• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.330-333
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• 2002

The substrate temperature is an important parameter in thin film deposition process. In this paper the effects of the substrate temperature on the properties of CuIn0.75Ga0.25Se2(CIGS) thin films are reported. Structure, surface morphology and optical properties of CIGS thin films deposited at various substrate temperatures have been investigated using a number of analysis techniques. X-ray diffraction (XRD) analysis shows that CIGS films exhibit a strong <112> preferred orientation. As expected, at higher substrate temperatures the films displayed a higher degree of crystallinity. The <112> peak was also enhanced and other CIGS peaks appeared simultaneously These results were supported by experimental work using Raman spectroscopy. The Raman spectra of the as-grown CIGS thin films show only the Al mode peak. The intensity of this peak was enhanced at higher deposition temperatures. Scanning electron microscopy (SEM) results revealed very small grains in films fabricated at 48$0^{\circ}C$ substrate temperature. When the substrate temperature was increased the average grain size also increased together with a reduction in the number and size of the voids. The deposition temperature also had a significant influence on the transmission spectra.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.1
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• pp.39-43
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• 2021

In the case of ZnO:Al thin films, it is the best material that can replace ITO that is mainly used as a transparent electrode in electronic devices such as solar cells and flat-panel displays. In this study, ZnO:Al films were fabricated by using the RF dual magnetron sputtering method at various substrate temperatures. As the substrate temperature increased, the crystallinity of the ZnO:Al thin films was improved, and the electrical conductivity and electrical properties of the thin film improved owing to the increase in grain size. In addition, the surface roughness of the ZnO:Al thin films increased due to changes in the surface and density of the thin films. Moreover, the substrate temperature increased the density of thin films and improved their transmittance. To be applied to solar cells and other several electronic devices in the future, the hardness and adhesion properties of the thin film improve as the substrate temperature increases.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.469.2-469.2
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• 2014

All-solid-state solar cell based on Chloride doped organometallic halide perovskite, (CH3NH3)PbIxCl3-x, has achieved a highly power conversion efficiency (PCE) to over 15% [1] and further improvements are expected up to 20% [2]. In this way, solar cells using novel light absorbing perovskite material are actively being studied as a next generation solar cells. However, making solution-process require high temperature up to $500^{\circ}C$ to form compact hole blocking layer and sinter the mesoporous oxide scaffold layer. Because of this high temperature process, fabrication of flexible solar cells on plastic substrate is still troubleshooting. In this study, we fabricated highly efficient flexible perovskite solar cells with PCE in excess of 11%. Atomic layer deposition (ALD) is used to deposit dense $TiO_2$ as hole blocking layer on ITO/PEN substrate. The all fabrication process is done at low temperature below $150^{\circ}C$. This work shows that one of the important blueprint for commercial use of perovskite solar cells.

• Proceedings of the KIEE Conference
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• 1987.07a
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• pp.509-512
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• 1987

We report that the optimum substrate temperature to fabricate a-Si:H $n^+-p-p^+$ cell decreases with increasing the boron concentration in the Player. The results can be explained as the dependence of substrate temperature for the relaxation of silicon atoms and the bonded hydrogen concentration in the player.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.525-528
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• 2001

ZnO:Al thin film can be used as a transparent conducting oxide(TCO) which has low electric resistivity and high optical transmittance for the front electrode of amorphous silicon solar cells and display devices. This study of electrical, crystallographic and optical properties of Al doped ZnO thin films prepared by Facing Targets Sputtering (FTS), where strong internal magnets were contained in target holders to confine the plasma between the targets, is described. Optimal transmittance and resistivity was obtained by controlling flow rate of O$_2$ gas and substrate temperature. When the of gas rate of 0.3 and substrate temperature 200$^{\circ}C$ , ZnO:Al thin film had strongly oriented c-axis and lower resistivity(<10$\^$-4/Ω-cm).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.10
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• pp.648-651
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• 2015

The characterizations of zinc oxide (ZnO) buffer layers grown by unbalanced magnetron (UBM) sputtering under various substrate temperatures for inverted organic solar cells (IOSCs) were investigated. UBM sputter grown ZnO films exhibited higher crystallinity with increasing the substrate temperature, resulting in uniform and large grain size. Also, the electrical properties of ZnO films are improved with increasing substrate temperature. In the results, the performance of IOSCs critically depended on the substrate temperature during the film growth because the crystalllinity of the ZnO film affect the carrier mobility of the ZnO film.

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.85-87
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• 2009

Despite the success of $Cu(In,Ga)Se_2$ (CIGS) based PV technology now emerging in several industrial initiatives, concerns about the cost of In and Ga are often expressed. It is believed that the cost of those elements will eventually limit the cost reduction of this technology. one candidate to replace CIGS is $Cu_2ZnSnSe_4$ (CZTSe), fabricated by co-evaporation technique. Effects of substrate temperature of $Cu_2ZnSnSe_4$ absorber layer on the performance of thin films solar cells were investigated. As substrate temperature increased, the grain size of $Cu_2ZnSnSe_4$ films increased presumably. At a optimal condition of substrate temperature is $320^{\circ}C$, the solar cell shows a conversion efficiency of 1.79% with $V_{OC}$ of 0.213V, JSC of $16.91mA/cm^2$ and FF of 49.7%.

• Journal of the Korean Ceramic Society
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• v.55 no.1
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• pp.50-54
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• 2018

This study investigated the long-term durability of catalyst(Pd or Fe)-infiltrated solid oxide cells for $CO_2$/steam co-electrolysis. Fuel-electrode supported solid oxide cells with dimensions of $5{\times}5cm^2$ were fabricated, and palladium or iron was subsequently introduced via wet infiltration (as a form of PdO or FeO solution). The metallic catalysts were employed in the fuel-electrode to promote $CO_2$ reduction via reverse water gas shift reactions. The metal-precursor particles were well-dispersed on the fuel-electrode substrate, which formed a bimetallic alloy with Ni embedded on the substrate during high-temperature reduction processes. These planar cells were tested using a mixture of $H_2O$ and $CO_2$ to measure the electrochemical and gas-production stabilities during 350 h of co-electrolysis operations. The results confirmed that compared to the Fe-infiltrated cell, the Pd-infiltrated cell had higher stabilities for both electrochemical reactions and gas-production given its resistance to carbon deposition.

• Korean Journal of Materials Research
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• v.16 no.1
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• pp.19-24
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• 2006

ZnO:Al(AZO) films prepared by rf magnetron sputtering on glass substrate and textured by post-deposition chemical etching were applied as front contact and back reflectors for ${\mu}c$-Si:H thin film solar cells. For the front transparent electrode contact, AZO films were prepared at various working pressures and substrate temperature and then were chemically etched in diluted HCl(1%). The front AZO films deposited at low working pressure(1 mTorr) and low temperature ($240^{\circ}C$) exhibited uniform and high transmittance ($\geq$80%) and excellent electrical properties. The solar cells were optimized in terms of optical and electrical properties to demonstrate a high short-circuit current.

• Korean Journal of Materials Research
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• v.22 no.9
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• pp.450-453
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• 2012

In crystalline solar cells, the substrate itself constitutes a large portion of the fabrication cost as it is derived from semiconductor ingots grown in costly high temperature processes. Thinner wafer substrates allow some cost saving as more wafers can be sliced from a given ingot, although technological limitations in slicing or sawing of wafers off an ingot, as well as the physical strength of the sliced wafers, put a lower limit on the substrate thickness. Complementary to these economical and techno-physical points of view, a device operation point of view of the substrate thickness would be useful. With this in mind, BC-BJ Si and GaAs solar cells are compared one to one by means of the Medici device simulation, with a particular emphasis on the substrate thickness. Under ideal conditions of 0.6 ${\mu}m$ photons entering the 10 ${\mu}m$-wide BC-BJ solar cells at the normal incident angle (${\theta}=90^{\circ}$), GaAs is about 2.3 times more efficient than Si in terms of peak cell power output: 42.3 $mW{\cdot}cm^{-2}$ vs. 18.2 $mW{\cdot}cm^{-2}$. This strong performance of GaAs, though only under ideal conditions, gives a strong indication that this material could stand competitively against Si, despite its known high material and process costs. Within the limitation of the minority carrier recombination lifetime value of $5{\times}10^{-5}$ sec used in the device simulation, the solar cell power is known to be only weakly dependent on the substrate thickness, particularly under about 100 ${\mu}m$, for both Si and GaAs. Though the optimum substrate thickness is about 100 ${\mu}m$ or less, the reduction in the power output is less than 10% from the peak values even when the substrate thickness is increased to 190 ${\mu}m$. Thus, for crystalline Si and GaAs with a relatively long recombination lifetime, extra efforts to be spent on thinning the substrate should be weighed against the expected actual gain in the solar cell output power.