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http://dx.doi.org/10.6109/jkiice.2013.17.9.2133

Steep subthreshold slope at elevated temperature in junctionless and inversion-mode MuGFET  

Lee, Seung-Min (Department of Electronics Engineering, Incheon National University)
Park, Jong-Tae (Department of Electronics Engineering, Incheon National University)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.17, no.9, 2013 , pp. 2133-2138 More about this Journal
Abstract
In this paper, the variation of a steep subthreshold slope at elevated temperature in nanowire n-channel junctionless and inversion mode MuGFETs has been compared. It has been observed that the subthreshold slopes are increased with the increase of the operation temperature in junctionless and inversio-mode transistors. The variation of a subthreshold slope with operation temperature is more significant in junctionless transistor than inversion-mode transistor. The temperature dependence on the variation of a subthreshold slope for different fin widths shows a similar behavior regardless of fin width. From the temperature dependence on the variation of a subthreshold slope for different substrate biases, it has been observed that the variation of a subthreshold slope is less significant when the substrate bias was applied. It is worth noting that one can achieve a subthreshold slope of below 41mV/dec at elevated temperature of 400K using the junctionless MuGFETs with a positive substrate bias.
Keywords
Junctionless MuGFET; Inversion mode MuGFET; subthreshold slope; impact ionization;
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