• 한국전기전자재료학회논문지
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• 제11권10호
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• pp.784-789
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• 1998

In this work, the optical properties of freestanding GaN single crystalline substrate grown by hydride vapor phase epitaxy(HVPE) were investigated. The low temperature PL spectrum in freestanding GaN consists of free and bound exciton emissions, and a deep DAP recombination around at 1.8eV. The optically-pumped stimulated emission in freestanding GaN substrate was observed at room temperature. At the maximum power density of 2MW/$\textrm{cm}^2$, the peak energy and FEHM of stimulated emission were 3.318 eV and 8meV, respectively. The excitation power dependence on the integrated emission intensity indicates the threshold pumping power density of 0.4 MW/$\textrm{cm}^2$.

• The Korean Journal of Ceramics
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• 제6권4호
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• pp.333-338
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• 2000

$Ba_{0.7}Sr_{0.3}TiO_3$(BST) thin films were deposited simultaneously on various electrodes and buffers by the sputtering technique. When the substrate temperature was varied, the BST thin film on each electrode showed good crystallinity above $550^{\circ}C$ as revealed by X-ray diffraction measurements. The surface morphology, determined by atomic force microscopy, indicated that the roughness of BST thin films on $RuO_2$was substrate dependent. However, BST thin films on Ru electrodes are smoother and showed no substrate dependence, probably because the precursor surface diffusion length was greater than the sinusoidal perturbations of the wavelength.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.125-126
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• 2006

ZnO Films have been prepared on polycarbonate (PC), polyethylene terephthalate (PET), and Coming 7059 substrates by r.f. magnetron sputtering technique. A comparison of the properties of the films deposited on polymer and glass substrates was performed. In addition, the effect of the sputter power on the structural and optical properties of these films was evaluated.

• Bulletin of the Korean Chemical Society
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• 제15권11호
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• pp.1001-1003
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• 1994

A series of phosphodiesters of p-nitrophenyl phosphoryl derivatives were synthesized and used as a model substrate for phospholipase D (PLD). The phosphodiester substrates were synthesized from p-nitrophenyl phosphorodichloridate and corresponding alcohols with different chain lengths and polar groups. To measure the activity of PLD, either spectroscopic method for p-nitrophenol or pH-stat titration method was employed. For each substrate, effects of substrate concentration, pH, and $Ca^{2+}$ ion were examined. The kinetic parameters $V_{max}$ for the different substrates were varied depending on the chain lengths or charge of the alcohols. No calcium effect was observed in the hydrolysis of neutral and negatively charged alcohol derivatives, while positively charged choline derivative showed a strong $Ca^{2+}$ ion dependence.

• 한국진공학회지
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• 제7권4호
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• pp.410-414
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• 1998

본 연구에서는 플라즈마 중합 반응의 기판 재질과 전극 위치에 대한 의존성을 규명 하기 위해서 Ar방전의 발광 분석을 행하였으며 제작된 박막의 가교성을 확인하기 위해서 전자빔 노광을 시켜보았다. 기판의 재질이 도체 및 절연체인 양자의 경우를 비교해 보면 전 자는 후자에 비해서 전체적으로 발광 스펙트럼의 피이크 강도가 크게 나타났으며, 준안정상 태에 대한 피이크와 이온에 대한 피이크를 검토한 결과, 기판이 절연물일 때는 전극의 위치 를 멀게 할수록 이온의 피이크 강도가 극단까지 떨어짐을 알 수 있었다. 제작된 중합스티렌 박막을 통하여 발광 스펙트럼의 변화에 따라서 막의 가교성 변화가 생기는 것을 알 수 있었 으며 이 막을 전자빔에 노광하였을 때, 기판이 절연물인 경우에는 패턴을 제작하는 것이 가 능하였다.

• 한국전기전자재료학회논문지
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• 제11권4호
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• pp.267-273
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• 1998

The band structures of $Si_{1-x}Ge_x$ layers grown on $Si_{1-y}Ge_y$ substrate are calculated using k$\cdot$p and strain Hamiltonians. The hole drift mobilities in the plane direction are then calculated by taking into account the screening effect and the density-of-states of the impurity band. When $Si_{1-x}Ge_x$ is grown on Si substrate, the mobilities of (110) and (111) $Si_{1-x}Ge_x$ layers are larger than that of (001) $Si_{1-x}Ge_x$. However, due to the large defect and surface scattering, (110) and (111) $Si_{1-x}Ge_x$ layers may not be useful for the development of the fast device. Meanwhile, when Si is grown on $Si_{1-y}Ge_y$ substrate, the mobilities of (001) and (110) Si layers are greatly enhanced. Based on the amount of defect and the surface scattering, it is expected that Si grown on (001) $Si_{1-y}Ge_y$ substrate, where the Ge contents is larger than 10%(y>0.1), has the highest mobility.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1998년도 제14회 학술발표회 논문개요집
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• pp.87-89
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• 1998

The Y2O3 films on Si(111) was grown by ionized cluster beam depposition (ICBD) in ultrahigh-vacuum (UHV). The acceleration voltage and oxygen ppartial ppressure were fixed at 5 kV and 2$\times$10-5 Torr resppectively. The substrate tempperature was varied from 10$0^{\circ}C$ to $600^{\circ}C$ in order to find the deppendence of crystallinity of Y2O3 films on the substrate tempperature. The crystallinity of the films with the substrate tempperature studied using x-ray diffraction (XRD) and Rutherford backscattering sppectroscoppy (RES). Surface crystallinity and surface morpphology of the films were also investigated using the reflection high-energy electron diffraction (RHEED) and atomic force microscoppe (AFM) resppectively. The films grown at the substrate tempperature below 50$0^{\circ}C$showed the ppoly-crystalline structure of oxygen deficiency. On the contrary the single-crystalline structure was obtained at the substrate tempperature over 50$0^{\circ}C$ and the stochimetry was gradually matched as increasing the substrate tempperature. The surface morpphology showed the increase of the surface roughness as the substrate tempperature was increased upp to 50$0^{\circ}C$ The crystallinity of the film was not good and the minimum channeling yield $\chi$min was measured at 0.91 The stochiometric and high crystallinine film (surface $\chi$min=0.25) was obtained as the substrate tempperature increased upp to 60 $0^{\circ}C$ which indicate the tempperature was sufficient to migrate the depposited atom.

• 한국정보통신학회논문지
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• 제17권9호
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• pp.2133-2138
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• 2013

다중게이트 구조인 나노 와이어 n-채널 무접합(junctionless) 및 반전모드(inversion mode) MuGFET에서 문턱전압 이하의 급격히 작은 기울기 (subthreshold slope)가 온도에 따라 변하는 것을 비교 분석하였다. 온도가 증가함에 따라 무접합 및 반전모드 소자의 문턱전압 아래 기울기는 증가하는 것으로 관측 되었다. 문턱전압 아래 기울기 증가는 반전모드 소자보다 무접합 소자에서 더 심함을 알 수 있었다. 소자의 핀 폭이 다른 소자의 문턱전압 아래 기울기의 온도 의존성은 비슷한 것으로 관측되었다. 그리고 기판 전압에 따른 문턱전압 아래 기울기의 온도 의존성 측정으로부터 기판전압이 증가함에 따라 문턱전압 아래 기울기 변화는 심하지 않는 것으로 관측되었다. 기판에 양의 전압을 인가하므로 무접합 MuGFET 소자를 이용하여 400K 온도에서도 문턱전압 아래 기울기가 41mV/dec 이하인 소자를 구현할 수 있었다.

• 전기의세계
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• 제23권2호
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• pp.55-61
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• 1974

Nature of magnetic creep phenomena in low coercive force films(Ni 80%-Fe 20%) in form of narrow channels imbedded in high coercive force films is studied in this work. Aluminium is evaporated on the hot glass substrate and eched free in the shape of narrow channels by photoetoetching method. then, Permalloy(Ni 80%, Fe 20%) is deposited on these Aluminium substrate under the uniform field of 30(Oe) to introduce anisotropy. Permalloy film on Al has a high coercive force and one on the substrate devoid of Al has how coercive force. Magnetic revers domain which is introduced at the end of channel grows under the a.c field in hard axis direction, in spite of very weak d.c field in easy axis direction. This creeping is investigated as a function of external fields and channel widths. Permalloy film thickness is 500.angs.-900.angs. and channel widths are 40, 51, 65, 81, 115.mu. respectively. Creeping increases as external field increases while it decreases with channel width decrease. Creep velocity in channels depends on the a.c field along hard axis, d.c field along easy axis and channel widths and its range is 1-10cm/sec in this experiment. From study of dependence of creep velocity on channel width, it can be concluded that creep velocity is expressed in form of v=v$_{0}$ exp .alpha.(H-H$_{0}$) where .alpha. is a function of a.c field along hard axis and H is driving d.c field along easy axis, H$_{0}$ is not a coercive force of film as usuall expected but the d.c threshold field along easy axis which is a function of channel width. This characteristic is also confirmed by the study of dependence of creep velocity upon easy axis field strength. Value of .alpha. obtained is 1.3-2.3cm/sec We depending upon film charactor, hard axis field strength and frequency.uency.

• 비파괴검사학회지
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• 제16권4호
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• pp.241-250
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• 1997

액체/고체 경계면에서 후방 복사된 초음파의 주파수 분석에 의해 Si layer/mesh Au/Si substrate 시편에 존재하는 표면 탄성파의 주파수 의존성이 측정되었다. 사용된 광역 탐촉자(2, 5, 10MHz)의 주파수에 따라 다르게 나타난 후방 복사의 입사각 의존성은 이 현상이 표면 지역에 발생된 표면파로부터의 에너지 복사에 의한 것임을 보여주었다. 후방 산란된 초음파의 입사각 의존성을 연속적으로 측정하기 위한 초음파 각도계가 제작되었고 다른 비율의 구리 분말이 섞인 에폭시에 의해 접착된 Ni layer/Al substrate 시편에 대해 후방복사 세기의 입사각 의존성이 측정되었다. (5MHz) 후방 복사의 폭과 패턴은 표면파 속도의 주파수 의존성, layer 접합의 질 그리고 표면 지역의 구조 등 여러 정보를 가지고 있음이 밝혀졌다.