ma, 'ITO/a-Si:H Schottky photodiode with low leakage current and high stability, 'Mat.Res.Soc. Symposium B, Sanfrancisco, April, 1999, pp.5-9
|
4 |
A. Nathan, 'High performance Schottky photodiode based on polycrystalline ITO deposited at room temperature,' IEEE Workshop on Charge-Coupled Devices and Advanced Omage Sensor, Karuizawa, Japan, June, 1999,pp. 10-12
|
5 |
B.W.Park, J.L.Choi, and C.W.Hur, 'Micro-crystal silicon in image sensor,' MIRS, vol.283, 1992, pp.609-612
|
6 |
M.Hoheisel, N.Brutscher, 'The interface a-Si:H/ITO structure and properties,' J. Non-crys, Sil, vol.7, 1987, pp.959-964
|
7 |
K. Aflatooni, R. Homsey, A. Nathan, 'Reverse current instabilities in amorphous silicon Schottky diodes: modeling and experiments,' IEEE Trans. Electron Devices, vol.46, 1999, pp.1417-1422
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